Comparison of nucleation energy of nanoparticles Si formation in substrate heating and subsequent thermal annealing

Deng Ze-Chao; Luo Qing-Shan; Chu Li-Zhi; Ding Xue-Cheng; Liang Wei-Hua; Fu Guang-Sheng; Wang Ying-Long

doi:10.7498/aps.59.4802

Abstract

In vacuum environment, the nano-crystalline silicon films were prepared by pulsed laser ablation at high temperature and room temperature respectively. The amorphous films prepared under normal temperature were thermal-annealed, which leads to crystallization. The morphology and compositon etc. of the samples were characterized by scanning electron microscopy, Raman scattering and X-ray diffraction. The results showed that the temperature threshold of Si nanoparticles formation was 700 ℃ and 850 ℃ respectively. The nucleation energy of the nanoparticles was obtained by quantitative calculation, and the reason of difference between the temperature threshold was discussed from the point of view of energy.

Keywords:

Authors and contacts

1.
Key Laboratory of Photo-Electricity Information Materials of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002,China

References

[1]	Osborne I S 2002 Science 296 2299
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[6]	Wang Y L, Deng Z C, Fu G S, Zhou Y, Chu L Z, Peng Y C 2006 Thin Solid Films 515 1897
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[8]	Fu G S, Wang Y L, Chu L Z, Zhou Y, Yu W 2005 Europhys. Lett. 69 758
[9]	Chu L Z, Lu L F, Wang Y L, Fu G S 2007 Acta Phys. Sin. 56 3374 (in Chinese) [褚立志、卢丽芳、王英龙、傅广生2007 56 3374]
[10]	Ossadnik C, Veprek S, Gregora I 1999 Thin Solid Films 337 148
[11]	Wang Y L, Deng Z C, Chu L Z, Fu G S, Peng Y C 2009 Europhys. Lett. 86 15001

Cited By

[1]	Osborne I S 2002 Science 296 2299
[2]	Qiu S H, Chen C Z, Liu C Q, Wu Y D, Li P, Lin X Y, Yu C Y 2009 Acta Phys. Sin. 58 565 (in Chinese )[邱胜桦、陈城钊、刘翠青、吴燕丹、李平、林璇英、余楚迎 2009 58 565]
[3]	Lee H S, Choi S, Kim S W 2009 Thin Solid Films 517 4070
[4]	Her Y C, Wu C L 2004 J. Appl. Phys. 96 5563
[5]	Wang Y L, Zhou Y, Chu L Z, Fu G S, Peng Y C 2005 Acta Phys. Sin. 54 1683 (in Chinese) [王英龙、周阳、褚立志、傅广生、彭英才 2005 54 1683]
[6]	Wang Y L, Deng Z C, Fu G S, Zhou Y, Chu L Z, Peng Y C 2006 Thin Solid Films 515 1897
[7]	Wang Y L, Li Y L, Fu G S 2006 Nucl. Instrum. Meth. B 252 245
[8]	Fu G S, Wang Y L, Chu L Z, Zhou Y, Yu W 2005 Europhys. Lett. 69 758
[9]	Chu L Z, Lu L F, Wang Y L, Fu G S 2007 Acta Phys. Sin. 56 3374 (in Chinese) [褚立志、卢丽芳、王英龙、傅广生2007 56 3374]
[10]	Ossadnik C, Veprek S, Gregora I 1999 Thin Solid Films 337 148
[11]	Wang Y L, Deng Z C, Chu L Z, Fu G S, Peng Y C 2009 Europhys. Lett. 86 15001

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Catalog

Vol. 59, Issue 7 - 2010-04-05

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