Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diode

Tang Xiao-Yan; Dai Xiao-Wei; Zhang Yu-Ming; Zhang Yi-Men

doi:10.7498/aps.61.088501

Abstract

The breakdown voltage of 4H-SiC junction barrier schottky diode with floating junction is larger than that of traditional junction barrier Schottky diode under the condition of the same fixed on-resistance. It is a crucial technology that the alignment of lithography between p+ region of floating junction and main junction. The simulation results obtained using two-dimensional simulator ISE show that the breakdown voltage obviously drops with the deviation of lithography increasing. Although the breakdown characteristics of the dislocation and the alignment structure are similar, the series resistance of the dislocation structure is larger than the latter when the forward voltage is larger than 2 V.

Keywords:

Authors and contacts

1.
Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the Foundation of Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education, China (Grant No. JY0100112501).

References

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Cited By

[1]	Bjoerk F, Hancock J, Treu M, Rupp R 2006 APEC '06 Twenty-First Annual IEEE (Villach: APEC) pp170--178
[2]	Millán J, Banu V, Brosselard P, Jorda X, Perez-Tomas A 2008 Semiconductor Conference CAS 2008 (Sinaia: SMICND) pp53--59
[3]	Hull B A, Sumakeris J J, Loughlin M J O, Zhang Q C 2008 IEEE Trans. Electron Dev. 55 1864
[4]	Nishio J, Ota C, Hatakeyama T, Shinohe T, Kojima K 2008 IEEE Trans. Electron Dev. 55 1954
[5]	Tang X Y, Zhang Y M, Zhang Y M 2009 Acta Phys. Sin. 58 494 (in Chinese) [汤晓燕, 张玉明, 张义门 2009 58 494]
[6]	Hatakeyama T, Watanabe T, Shinohe T, Kojima K 2004 Appl. Phys. Lett. 85 1380
[7]	Song Q W, Zhang Y M, Zhang Y M 2010 Chin. Phys. B 19 087202

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Vol. 61, Issue 8 - 2012-04-20

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