-
Spin-orbit torque (SOT) based on the spin-orbit coupling (SOC) effect has gained increasing attention in magnetic information storage, logical operation and neuron simulation devices because it can effectively manipulate magnetization switching, chiral magnetic domain wall, and magnetic skyrmion motions. Further improvement of the SOT efficiency and reduction of the driving current density are crucial scientific problems to be solved for high-density and low-power applications of SOT-based spintronic devices. The heavy rare-earth metal dysprosium (Dy) possesses a relatively strong SOC due to the partially filled f orbital electrons (4f10), which is expected to generate spin Hall torques. In this paper, the impact of Dy thicknesses on the SOT efficiency and SOT-driven magnetic reversal was explored in the Dy/Pt/[Co/Pt]3 magnetic multilayers, where the rare-earth Dy and [Co/Pt]3 were used as the spin-source layer and the perpendicularly magnetized ferromagnetic layer, respectively. A series of Dy/Pt/[Co/Pt]3 heterostructures with various Dy layer thicknesses (tDy) of 1, 3, 5 and 7 nm were fabricated by ultrahigh-vacuum magnetron sputtering. The perpendicular magnetic anisotropy, SOT efficiency, spin Hall angle and current-induced magnetization switching were characterized using the magnetic property and electrical transport measurements. The results showed that the switching field and magnetic anisotropic field decreased with an increase in tDy, revealing that the magnetic parameters can be regulated by the bottom Dy layer due to their structural sensitivity. However, both damping-like SOT efficiency and effective spin Hall angle (θSHeff) gradually increased with increasing tDy, indicating that the rare-earth Dy can provide additional spin current to enhance the SOT efficiency apart from the contribution of Pt/[Co/Pt]3. Particularly, the maximum θSHeff of 0.379±0.008 was achieved when tDy was 7 nm. According to the fitting analysis of the drift-diffusion model, the intrinsic spin Hall angle and spin diffusion length of the rare-earth Dy were extracted to be 0.260±0.039 and 2.234±0.383 nm, respectively, suggesting that Dy can be used as an ideal spin-source material. In addition, the critical switching current density (Jc) gradually decreased with the increase in tDy, and Jc reached a minimum value of approximately 5.3×106 A/cm2 at tDy=7 nm, which is primarily attributed to the increase of the damping-like SOT and slight decrease of the switching field. These results experimentally demonstrate a strong spin Hall effect of the rare-earth Dy, and provide a feasible route for designing SOT-based spintronic devices with low-power dissipation.
-
[1] Bhatti S, Sbiaa R, Hirohata A, Ohno H, Fukami S, Piramanayagam S N 2017 Mater. Today 20 530
[2] Tudu B, Tiwari A 2017 Vacuum 146 329
[3] Garello K, Avci C O, Miron I M, Baumgartner M, Ghosh A, Auffret S, Boulle O, Gaudin G, Gambardella P 2014 Appl. Phys. Lett. 105 212402
[4] Resnati D, Goda A, Nicosia G, Miccoli C, Spinelli A S, Compagnoni C M, 2017 IEEE Electron Device Lett. 38 461
[5] Yu G Q 2018 Nat. Electronics. 1 496–497
[6] Cubukcu M, Boulle O, Mikuszeit N, Hamelin C, Brächer T, Lamard N, Cyrille M C, Buda-Prejbeanu L, Garello K, Miron I M 2018 IEEE Trans. Magn. 54 81
[7] Liu L, Lee O J, Gudmundsen T J, Ralph D C, Buhrman R A 2012 Phys. Rev. Lett. 109 096602
[8] Emori S, Bauer U, Ahn S M, Martinez E, Beach G S 2013 Nat. Mater. 12 611
[9] Fert A, Cros V, Sampaio J 2013 Nat. Nanotechnol. 8 152–156
[10] Liu J H, Wang Z D, Xu T, Zhou H A, Zhao L, Je S G, Im M Y, Fang L, Jiang W J 2022 Chin. Phys. Lett. 39 017501
