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Single event transients (SETs) in a 100 series 0.18 m partially- depleted silicon-on-insulator (PDSOI) complementary metal oxide semiconductor (CMOS) inverter chain are studied by using pulsed laser. In this paper, effects of struck transistor type and struck locations on the threshold laser energy and the pulse width of SETs are investigated. Results show that the threshold laser energies at different locations are similar, but the threshold laser energies of n-channel metal-oxide-semiconductor (NMOS) transistors are much smaller than that of p-channel metal-oxide-semiconductor (PMOS) transistors. The SET pulse width of n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) is 427.5 ps as measured at the output terminal when the 2nd stage is irradiated, and 287.4 ps when the 100th stage is irradiated; the SET pulse width of p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is 295.9 ps as measured at the output terminal when the 1st stage is irradiated, and 150.5 ps when the 99th stage is irradiated. Both broadening rates are about 1.4 ps/stage. When the struck locations are close to the output terminal of the chain, the SET pulse is narrowed; however, when the struck nodes are close to the input terminal, the SET pulse is broadened. SET pulses are progressively broadened up when propagating is along inverter chains. A similar broadening rate in neither NMOSFET nor PMOSFET, indicates that the SET pulse broadening effect is caused by propagation, independent of the type of struck transistors. Through analysis, the charge of floating body-induced threshold voltage hysteresis in PDSOI transistors is the main cause of pulse broadening. The positive SET pulse observed on the oscilloscope, contrary to the expectation, is due to charging and discharging of the output node capacitor. Also, the observed sub-rail-to-rail swings of the SET pulses are due to the voltage division between the internal resistance of the oscilloscope and the resistance of the PMOS transistor.
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Keywords:
- single event transients /
- pulsed laser /
- partially-depleted silicon-on-insulator /
- propagation-induced pulse broadening
[1] Bi J S, Liu G, Luo J J, Han Z S 2013 Acta Phys. Sin. 62 208501 (in Chinese) [毕津顺, 刘刚, 罗家俊, 韩郑生 2013 62 208501]
[2] Bi J S, Zeng C B, Gao L C, Liu G, Luo J J, Han Z S 2014 Chin. Phys. B 23 088505
[3] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501]
[4] Buchner S, Baze M, Brown D, McMorrow D, Melinger J 1997 IEEE Trans. Nucl. Sci. 44 2209
[5] Mavis D G, Eaton P H 2000 Military and Aerospace Applications of Programmable Devices and Technologies Conference Maryland, USA, September 26-28, 2000 p26
[6] Ladbury R L, Benedetto J, McMorrow D, Buchner S P, Label K A, Berg M D, Kim H S, Sanders A B, Friendlich M R, Phan A 2009 IEEE Trans. Nucl. Sci. 56 3334
[7] Schwank J R, Shaneyfelt M R, McMorrow D, Ferlet-Cavrois V, Dodd P E, Heidel D F, Marshall P W, Pellish J A, Label K A, Rodbell K P, Hakey M, Flores R S, Swanson S E 2010 IEEE Trans. Nucl. Sci. 57 1827
[8] Ferlet-Cavrois V, Paillet P, McMorrow D, Torres A, Gaillardin M, Melinger J S, Knudson A R, Campbell A B, Schwank J R, Vizkelethy G, Shaneyfelt M R, Hirose K, Faynot O, Jahan C, Tosti L 2005 IEEE Trans. Nucl. Sci. 52 2104
[9] Gouker P, Brandt J, Wyatt P, Tyrrell B, Soares A, Knecht J, Keast C, McMorrow D, Narasimhan B, Gadlage M, Bhuva B 2008 IEEE Trans. Nucl. Sci. 55 2854
[10] Richter A K, Arimura I 1987 IEEE Trans. Nucl. Sci. 34 1234
[11] Ferlet-Cavrois V, Massengill L W, Gouker P 2013 IEEE Trans Nucl. Sci. 60 1767
