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In order to shorten processing time for large grain polycrystalline Si thin films prepared by aluminum induced crystallization, the stack of a-Si/SiO2/Al is deposited by radio frequency magnetron sputtering and annealed at two different irregular temperature profiles. The influence of irregular temperature profile on the processing of amorphous silicon prepared by the aluminum induced crystallization is investigated and the condition is discussed under which whether new nucleation appears when the annealing temperature increases. It turns out that the formation of nucleation is governed by the relationship among the grain radium at low temperature, the distance of depletion region, and the distance of adjacent grains.
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Keywords:
- thin film /
- polycrystalline silicon /
- aluminum induced crystallization /
- temperature profile annealing
[1] Widenborg P I, Aberle A G 2002 J. Cryst. Growth 242 270
[2] Gordon I, Carnel L, Gestel D V, Beaucarne G, Poortmans J 2008 Thin Solid Films 516 6984
[3] Zhao S Y, Wu C Y, Liu Z J, Li X D, Wang Z, Meng Z G, Xiong S Z, Zhang F 2006 Acta Phys. Sin. 55 6095 (in Chinese) [赵淑云、吴春亚、刘召军、李学冬、王 中、孟志国、熊绍珍、张 芳 2006 55 6095]
[4] Luo C, Meng Z G, Wang S, Xiong S Z 2009 Acta Phys. Sin. 58 6560 (in Chinese) [罗 冲、孟志国、王 烁、熊绍珍 2009 58 6560]
[5] Nast O, Wenham S R 2000 J. Appl. Phys. 88 124
[6] Sarikov A, Schneider J, Muske M, Gall S, Fuhs W 2006 J. Non-Cryst. Solids 352 980
[7] Schneider J, Schneider A, Sarikov A, Klein J, Muske M, Gall S, Fuhs W 2006 J. Non-Cryst. Solids 352 972
[8] Schneider J, Heimburger R, Klein J, Muske M, Gall S, Fuhs W 2005 Thin Solid Films 487 107
[9] Fuhs W, Gall S, Rau B, Schmidt M, Schneider J 2004 Solar Energy 77 961
[10] Pihan E, Focsa A, Slaoui A, Maurice C 2006 Thin Solid Films 511—512 15
[11] Tang Z X, Shen H L , Lu L F, Jiang F, Guo Y, Shen J C 2009 J. Optoelectron. Adv. Mater. 11 1077
[12] Zener C 1949 J. Appl. Phys. 20 95
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[1] Widenborg P I, Aberle A G 2002 J. Cryst. Growth 242 270
[2] Gordon I, Carnel L, Gestel D V, Beaucarne G, Poortmans J 2008 Thin Solid Films 516 6984
[3] Zhao S Y, Wu C Y, Liu Z J, Li X D, Wang Z, Meng Z G, Xiong S Z, Zhang F 2006 Acta Phys. Sin. 55 6095 (in Chinese) [赵淑云、吴春亚、刘召军、李学冬、王 中、孟志国、熊绍珍、张 芳 2006 55 6095]
[4] Luo C, Meng Z G, Wang S, Xiong S Z 2009 Acta Phys. Sin. 58 6560 (in Chinese) [罗 冲、孟志国、王 烁、熊绍珍 2009 58 6560]
[5] Nast O, Wenham S R 2000 J. Appl. Phys. 88 124
[6] Sarikov A, Schneider J, Muske M, Gall S, Fuhs W 2006 J. Non-Cryst. Solids 352 980
[7] Schneider J, Schneider A, Sarikov A, Klein J, Muske M, Gall S, Fuhs W 2006 J. Non-Cryst. Solids 352 972
[8] Schneider J, Heimburger R, Klein J, Muske M, Gall S, Fuhs W 2005 Thin Solid Films 487 107
[9] Fuhs W, Gall S, Rau B, Schmidt M, Schneider J 2004 Solar Energy 77 961
[10] Pihan E, Focsa A, Slaoui A, Maurice C 2006 Thin Solid Films 511—512 15
[11] Tang Z X, Shen H L , Lu L F, Jiang F, Guo Y, Shen J C 2009 J. Optoelectron. Adv. Mater. 11 1077
[12] Zener C 1949 J. Appl. Phys. 20 95
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