| [1] |
Hao Guo-Qiang, Zhang Rui, Zhang Wen-Jing, Chen Na, Ye Xiao-Jun, Li Hong-Bo. Regulation and control of Schottky barrier in graphene/MoSe2 heteojuinction by asymmetric oxygen doping. Acta Physica Sinica,
2022, 71(1): 017104.
doi: 10.7498/aps.71.20210238
|
| [2] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica,
2022, 71(5): 058102.
doi: 10.7498/aps.71.20211796
|
| [3] |
Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo. Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode. Acta Physica Sinica,
2022, 71(20): 207302.
doi: 10.7498/aps.71.20220320
|
| [4] |
Liang Qian, Qian Guo-Lin, Luo Xiang-Yan, Liang Yong-Chao, Xie Quan. Modulation of MoSH/WSi2N4 Schottky-junction barrier by external electric field and biaxial strain. Acta Physica Sinica,
2022, 71(21): 217301.
doi: 10.7498/aps.71.20220882
|
| [5] |
. First Principle Study on Modulating of Schottky Barrier at Metal/4H-SiC Interface by Graphene Intercalation. Acta Physica Sinica,
2021, (): .
doi: 10.7498/aps.70.20211796
|
| [6] |
Zhang Fang, Jia Li-Qun, Sun Xian-Ting, Dai Xian-Qi, Huang Qi-Xiang, Li Wei. Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field. Acta Physica Sinica,
2020, 69(15): 157302.
doi: 10.7498/aps.69.20191987
|
| [7] |
Xu Feng1\2, Yu Guo-Hao, Deng Xu-Guang, Li Jun-Shuai, Zhang Li, Song Liang, Fan Ya-Ming, Zhang Bao-Shun. Current transport mechanism of Schottky contact of Pt/Au/n-InGaN. Acta Physica Sinica,
2018, 67(21): 217802.
doi: 10.7498/aps.67.20181191
|
| [8] |
Zhao Shou-Ren, Huang Zhi-Peng, Sun Lei, Sun Peng-Chao, Zhang Chuan-Jun, Wu Yun-Hua, Cao Hong, Wang Shan-Li, Chu Jun-Hao. A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells. Acta Physica Sinica,
2013, 62(16): 168801.
doi: 10.7498/aps.62.168801
|
| [9] |
Li Xiao-Jing, Zhao De-Gang, He Xiao-Guang, Wu Liang-Liang, Li Liang, Yang Jing, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng. Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN. Acta Physica Sinica,
2013, 62(20): 206801.
doi: 10.7498/aps.62.206801
|
| [10] |
Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming. Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica,
2012, 61(19): 198101.
doi: 10.7498/aps.61.198101
|
| [11] |
Tang Xiao-Yan, Dai Xiao-Wei, Zhang Yu-Ming, Zhang Yi-Men. Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diode. Acta Physica Sinica,
2012, 61(8): 088501.
doi: 10.7498/aps.61.088501
|
| [12] |
Xiu Ming-Xia, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao. Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure. Acta Physica Sinica,
2010, 59(12): 8856-8861.
doi: 10.7498/aps.59.8856
|
| [13] |
Deng Ze-Chao, Luo Qing-Shan, Chu Li-Zhi, Ding Xue-Cheng, Liang Wei-Hua, Fu Guang-Sheng, Wang Ying-Long. Comparison of nucleation energy of nanoparticles Si formation in substrate heating and subsequent thermal annealing. Acta Physica Sinica,
2010, 59(7): 4802-4807.
doi: 10.7498/aps.59.4802
|
| [14] |
Ding Hong-Lin, Liu Kui, Wang Xiang, Fang Zhong-Hui, Huang Jian, Yu Lin-Wei, Li Wei, Huang Xin-Fan, Chen Kun-Ji. Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure. Acta Physica Sinica,
2008, 57(7): 4482-4486.
doi: 10.7498/aps.57.4482
|
| [15] |
Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
doi: 10.7498/aps.55.6085
|
| [16] |
SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA. ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica,
2000, 49(7): 1404-1408.
doi: 10.7498/aps.49.1404
|
| [17] |
CHEN KAI-MAO, JIA YONG-QIANG, JIN SI-XUAN, WU KE, LI CHUAN-YI, GU ZHEN-NAN, ZHOU XI-HUANG. ELECTRICAL CHARACTERIZATION OF SOLID C60/Si HETEROJUNCTIONS——RECTIFYING PROPERTIES, ENERGY-BAND MODELS, AND BIAS-TEMPERATURE EFFECT. Acta Physica Sinica,
1996, 45(2): 265-273.
doi: 10.7498/aps.45.265
|
| [18] |
LI BAI-LI, GUO YI. . Acta Physica Sinica,
1995, 44(1): 133-136.
doi: 10.7498/aps.44.133
|
| [19] |
DU KAI-YING, RAO HAI-BO. NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica,
1994, 43(6): 966-972.
doi: 10.7498/aps.43.966
|
| [20] |
QI MING, LUO JIN-SHENG. A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE. Acta Physica Sinica,
1988, 37(10): 1600-1606.
doi: 10.7498/aps.37.1600
|
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