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中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083
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[1] Dong Dian-Meng, Wang Cheng, Zhang Qing-Yi, Zhang Tao, Yang Yong-Tao, Xia Han-Chi, Wang Yue-Hui, Wu Zhen-Ping. Ga2O3-based metal-insulator-semiconductor solar-blind ultraviolet photodetector with HfO2 inserting layer. Acta Physica Sinica, 2023, 72(9): 097302. doi: 10.7498/aps.72.20222222 [2] Li Geng-Lin, Jia Yue-Chen, Chen Feng. Research progress of photonics devices on lithium-niobate-on-insulator thin films. Acta Physica Sinica, 2020, 69(15): 157801. doi: 10.7498/aps.69.20200302 [3] Wang Ze-Lin, Zhang Zhen-Hua, Zhao Zhe, Shao Rui-Wen, Sui Man-Ling. Mechanism of electrically driven metal-insulator phase transition in vanadium dioxide nanowires. Acta Physica Sinica, 2018, 67(17): 177201. doi: 10.7498/aps.67.20180835 [4] Peng Chao1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun. Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2018, 67(21): 216102. doi: 10.7498/aps.67.20181372 [5] Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan. Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. Acta Physica Sinica, 2016, 65(9): 096104. doi: 10.7498/aps.65.096104 [6] Luo Ming-Hai, Xu Ma-Ji, Huang Qi-Wei, Li Pai, He Yun-Bin. Research progress of metal-insulator phase transition mechanism in VO2. Acta Physica Sinica, 2016, 65(4): 047201. doi: 10.7498/aps.65.047201 [7] Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng. Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica, 2015, 64(8): 086101. doi: 10.7498/aps.64.086101 [8] Zhao Xing, Mei Bo, Bi Jin-Shun, Zheng Zhong-Shan, Gao Lin-Chun, Zeng Chuan-Bin, Luo Jia-Jun, Yu Fang, Han Zheng-Sheng. Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuit. Acta Physica Sinica, 2015, 64(13): 136102. doi: 10.7498/aps.64.136102 [9] Zhao Xiao-Long, Kang Xue, Chen Liang, Zhang Zhong-Bing, Liu Jin-Liang, Ouyang Xiao-ping, Peng Wen-Bo, He Yong-Ning. Study of ZnO photoconductive X-ray detector. Acta Physica Sinica, 2014, 63(9): 098502. doi: 10.7498/aps.63.098502 [10] Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 237304. doi: 10.7498/aps.63.237304 [11] Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong. A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plate. Acta Physica Sinica, 2014, 63(10): 107302. doi: 10.7498/aps.63.107302 [12] Lü Hou-Xiang, Shi De-Zheng, Xie Zheng-Wei. Relations between traversal time in ferromagnetic/semiconductor(insulator)/ferromagnetic heterojunction and the relative magnetic moment angle in two ferromagnetic layers. Acta Physica Sinica, 2013, 62(20): 208502. doi: 10.7498/aps.62.208502 [13] Hong Xia, Guo Xiong-Bin, Fang Xu, Li Kan, Ye Hui. Design of silicon based germanium metal-semiconductor-metal photodetector enhanced by surface plasmon resonance. Acta Physica Sinica, 2013, 62(17): 178502. doi: 10.7498/aps.62.178502 [14] Jiang Tian, Cheng Xiang-Ai, Jiang Hou-Man, Lu Qi-Sheng. Investigation of the response mechanism of photovoltaic semiconductor with sub-bandgap photons. Acta Physica Sinica, 2011, 60(10): 107305. doi: 10.7498/aps.60.107305 [15] Wang Chang-Lei, Tian Zhen, Xing Qi-Rong, Gu Jian-Qiang, Liu Feng, Hu Ming-Lie, Chai Lu, Wang Qing-Yue. Photo-induced insulator-metal transition of silicon-based VO2 nanofilm by THz time domain spectroscopy. Acta Physica Sinica, 2010, 59(11): 7857-7862. doi: 10.7498/aps.59.7857 [16] Zhang Da-Cheng, Shen Yan-Yan, Huang Yuan-Jie, Wang Zhuo, Liu Chang-Long. Theoretical study of nanoparticles in insulators fabricated by metal ion implantation. Acta Physica Sinica, 2010, 59(11): 7974-7978. doi: 10.7498/aps.59.7974 [17] Ma Jian-Hua, Sun Jing-Lan, Meng Xiang-Jian, Lin Tie, Shi Fu-Wen, Chu Jun-Hao. Dielectric and interface characteristics of SrTiO3 with a MIS structure. Acta Physica Sinica, 2005, 54(3): 1390-1395. doi: 10.7498/aps.54.1390 [18] . . Acta Physica Sinica, 2000, 49(2): 365-370. doi: 10.7498/aps.49.365 [19] WANG MAO-XIANG, YU JIAN-HUA, SUN CHENG-XIU, WU ZONG-HAN. NEGATIVE RESISTANCE PHENOMENON AND LIGHT EMISSION PROPERTY OF THE METAL-INSULATOR-SEMICONDUCTOR (Au-SiO2-Si) TUNNEL JUNCTION. Acta Physica Sinica, 2000, 49(6): 1159-1162. doi: 10.7498/aps.49.1159 [20] CHHN FENG, YING HE-PING, XU TIE-FENG, LI WEN-ZHU. INSULATOR-METAL TRANSITION OF THE 2-D HALF-FILLED HUBBARD MODEL AT FINITE-TEMPERATURES. Acta Physica Sinica, 1994, 43(10): 1672-1676. doi: 10.7498/aps.43.1672
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- Received Date:
19 May 1994
- Published Online:
20 July 1995
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