Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diode

Tang Xiao-Yan; Dai Xiao-Wei; Zhang Yu-Ming; Zhang Yi-Men

doi:10.7498/aps.61.088501

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Tang Xiao-Yan, Dai Xiao-Wei, Zhang Yu-Ming, Zhang Yi-Men. Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diodeJ. Acta Physica Sinica, 2012, 61(8): 088501. DOI: 10.7498/aps.61.088501

Citation:

Tang Xiao-Yan, Dai Xiao-Wei, Zhang Yu-Ming, Zhang Yi-Men. Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diodeJ. Acta Physica Sinica, 2012, 61(8): 088501. DOI: 10.7498/aps.61.088501

Citation:

Tang Xiao-Yan, Dai Xiao-Wei, Zhang Yu-Ming, Zhang Yi-Men. Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diodeJ. Acta Physica Sinica, 2012, 61(8): 088501. DOI: 10.7498/aps.61.088501