[12] Massengill L W, Tuinenga P W 2008 IEEE Trans. Nucl. Sci. 55 2861
[13] Ferlet-Cavrois V, Paillet P, McMorrow D, Fel N, Baggio J, Girard S, Duhamel O, Melinger J S, Gaillardin M, Schwank J R, Dodd P E, Shaneyfelt M R, Felix J A 2007 IEEE Trans. Nucl. Sci. 54 2338
[14] Ferlet-Cavrois V, Pouget V, McMorrow D, Schwank J R, Fel N, Essely F, Flores R S, Paillet P, Gaillardin M, Kobayashi D, Melinger J S, Duhamel O, Dodd P E, Shaneyfelt M R 2008 IEEE Trans.Nucl. Sci. 55 2842
[15] Gouker P, Brandt J, Wyatt P, Tyrrell B, Soares A, Knecht J, Keast C, McMorrow D, Narasimham B, Gadlage M, Bhuva B 2008 IEEE Trans. Nucl. Sci. 55 2854
[16] Burns J R 1964 RCA Rev. XXV 627
[17] Kayssi A I, Sakallah K A, Burks T M1992 IEEE Trans. Circuits Syst. I, Fundam. Theory Appl. 39 42
[18] Casey M C, Amusan O A, Nation S A, Loveless T D, Balasubramanian A, Bhuva B L, Reed R A, McMorrow D, Weller R A, Alles M L, Massengill L W, Melinger J S, Narasimham B 2008 IEEE Trans. Nucl. Sci. 55 3342
[19] Wirth G, Kastensmidt F L, Ribeiro I 2008 IEEE Trans. Nucl. Sci. 55 2928
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[1] Bi J S, Liu G, Luo J J, Han Z S 2013 Acta Phys. Sin. 62 208501 (in Chinese) [毕津顺, 刘刚, 罗家俊, 韩郑生 2013 62 208501]
[2] Bi J S, Zeng C B, Gao L C, Liu G, Luo J J, Han Z S 2014 Chin. Phys. B 23 088505
[3] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501]
[4] Buchner S, Baze M, Brown D, McMorrow D, Melinger J 1997 IEEE Trans. Nucl. Sci. 44 2209
[5] Mavis D G, Eaton P H 2000 Military and Aerospace Applications of Programmable Devices and Technologies Conference Maryland, USA, September 26-28, 2000 p26
[6] Ladbury R L, Benedetto J, McMorrow D, Buchner S P, Label K A, Berg M D, Kim H S, Sanders A B, Friendlich M R, Phan A 2009 IEEE Trans. Nucl. Sci. 56 3334
[7] Schwank J R, Shaneyfelt M R, McMorrow D, Ferlet-Cavrois V, Dodd P E, Heidel D F, Marshall P W, Pellish J A, Label K A, Rodbell K P, Hakey M, Flores R S, Swanson S E 2010 IEEE Trans. Nucl. Sci. 57 1827
[8] Ferlet-Cavrois V, Paillet P, McMorrow D, Torres A, Gaillardin M, Melinger J S, Knudson A R, Campbell A B, Schwank J R, Vizkelethy G, Shaneyfelt M R, Hirose K, Faynot O, Jahan C, Tosti L 2005 IEEE Trans. Nucl. Sci. 52 2104
[9] Gouker P, Brandt J, Wyatt P, Tyrrell B, Soares A, Knecht J, Keast C, McMorrow D, Narasimhan B, Gadlage M, Bhuva B 2008 IEEE Trans. Nucl. Sci. 55 2854
[10] Richter A K, Arimura I 1987 IEEE Trans. Nucl. Sci. 34 1234
[11] Ferlet-Cavrois V, Massengill L W, Gouker P 2013 IEEE Trans Nucl. Sci. 60 1767
[12] Massengill L W, Tuinenga P W 2008 IEEE Trans. Nucl. Sci. 55 2861
[13] Ferlet-Cavrois V, Paillet P, McMorrow D, Fel N, Baggio J, Girard S, Duhamel O, Melinger J S, Gaillardin M, Schwank J R, Dodd P E, Shaneyfelt M R, Felix J A 2007 IEEE Trans. Nucl. Sci. 54 2338
[14] Ferlet-Cavrois V, Pouget V, McMorrow D, Schwank J R, Fel N, Essely F, Flores R S, Paillet P, Gaillardin M, Kobayashi D, Melinger J S, Duhamel O, Dodd P E, Shaneyfelt M R 2008 IEEE Trans.Nucl. Sci. 55 2842
[15] Gouker P, Brandt J, Wyatt P, Tyrrell B, Soares A, Knecht J, Keast C, McMorrow D, Narasimham B, Gadlage M, Bhuva B 2008 IEEE Trans. Nucl. Sci. 55 2854
[16] Burns J R 1964 RCA Rev. XXV 627
[17] Kayssi A I, Sakallah K A, Burks T M1992 IEEE Trans. Circuits Syst. I, Fundam. Theory Appl. 39 42
[18] Casey M C, Amusan O A, Nation S A, Loveless T D, Balasubramanian A, Bhuva B L, Reed R A, McMorrow D, Weller R A, Alles M L, Massengill L W, Melinger J S, Narasimham B 2008 IEEE Trans. Nucl. Sci. 55 3342
[19] Wirth G, Kastensmidt F L, Ribeiro I 2008 IEEE Trans. Nucl. Sci. 55 2928
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