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An analytical model for drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator (GeOI) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is established by solving two-dimensional Poisson's equation to derive the surface potential and inversion charge in the channel region. This drain current model includes velocity-saturation, channel-length modulation and mobility-modulation effects; and it simultaneously considers the impacts of the interface-trapped charges at both gate oxide/channel and buried oxide/channel interfaces and the fixed oxide charges on the drain current. A good agreement between the simulated drain current and experimental data is achieved in both the saturation and non-saturation regions, confirming the validity of the model. Using the model, the influences of the main structural and physical parameters on transconductance, output conductance, cut-off frequency, and voltage gain of the device are investigated. These can be served as a guide for the design of the GeOI PMOSFET.
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Keywords:
- germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor /
- drain current model /
- transconductance /
- cut-off frequency
[1] Paussa A, Conzatti F, Breda D, Vermiglio R, Esseni D, Palestri P 2010 IEEE Trans. Electron Dev. 57 3239
[2] Zhang J, He J, Zhou X Y, Zhang L N, Ma Y T, Chen Q, Zhang X K, Yang Z 2012 Chin. Phys. B 21 047303
[3] Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y, Wong H S P 2001 Proc. IEEE 89 259
[4] Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys. Sin. 55 5036 (in Chinese) [陈卫兵, 徐静平, 邹晓, 李艳萍, 许胜国, 胡致富 2006 55 5036]
[5] Zhao Y Y, Qi M, Wang W B, Wang M, Zhang B 2012 Chin. Phys. B 21 018501
[6] Hu V P H, Fan M L, Su P, Chuang C T 2011 Low Power Electronics and Design International Symposium Fukuoka, Japan, August 1-3, 2011 p115
[7] Hu M J, Li C, Xu J F, Lai H K, Chen S Y 2011 Acta Phys. Sin. 60 078102 (in Chinese) [胡美娇, 李成, 徐剑芳, 赖虹凯, 陈松岩 2011 60 078102]
[8] Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta P A, Wong H S P, Saraswat K C 2011 IEEE Trans. Electron Dev. 58 59
[9] Wu Y S, Hsieh H Y, Hu V P H, Su P 2011 IEEE Electron Dev. Lett. 32 18
[10] Lime F, Ritzenthaler R, Ricoma M, Martinez F, Pascal F, Miranda E, Faynot O, Iñiguez B 2011 Solid State Electron. 57 61
[11] Ritzenthaler R, Lime F, Iñiguez B 2011 Proceedings of the 8th Spanish Conference on Electron Devices Palma de Mallorca, Spain, February 8-11, 2011 p1
[12] Zhang J, Zhang L, He J, Chan M 2010 J. Appl. Phys. 107 054507
[13] Young K K 1989 IEEE Trans. Electron Dev. 36 399
[14] Roy A S, Sallese J M, Enz C C 2006 Solid State Electron. 50 687
[15] Daelea W V D, Royer C L, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S 2011 Solid State Electron. 59 25
[16] Lim K Y, Zhou X 2002 Microelectron. Reliab. 42 1857
[17] Hutin L, Royer C L, Damlencourt J F, Hartmann J M, Grampeix H, Mazzocchi V, Arvet C, Tabone C, Previtali B, Loup V, Roure M C, Pouydebasque A, Lafond D, Vinet M, Clavelier L, Faynot O 2010 International Symposium on VLSI-TSA Hsinchu, April 26-28, 2010 p40
[18] Qi R, Dai Y H, Chen J N, Li J S 2010 Manuf. Appl. Dev. 35 534 (in Chinese) [齐锐, 代月花, 陈军宁, 李俊生 2010 器件制造与应用 35 534]
[19] Steegen A, Stucchi M, Lauwers A, Maex K 1999 Electron Devices Meeting IEDM '99. Technical Digest Washington, USA, December 5-8, 1999 p497
[20] Fan M M, Xu J P, Liu L, Bai Y R 2014 J. Semicond. 35 044004
[21] Thomas C, Haldar S, Khanna M, Rajesh S, Gupta K K, Gupta R S 1998 Microelectron. Reliab. 38 1955
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[1] Paussa A, Conzatti F, Breda D, Vermiglio R, Esseni D, Palestri P 2010 IEEE Trans. Electron Dev. 57 3239
[2] Zhang J, He J, Zhou X Y, Zhang L N, Ma Y T, Chen Q, Zhang X K, Yang Z 2012 Chin. Phys. B 21 047303
[3] Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y, Wong H S P 2001 Proc. IEEE 89 259
[4] Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys. Sin. 55 5036 (in Chinese) [陈卫兵, 徐静平, 邹晓, 李艳萍, 许胜国, 胡致富 2006 55 5036]
[5] Zhao Y Y, Qi M, Wang W B, Wang M, Zhang B 2012 Chin. Phys. B 21 018501
[6] Hu V P H, Fan M L, Su P, Chuang C T 2011 Low Power Electronics and Design International Symposium Fukuoka, Japan, August 1-3, 2011 p115
[7] Hu M J, Li C, Xu J F, Lai H K, Chen S Y 2011 Acta Phys. Sin. 60 078102 (in Chinese) [胡美娇, 李成, 徐剑芳, 赖虹凯, 陈松岩 2011 60 078102]
[8] Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta P A, Wong H S P, Saraswat K C 2011 IEEE Trans. Electron Dev. 58 59
[9] Wu Y S, Hsieh H Y, Hu V P H, Su P 2011 IEEE Electron Dev. Lett. 32 18
[10] Lime F, Ritzenthaler R, Ricoma M, Martinez F, Pascal F, Miranda E, Faynot O, Iñiguez B 2011 Solid State Electron. 57 61
[11] Ritzenthaler R, Lime F, Iñiguez B 2011 Proceedings of the 8th Spanish Conference on Electron Devices Palma de Mallorca, Spain, February 8-11, 2011 p1
[12] Zhang J, Zhang L, He J, Chan M 2010 J. Appl. Phys. 107 054507
[13] Young K K 1989 IEEE Trans. Electron Dev. 36 399
[14] Roy A S, Sallese J M, Enz C C 2006 Solid State Electron. 50 687
[15] Daelea W V D, Royer C L, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S 2011 Solid State Electron. 59 25
[16] Lim K Y, Zhou X 2002 Microelectron. Reliab. 42 1857
[17] Hutin L, Royer C L, Damlencourt J F, Hartmann J M, Grampeix H, Mazzocchi V, Arvet C, Tabone C, Previtali B, Loup V, Roure M C, Pouydebasque A, Lafond D, Vinet M, Clavelier L, Faynot O 2010 International Symposium on VLSI-TSA Hsinchu, April 26-28, 2010 p40
[18] Qi R, Dai Y H, Chen J N, Li J S 2010 Manuf. Appl. Dev. 35 534 (in Chinese) [齐锐, 代月花, 陈军宁, 李俊生 2010 器件制造与应用 35 534]
[19] Steegen A, Stucchi M, Lauwers A, Maex K 1999 Electron Devices Meeting IEDM '99. Technical Digest Washington, USA, December 5-8, 1999 p497
[20] Fan M M, Xu J P, Liu L, Bai Y R 2014 J. Semicond. 35 044004
[21] Thomas C, Haldar S, Khanna M, Rajesh S, Gupta K K, Gupta R S 1998 Microelectron. Reliab. 38 1955
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