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Luo Yuan, Zhu Cong-Tan, Ma Shu-Peng, Zhu Liu, Guo Xue-Yi, Yang Ying. Low-temperature preparation of SnO2 electron transport layer for perovskite solar cells. Acta Physica Sinica,
2022, 71(11): 118801.
doi: 10.7498/aps.71.20211930
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Wang Jian, Chuai Rong-Yan. Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica,
2017, 66(24): 247201.
doi: 10.7498/aps.66.247201
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Chen Dan-Dan, Xu Fei, Cao Ru-Nan, Jiang Zui-Min, Ma Zhong-Quan, Yang Jie, Du Hui-Wei, Hong Feng. Near infrared broadband from Er-Tm codoped zinc oxide and temperature-dependent properties. Acta Physica Sinica,
2015, 64(4): 047104.
doi: 10.7498/aps.64.047104
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Zhang Yuan-Yuan, Lin Xin, Yang Hai-Ou, Li Jia-Qiang, Ren Yong-Ming. Influence of powdered state on crystallization during laser solid forming Zr55Cu30Al10Ni5 bulk metallic glasses. Acta Physica Sinica,
2015, 64(16): 166402.
doi: 10.7498/aps.64.166402
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Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang. Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica,
2012, 61(2): 028104.
doi: 10.7498/aps.61.028104
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Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming. Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica,
2012, 61(19): 198101.
doi: 10.7498/aps.61.198101
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica,
2011, 60(1): 017103.
doi: 10.7498/aps.60.017103
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Chao Yue-Sheng, Guo Hong, Gao Xiang-Yu, Luo Li-Ping, Zhu Han-Xian. Investigation on annealed Fe43Co43Hf7B6Cu1 amorphous alloy by positron annihilation spectroscopy. Acta Physica Sinica,
2011, 60(1): 017504.
doi: 10.7498/aps.60.017504
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong. Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica,
2010, 59(12): 8770-8775.
doi: 10.7498/aps.59.8770
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Yu Jun, Zhou Peng, Zhao Heng-Yu, Wu Feng, Xia Hai-Ping, Su Liang-Bi, Xu Jun. Study on near-infrared broadband emission spectroscopic properties of Bi-doped α-BaB2O4 single crystal induced by γ-irradiation. Acta Physica Sinica,
2010, 59(5): 3538-3541.
doi: 10.7498/aps.59.3538
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen. Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica,
2010, 59(4): 2775-2782.
doi: 10.7498/aps.59.2775
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Wei Wei, Liu Ming, Qu Sheng-Wei, Zhang Qing-Yu. Photoluminescence of as-grown and annealed ZnO films on Ti-buffered Si(111) substrates. Acta Physica Sinica,
2009, 58(8): 5736-5743.
doi: 10.7498/aps.58.5736
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Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen. Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica,
2009, 58(9): 6560-6565.
doi: 10.7498/aps.58.6560
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong. Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica,
2006, 55(5): 2523-2528.
doi: 10.7498/aps.55.2523
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Zhao Shu-Yun, Wu Chun-Ya, Liu Zhao-Jun, Li Xue-Dong, Wang Zhong, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang. Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source. Acta Physica Sinica,
2006, 55(11): 6095-6100.
doi: 10.7498/aps.55.6095
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Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying. The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica,
2005, 54(8): 3805-3809.
doi: 10.7498/aps.54.3805
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Yao Ruo-He, Huang Wen-Yong, Wei Jun-Hong, Wang Zhao-Kui, Yu Chu-Ying. Control of grain size during low-temperature growth of polycrystalline silicon films. Acta Physica Sinica,
2004, 53(11): 3950-3955.
doi: 10.7498/aps.53.3950
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Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang. Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica,
2004, 53(2): 582-586.
doi: 10.7498/aps.53.582
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Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Qin. Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica,
2003, 52(11): 2934-2938.
doi: 10.7498/aps.52.2934
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HE DE-YAN. CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS. Acta Physica Sinica,
2001, 50(4): 779-783.
doi: 10.7498/aps.50.779
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