铒铥共掺氧化锌薄膜近红外宽带发射及变温行为的研究

陈丹丹; 徐飞; 曹汝楠; 蒋最敏; 马忠权; 杨洁; 杜汇伟; 洪峰

doi:10.7498/aps.64.047104

摘要

采用磁控共溅射技术制备了铒铥共掺杂氧化锌发光薄膜. 通过优化退火温度, 实现了薄膜的近红外平坦宽带发射, 总带宽可达到~ 500 nm, 覆盖了光通信S+C+L+U 区波段. 此发射带由Er3+ 的1535 nm (4I13/2 → 4I15/2) 发射峰及Tm3+ 的1460 nm (3H4 → 3F4), 1640 nm (1G4 → 3F2), 1740 nm (3F4 → 3H6) 发射峰组成. 研究表明: 退火温度低于800 ℃ 时, 没有观察到薄膜样品明显的光致发光现象; 随着退火温度从800 ℃ 升高到1000 ℃, I1640/I1535 发射峰强度比从0.2 升高到0.3, I1740/I1535 发射峰强度比从0.5 降低到0.4, 发射峰强度比均基本保持稳定; 当退火温度高于1000 ℃ 时, I1640/I1535 发射峰强度比从0.3 升高到 0.6, I1740/I1535 发射峰强度比从0.4 升高到0.8, 发射峰强度比均急剧增加. 变温行为表明: 随着温度从10 K 逐渐升高到300 K, 谱线的总带宽基本不变, 在340—360 nm 之间; Tm3+ 在1640 和1740 nm 处的发射峰强度分别降低了2/3 和1/2, Er3+ 在1535 nm 的发射峰强度增大了1.2 倍. 这是因为随着温度的升高, 声子数目增多, Er3+ 与Tm3+ 离子之间发生能量传递的概率不断变大, 并且在Tm3+ 离子之间没有发生交叉弛豫现象.

关键词:

Abstract

Er-Tm codoped ZnO thin film is synthesized by co-sputtering from separated Er, Tm, and ZnO targets. A flat and broad emission band is achieved in a range of 1400-2100 nm by optimizing annealing temperature, and the observed 1460, 1540, 1640 and 1740 nm emission bands are attributed to the transitions of Tm3+: 3H4 →3F4, Er3+ 4I13/2 →4I15/2, Tm3+ 1G4 → 3F2 and Tm3+ 3F4 → 3H6 transitions, respectively, which cover S, C, L, U bands. The intensity ratios of 1640 to 1535 nm and 1740 to 1535 nm below 1000 ℃ are nearly constant, while the ratios increase sharply above 1000 ℃. The temperature dependence of photoluminescence (PL) spectrum is studied under 10-300 K. With increasing the operation temperature, the bandwidth of broadband is nearly invariable (340-360 nm), and the Tm3+ PL emission intensities of 1640 nm and 1740 nm from Er-Tm co-doped ZnO thin film decrease by a factor of 1.5 and 2, respectively. Moreover, the 1535 nm emission intensity is increased by a factor of 1.2. This phenomenon is attributed to the complicated energy transfer (ET) processes involving both Er3+ and Tm3+ and the increase of phonon-assisted ET rate with temperature as well. And the cross relaxation between Tm3+ ions does not occur.

Keywords:

作者及机构信息

1.
上海大学理学院物理系, 索朗光伏材料与器件R&D联合实验室, 分析测试中心, 上海 200444;

2.
复旦大学, 应用表面物理国家重点实验室, 微纳光子结构教育部重点实验室, 先进材料实验室, 上海 200433

基金项目: 国家自然科学基金(批准号: 50602029, 61274067, 60876045)、上海市基础研究重点项目(批准号: 09JC1405900) 和上海大学课程建设项目(批准号: B.08-0101-14-111)资助的课题.

Authors and contacts

1.
SHU-SolarE R&D Lab, Department of Physics, College of Sciences, Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, China;

2.
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structure (Ministry of Education), Advanced Materials Laboratory, Fudan University, Shanghai 200433, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50602029, 61274067, 60876045), the Shanghai Leading Basic Research Project of China (Grant No. 09JC1405900), and the Curriculum Construction Project of Shanghai University, China (Grant No. B.08-0101-14-111).

参考文献

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施引文献

[1]	Zhao G Y, Tian Y, Wang X, Fan H Y, Hu L L 2013 J. Lumin. 134 837
[2]	Wang Y Z, Yu D C, Lin H H, Ye S, Peng M Y, Zhang Q Y 2013 J. Appl. Phys. 114 203510
[3]	Neuvonen P T, Sigvardt K, Johannsen S R, Chevallier J, Julsgaard B, Ram S K, Larsen A N 2014 Appl. Phys. Lett. 104 102106
[4]	Ding W C, Liu Y, Zhang Y, Guo J C, Zuo Yu H, Cheng B W, Yu J Z, Wang Q M 2009 Chin. Phys. B 18 3044
[5]	Duan S Q, Tan N, Zhang Q Y 2005 Chin. Phys. 14 0615
[6]	Rivera V A G, El-Amraoui M, Ledemi Y, Messaddeq Y, Marega Jr E 2014 J. Lumin. 145 787
[7]	Xiao Z S, Serna R, Afonso C N 2007 J. Appl. Phys. 101 033112
[8]	Komukai T, Yamamoto T, Sugawa T, Miyajima Y 1995 IEEE J. Quantum Electron. 31 1880
[9]	Pavani K, Moorthy L R, Kumar J S, Babu A M 2013 J. Lumin. 136 383
[10]	Liu H Y, Zeng F, Lin Y L, Wang G Y, Pan F 2013 Appl. Phys. Lett. 102 181908
[11]	Youn C J, Jeong T S, Han M S, Kim J H 2004 J. Cryst. Growth 261 526
[12]	Li M Z, Lu F, Xu F, Jiang Z M, Wang X, Lou H N, Ma Z Q, Zheng L L 2012 Mater. Chem. Phys. 137 270
[13]	Seo S Y, Kim K J, Shin J H 2010 Thin Solid Films 518 7012
[14]	Pu Y, Xu F, Jiang Z M, Ma Z Q, Lu F, Chen D D 2012 Appl. Phys. Lett. 101 191903
[15]	Xiao Z S, Zhou B, Xu F, Zhu F, Yan L, Zhang F, Huang A P 2009 Phys. Lett. A 373 890
[16]	van den Hoven G N, Snoeks E, Polman A, van Uffelen J W M, Oei Y S, Smith M K 1993 Appl. Phys. Lett. 62 3065
[17]	Xu F, Zheng L L, Li M Z, Lu F, Ma Z Q, Jiang Z M, Zhou P H, Shi J W, Pu Y 2012 Appl. Opt. 51 1115
[18]	Liu Q L, Yu G H, Jiang Y 2009 Chin. Phys. B 18 1266
[19]	Chun J 2009 Adv. OptoElectron. 2009 278105
[20]	Wang X S, Nie Q H, Xu T F, Shen X, Dai S X, Gai N, Zhou Y 2009 Spectrochim. Acta A 72 543
[21]	Richards B, Shen S X, Jha A, Tsang Y, Binks D 2007 Opt. Express 15 6546
[22]	Lakshminarayana G, Yang R, Mao M F, Qiu J R 2009 Opt. Mater. 31 1506
[23]	Xu F, Serna R, Jimenez de Castro M, Fernandez Navarro J M, Xiao Z 2010 Appl. Phys. B 99 263
[24]	Miyakawa T, Dexter D L 1970 Phys. Rev. B 1 2961

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