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用提拉法技术生长出了掺Bi的α-BaB2O4单晶并经过γ射线辐照.测定了样品在室温下的吸收光谱、发射光谱及荧光衰减曲线.在808 nm波长光的激发下，经γ射线辐照后的α-BaB2O4单晶中发现了中心波长为1139 nm、半高宽为113 nm的近红外宽带发光现象.讨论了辐照条件和退火处理对Bi离子发光的影响.对于其发光机理进行了初步的探讨.
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关键词:
- 近红外宽带发光 /
- α-BaB2O4单晶 /
- 辐照 /
- 退火处理
The bismuth-doped α-BBO single crystals were prepared by traditional Czochralski method in ambient atmosphere, and the obtained samples were irradiated by γ-ray . The absorption, emission and fluorescence decay curves were measured at room temperature. Near-infrared super-broadband emission (FWHM ~113 nm) of Bi:α-BBO single crystal subjected to γ-irradiation was observed to be center-peaked at ~1139 nm upon 808 nm excitation. The effect of irradiation and annealing treatment on the emission was discussed, and the mechanism for the wide emission band was investigated preliminarily.-
Keywords:
- near infrared super-broadband emission /
- α-BaB2O4 single crystal /
- irradiation /
- annealing treatment
[1] ［1］Ogoshi H, Ichino S, Kurotori K 2000 J .Furukawa. Rev. 20 17
[2] ［2］Xu T F, Zhang X D, Nie Q H 2006 J. Chin. Rare Earth. Soc. 24 544(in Chinese) ［徐铁峰、张旭东、聂秋华 2006中国稀土学报 24 544］
[3] ［3］Yang J H, Dai S X, Wen L,Liu Z P, Hu L L, Jiang Z H 2003 Acta Phys. Sin. 52 514(in Chinese) ［杨建虎、戴世勋、温磊、柳祝平、胡丽丽、姜中宏 2003 52 514］
[4] ［4］Chen B Y, Lin Y H, Chen D D,Jiang Z H 2005 Acta Phys. Sin. 54 2374 (in Chinese) ［陈炳炎、刘粤惠、陈东丹、姜中宏 2005 54 2374］
[5] ［5］Fujimoto Y, Nakatsuka M 2001 Jpn.J.Appl. Phys. 40 L279
[6] ［6］Fujimoto Y, Nakatsuka M 2003 App1.Phys.Lett. 82 3325
[7] ［7］Peng M Y,Qiu J R,Chen D P 2004 Opt.Lett. 29 1998
[8] ［8］Wang X J, Xia H P 2006 Acta Phys. Sin. 55 5263 (in Chinese) ［王雪俊、夏海平 2006 55 5263］
[9] ［9］Yang B X, Hou B H, Liang Y Z, Shi C S 1996 Journal of China University of Science And Technology 26 498 （in Chinese）［杨炳忻、侯碧辉、粱任又、施朝淑 1996 中国科技大学学报 26 498］
[10] ］Li M H, Sun S W,Teng Y J, Xu Y H 1997 Piezoelectrics & Acoustooptics 19 201 （in Chinese）［李铭华、孙尚文、滕玉洁、徐玉恒 1997 压电与声电 19 201］
[11] ］Zhou G Q, Xu J, Chen X D 1998 J. Crystal Growth. 191 517
[12] ］Srivastava A M 1998 J. Lumin. 78 239
[13] ］ Blasse G, Meijerink A, Nomes M, Zuidema J 1994 J. Phys. Chem. Solids 55 171
[14] ］Novoselov A, Yoshikawa A, Nikl M, Pejchal J, Fukuda T 2006 J.Cryst. Growth 292 236
[15] ］Blasse G, Bril A 1968 J. Chem. Phys. 48 217
[16] ］Srivastava A M 1998 J. Lumin. 78 239
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[1] ［1］Ogoshi H, Ichino S, Kurotori K 2000 J .Furukawa. Rev. 20 17
[2] ［2］Xu T F, Zhang X D, Nie Q H 2006 J. Chin. Rare Earth. Soc. 24 544(in Chinese) ［徐铁峰、张旭东、聂秋华 2006中国稀土学报 24 544］
[3] ［3］Yang J H, Dai S X, Wen L,Liu Z P, Hu L L, Jiang Z H 2003 Acta Phys. Sin. 52 514(in Chinese) ［杨建虎、戴世勋、温磊、柳祝平、胡丽丽、姜中宏 2003 52 514］
[4] ［4］Chen B Y, Lin Y H, Chen D D,Jiang Z H 2005 Acta Phys. Sin. 54 2374 (in Chinese) ［陈炳炎、刘粤惠、陈东丹、姜中宏 2005 54 2374］
[5] ［5］Fujimoto Y, Nakatsuka M 2001 Jpn.J.Appl. Phys. 40 L279
[6] ［6］Fujimoto Y, Nakatsuka M 2003 App1.Phys.Lett. 82 3325
[7] ［7］Peng M Y,Qiu J R,Chen D P 2004 Opt.Lett. 29 1998
[8] ［8］Wang X J, Xia H P 2006 Acta Phys. Sin. 55 5263 (in Chinese) ［王雪俊、夏海平 2006 55 5263］
[9] ［9］Yang B X, Hou B H, Liang Y Z, Shi C S 1996 Journal of China University of Science And Technology 26 498 （in Chinese）［杨炳忻、侯碧辉、粱任又、施朝淑 1996 中国科技大学学报 26 498］
[10] ］Li M H, Sun S W,Teng Y J, Xu Y H 1997 Piezoelectrics & Acoustooptics 19 201 （in Chinese）［李铭华、孙尚文、滕玉洁、徐玉恒 1997 压电与声电 19 201］
[11] ］Zhou G Q, Xu J, Chen X D 1998 J. Crystal Growth. 191 517
[12] ］Srivastava A M 1998 J. Lumin. 78 239
[13] ］ Blasse G, Meijerink A, Nomes M, Zuidema J 1994 J. Phys. Chem. Solids 55 171
[14] ］Novoselov A, Yoshikawa A, Nikl M, Pejchal J, Fukuda T 2006 J.Cryst. Growth 292 236
[15] ］Blasse G, Bril A 1968 J. Chem. Phys. 48 217
[16] ］Srivastava A M 1998 J. Lumin. 78 239
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