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To reduce the on-resistance and enhance the breakdown voltage of silicon on insulator (SOI) lateral double diffused metal oxide semiconductor (LDMOS) device at the same time, a low on-resistance SOI-LDMOS device with a vertical drain field plate and trench gate and trench drain (VFP-TGTD-SOI-LDMOS) is proposed. The device has the features as follows: first, a trench gate and a trench drain are adopted, which can widen the vertical current conduction area, shorten the lateral current conduction path, and lower the on-resistance. Secondly, a vertical field plate is used, which modulates the electric field around it, reduces the high electric field at the end of the drain electrode, and increases the breakdown voltage. The VFP-TGTD-SOI device is compared with a conventional SOI device, a trench gate SOI device, a trench gate and trench drain SOI device with the same dimensional device parameters using the two-dimensional semiconductor simulator MEDICI. The results show that under the condition of their own highest figure of merit (FOM), the specific on-resistance value of the VFP-TGTD-SOI device is reduced by 53%, 23%, and increased by 87%, respectively and the breakdown voltage is increased by 4% and reduced by 9% and increased by 45%, respectively. By comparing the FOMs of the four structures, it can be seen that the VFP-TGTD-SOI device has the highest FOM, which indicates that among the four structures, it maintains the lower on-resistance and holds the higher breakdown voltage at the same time.
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Keywords:
- trench gate /
- trench drain /
- low on-resistance /
- breakdown voltage
[1] Tan Y, Cai J, Sin Johnny K O 2001 IEEE Trans. Electron Dev. 48 2428
[2] Bi J S, Hai C H, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 60 018501]
[3] Wang Y G, Luo X R, Ge R, Wu L J, Chen X, Yao G L, Lei T F, Wang Q, Fan J, Hu X R 2011 Chin. Phys. B 20 077304
[4] Luo X R, Zhang B, Li Z J, Guo Y F, Tang X W, Liu Y 2007 IEEE Electron Dev. Lett. 28 422
[5] Li Q, Zhang B, Li Z J 2008 Acta Phys. Sin. 57 6565 (in Chinese) [李琦, 张波, 李肇基 2008 57 6565]
[6] Wu L J, Hu S D, Zhang B, Luo X R, Li Z J 2011 Chin. Phys. B 20 087101
[7] Wu L J, Zhang W T, Zhang B, Li Z J 2013 J. Semicond. 34 044008
[8] Hu C 1979 IEEE Trans. Electron Dev. 26 243
[9] Kawaguchi Y, Sano T, Nakagawa A 1999 IEEE International Electron Devices Meeting Washington DC, USA, December 5-8, 1999 p197
[10] Erlbacher T, Bauer A J, Frey L 2010 IEEE Electron Dev. Lett. 31 464
[11] Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X, Wei J 2012 Chin. Phys. B 21 068501
[12] Yue L, Zhang B, Li Z J 2012 IEEE Electron Dev. Lett. 33 1174
[13] Luo X R, Lei T F, Wang Y G, Yao G L, Jiang Y H, Zhou K, Wang P, Zhang Z Y 2012 IEEE Trans. Electron Dev. 59 504
[14] Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B, Udrea F 2011 IEEE Electron Dev. Lett. 32 185
[15] Baba Y, Yanagiya S, Koshino Y, Udo Y 1994 Proceedings of the 6th International Power Semiconductor Devices and ICs Davos, Switzerland, May 31-June 2, 1994 p183
[16] Kim S L, Yang H Y, Choi Y I 2000 Proceedings of the 22nd International Conference on Microelectronics Nis, Serbia, May 14-17, 2000 p641
[17] Ge R, Luo X R, Jiang Y H, Zhou K, Wang P, Wang Q, Wang Y G, Zhang B, Li Z J 2012 J. Semicond. 33 074005
[18] Zhang H P, Jiang L F, Sun L L, Li W J, Zhou L, Hua B X, Xu L Y, Lin M 2007 International Symposium on Communications and Information Technologies Sydney, Australia, October 17-19, 2007 p34
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[1] Tan Y, Cai J, Sin Johnny K O 2001 IEEE Trans. Electron Dev. 48 2428
[2] Bi J S, Hai C H, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 60 018501]
[3] Wang Y G, Luo X R, Ge R, Wu L J, Chen X, Yao G L, Lei T F, Wang Q, Fan J, Hu X R 2011 Chin. Phys. B 20 077304
[4] Luo X R, Zhang B, Li Z J, Guo Y F, Tang X W, Liu Y 2007 IEEE Electron Dev. Lett. 28 422
[5] Li Q, Zhang B, Li Z J 2008 Acta Phys. Sin. 57 6565 (in Chinese) [李琦, 张波, 李肇基 2008 57 6565]
[6] Wu L J, Hu S D, Zhang B, Luo X R, Li Z J 2011 Chin. Phys. B 20 087101
[7] Wu L J, Zhang W T, Zhang B, Li Z J 2013 J. Semicond. 34 044008
[8] Hu C 1979 IEEE Trans. Electron Dev. 26 243
[9] Kawaguchi Y, Sano T, Nakagawa A 1999 IEEE International Electron Devices Meeting Washington DC, USA, December 5-8, 1999 p197
[10] Erlbacher T, Bauer A J, Frey L 2010 IEEE Electron Dev. Lett. 31 464
[11] Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X, Wei J 2012 Chin. Phys. B 21 068501
[12] Yue L, Zhang B, Li Z J 2012 IEEE Electron Dev. Lett. 33 1174
[13] Luo X R, Lei T F, Wang Y G, Yao G L, Jiang Y H, Zhou K, Wang P, Zhang Z Y 2012 IEEE Trans. Electron Dev. 59 504
[14] Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B, Udrea F 2011 IEEE Electron Dev. Lett. 32 185
[15] Baba Y, Yanagiya S, Koshino Y, Udo Y 1994 Proceedings of the 6th International Power Semiconductor Devices and ICs Davos, Switzerland, May 31-June 2, 1994 p183
[16] Kim S L, Yang H Y, Choi Y I 2000 Proceedings of the 22nd International Conference on Microelectronics Nis, Serbia, May 14-17, 2000 p641
[17] Ge R, Luo X R, Jiang Y H, Zhou K, Wang P, Wang Q, Wang Y G, Zhang B, Li Z J 2012 J. Semicond. 33 074005
[18] Zhang H P, Jiang L F, Sun L L, Li W J, Zhou L, Hua B X, Xu L Y, Lin M 2007 International Symposium on Communications and Information Technologies Sydney, Australia, October 17-19, 2007 p34
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