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Jiang Zhou, Jiang Xue, Zhao Ji-Jun. Electronic properties of two-dimensional kagome lattice based on transition metal phthalocyanine heterojunctions. Acta Physica Sinica,
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Bai Liang, Zhao Qi-Xu, Shen Jian-Wei, Yang Yan, Yuan Qing-Hong, Zhong Cheng, Sun Hai-Tao, Sun Zhen-Rong. Computational screening of photocathodes based on layered MXene coated Cs3Sb heterostructures. Acta Physica Sinica,
2021, 70(21): 218504.
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2021, 70(2): 027901.
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2020, 69(18): 188102.
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Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica,
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2019, 68(16): 166801.
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Li Qun, Chen Qian, Chong Jing. Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica,
2018, 67(2): 027303.
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2014, 63(8): 080202.
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Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou. Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica,
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2012, 61(22): 227302.
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Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica,
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica,
2011, 60(4): 047101.
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Li Yan-Wu, Liu Peng-Yi, Hou Lin-Tao, Wu Bing. Heterojunction organic solar cells with Rubrene as electron transporting layer. Acta Physica Sinica,
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao. Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica,
2008, 57(4): 2481-2485.
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Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica,
2007, 56(5): 2895-2899.
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Fan Long, Hao Yue. The effect of radiation induced strain relaxation on electric performance of AlmGa1－mN/GaN HEMT. Acta Physica Sinica,
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2007, 56(7): 4143-4147.
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Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi. Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica,
2004, 53(7): 2320-2324.
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Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures. Acta Physica Sinica,
2003, 52(7): 1756-1760.
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