[11] Demidov V E, Urazhdin S, Ulrichs H, Tiberkevich V, Slavin A, Baither D, Schmitz G, Demokritov S O 2012 Nat. Mater. 11 1028
[12] Li L Y, Chen L N, Liu R H, Du Y W 2020 Chin. Phys. B 29 117102
[13] Miron I M, Garello K, Gaudin G, Zermatten P J, Costache M V, Auffret S, Bandiera S, Rodmacq B, Schuhl A, Gambardella P 2011 Nature 476 189
[14] Pai C F, Ou Y, Henrique L, Vilela-Leão L H, Ralph D C, Buhrman R A 2015 Phys. Rev. B 92 064426
[15] Liu L, Pai C F, Li Y, Tseng H W, Ralph D C, Buhrman R A 2012 Science 336 555
[16] Haney P M, Lee H W, Lee K J, Manchon A, Stiles M D 2013 Phys. Rev. B 87 174411
[17] Rojas-Sánchez J C, Reyren N, Laczkowski P, Savero W, Attané J P, Deranlot C, Jamet M, George J M, Vila L, Jaffrès H 2014 Phys. Rev. Lett. 112 106602
[18] Zhang W, Han W, Jiang X, Yang S H, Parkin S S P 2015 Nat. Phys. 11 496
[19] Nguyen M H, Ralph D C, Buhrman R A 2016 Phys. Rev. Lett. 116 126601
[20] Zhang C, Fukami S, Watanabe K, Ohkawara A, Gupta S D, Sato H, Matsukura F, Ohno H 2016 Appl. Phys. Lett. 109 192405
[21] Han J, Richardella A, Siddiqui S A, Finley J, Samarth N, Liu L 2017 Phys. Rev. Lett. 119 077702
[22] Zheng Z Y, Zhang Y, Zhu D Q, Zhang K, Feng X Q, He Y, Chen L, Zhang Z Z, Liu D J, Zhang Y G, Amiri P K, Zhao W S 2020 Chin. Phys. B 29 078505
[23] Lv W, Jia Z, Wang B, Lu Y, Luo X, Zhang B, Zeng Z, Liu Z 2018 ACS Appl. Mater. Interfaces 10 2843
[24] Shao Q, Yu G, Lan Y W, Shi Y, Li M Y, Zheng C, Zhu X, Li L J, Amiri P K, Wang K L 2016 Nano Lett. 16 7514
[25] Wang F, Shi G Y, Kim K W, Park H J, Jang J G, Tan H R, Lin M, Liu Y K, Kim T, Yang D S, Zhao S S, Lee K, Yang S H, Soumyanarayanan A, Lee K J, Yang H 2024 Nat. Mater. 23 768
[26] Wei L J, Li Y H, Pu Y 2024 Acta Phys. Sin. 73 018501
[27] Liu L, Qin Q, Lin W N, Li C J, Xie Q D, He S K, Shu X Y, Zhou C H, Lim Z, Yu J H, Lu W L, Li M S, Yan X B, Pennycook S J, Chen J S 2019 Nat. Nanotechnol. 14 939
[28] Liu Q B, Li J W, Zhu L J, Lin X, Xie X Y, Zhu L J 2022 Phys. Rev. Appl. 18 054079
[29] Zhu L J, Ralph D C, Buhrman R A 2018 Phys. Rev. Appl. 10 031001
[30] Reynolds N, Jadaun P, Heron J T, Jermain C L, Gibbons J, Collette R, Buhrman R A, Schlom D G, Ralph D C 2017 Phys. Rev. B 95 064412
[31] Ueda K, Pai C F, Tan A J, Mann M, Beach G S D 2016 Appl. Phys. Lett. 108 232405
[32] Wong Q Y, Murapaka C, Law W C, Gan W L, Lim G J, Lew W S 2019 Phys. Rev. Appl. 11 024057
[33] Jin T L, Law W C, Kumar D, Luo F L, Wong Q Y, Lim G J, Wang X, Lew W S, Piramanayagam S N 2020 APL Mater. 8 111111
[34] Li D, Li M R, Lai Y P, Zhang W, Liu X Y, Quan Z Y, Xu X H 2024 Appl. Phys. Lett. 125 152403
[35] Takeuchi Y, Zhang C L, Okada A, Sato H, Fukami S, Ohno H 2018 Appl. Phys. Lett. 112 192408
[36] Li D, Ma R, Cui B S, Yun J J, Quan Z Y, Zuo Y L, Xi L, Xu X H 2020 Appl. Surf. Sci. 513 145768
[37] Kim J, Sinha J, Hayashi M, Yamanouchi M, Fukami S, Suzuki T, Mitani S, Ohno H 2013 Nat. Mater. 12 240
[38] Torrejon J, Kim J, Sinha J, Mitani S, Hayashi M, Yamanouchi M, Ohno H 2014 Nat. Commun. 5 4655
[39] Hayashi M, Kim J, Yamanouchi M, Ohno H 2014 Phys. Rev. B 89 144425
[40] Li D, Chen S W, Zuo Y L, Yun J J, Cui B S, Wu K, Guo X B, Yang D Z, Wang J B, Xi L 2018 Sci. Rep. 8 12959
[41] Wu D, Yu G Q, Chen C T, Razavi S A, Shao Q M, Li X, Zhao B C, Wong K L, He C L, Zhang Z Z, Amiri P K, Wang K L 2016 Appl. Phys. Lett. 109 222401
[42] Yu J W, Qiu X P, Legrand W, Yang H 2016 Appl. Phys. Lett. 109 042403
[43] Liu L, Moriyama T, Ralph D C, Buhrman R A 2011 Phys. Rev. Lett. 106 036601
[44] Wang X R, Meng A, Yao Y X, Lin F Y, Bai Y, Ning X B, Li B, Zhang Y, Nie T X, Shi S, Zhao W S 2024 Nano Lett. 24 6931−6938
Metrics
- Abstract views: 39
- PDF Downloads: 2
- Cited By: 0
下载:
