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Zheng Peng-Fei, Liu Zhi-Xu, Wang Chao, Liu Wei-Fang. First principles study on polarization and piezoelectric properties of group substitution regulated lead-free organic perovskite ferroelectrics. Acta Physica Sinica,
2024, 73(12): 126202.
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Zhou Zhan-Hui, Li Qun, He Xiao-Min. Electron transport mechanism in AlN/β-Ga2O3 heterostructures. Acta Physica Sinica,
2023, 72(2): 028501.
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Ran Feng, Liang Yan, Jiandi Zhang. Quasi-two-dimensional superconductivity at oxide heterostructures. Acta Physica Sinica,
2023, 72(9): 097401.
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Zhao Li-Li, Wu Meng-Meng, Lin Wen-Lu, Liu Yang. Contactless transport method of two-dimensional electron system studies. Acta Physica Sinica,
2022, 71(12): 127303.
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2020, 69(15): 157303.
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Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen. Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica,
2019, 68(16): 166801.
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Li Qun, Chen Qian, Chong Jing. Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica,
2018, 67(2): 027303.
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Wu Kong-Ping, Qi Jian, Peng Bo, Tang Kun, Ye Jian-Dong, Zhu Shun-Ming, Gu Shu-Lin. Polarization properties of wurtzite structure Zn1-xMgxO and band offset at Zn0.75Mg0.25O/ZnO interfaces: A GGA+U investigation. Acta Physica Sinica,
2015, 64(18): 187304.
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Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong. Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica,
2014, 63(8): 080202.
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Li Jia-Dong, Cheng Jun-Jie, Miao Bin, Wei Xiao-Wei, Zhang Zhi-Qiang, Li Hai-Wen, Wu Dong-Min. Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors. Acta Physica Sinica,
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Niu Hai-Bo, Chen Guang-De, Wu Ye-Long, Ye Hong-Gang. Influence of vacancy on spontaneous polarization of wurtzite AlN： a maximally localized Wannierfunction study. Acta Physica Sinica,
2014, 63(16): 167701.
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
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Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou. Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica,
2013, 62(15): 150202.
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Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao. Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica,
2012, 61(23): 237302.
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Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei. Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica,
2012, 61(21): 217302.
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Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117305.
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Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117304.
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2007, 56(10): 6013-6018.
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Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Guo Shao-Ling, Chu Jun-Hao, Lü Jie, Tang Ning, Shen Bo, Zhang Fu-Jia. The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas. Acta Physica Sinica,
2006, 55(5): 2498-2503.
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Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures. Acta Physica Sinica,
2003, 52(7): 1756-1760.
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