Effect of proton cumulative radiation on saturation output in CMOS image sensors

PENG Zhigang; BAI Haojie; LIU Fang; LI Yang; HE Huan; LI Pei; HE Chaohui; LI Yonghong

doi:10.7498/aps.74.20241352

Abstract

Complementary metal oxide semiconductor (CMOS) image sensors have been increasingly widely used in the field of radiation environments due to their numerous advantages, and their radiation effects have also attracted much attention. Some experimental studies have shown that the saturation output of CMOS image sensors decreases after irradiation, while others have reported that it increases. In this work, the further in-depth research on the inconsistent results is conducted based on the proton irradiation experiments and TCAD simulations, and the degradation mechanism in full well capacity, conversion factor, and saturation output of the 4T pinned photodiode (PPD) CMOS image sensors due to proton cumulative radiation effects are also analyzed. In experiments, the sensors are irradiated by 12 MeV and 60 MeV protons with a fluence up to 2× 10¹² cm^–2. The sensors are unbiased during irradiation. The experimental results show that proton irradiation at 12 MeV and 60 MeV result in an increase of 8.2% and 7.3% in conversion factor, respectively, and a decrease of 7.3% and 3.8% in full well capacity, respectively. The saturation output shows no significant change trend under 12 MeV proton irradiation, but increases by 3% under 60 MeV proton irradiation. In the TCAD simulation, a three-dimensional 4T PPD pixel model is constructed. A simulation method that combines the trap and gamma radiation model in TCAD with the mathematical model of minority carrier lifetime is used to simulate global and local cumulative proton irradiation in order to analyze the degradation mechanism. It is proposed that the degradation of saturation output at the pixel level is determined by the full well capacity of PPD, the physical characteristics of the reset transistor and the capacitance of floating diffusion, but they have opposite effects. Proton irradiation leads to the accumulation of oxide-trapped positive charges in the shallow trench isolation on both sides of PPD, resulting in the formation of leakage current path in silicon, thereby reducing the full well capacity. A decrease in full well capacity leads to a decrease in saturation output. While, the radiation effect of the reset transistor causes the potential of floating diffusion (FD) to increase during the FD reset phase, further leading to an increase in saturation output. The irradiation causes the capacitance of the floating diffusion to decrease, resulting in an increase in conversion factor and consequently increasing the saturation output. The difference in radiation sensitivity among the three influence factors at the pixel level may result in a decrease or increase in saturation output with proton fluence increasing. The above work comprehensively reveals and analyzes the mechanisms of degradation in full well capacity, conversion factor and saturation output after irradiation, and the research results have certain guiding significance for analyzing the radiation damage to CMOS image sensors.

Keywords:

Authors and contacts

School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China

Corresponding author: LI Yonghong, yonghongli@xjtu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12005159).

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References

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Cited By

图 1 (a) CIS芯片及图像采集卡; (b) 测试系统的程控暗箱; (c) 质子辐照实验示意图

Figure 1. (a) CIS and image acquisition card; (b) the dark box of test system; (c) schematic diagram of CIS proton irradiation experiment setup.

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图 2 系统增益随质子注量变化

Figure 2. Overall system gain versus the proton fluence.

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图 3 (a) 平均输出信号; (b) 满阱容量随质子注量变化

Figure 3. (a) Mean signal level; (b) full well capacity versus proton fluence.

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图 4 平均饱和输出随质子注量变化

Figure 4. Mean saturation outputs versus the proton fluence.

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图 5 TCAD中建立的4T PPD像元模型　(a) 三维模型, STI和PMD略去以便于展示; (b) 沿(a)图X = 1.2 μm的横截面

Figure 5. The 4T PPD CIS pixel model built in TCAD: (a) 3D model, STI, and PMD removed for visualization; (b) 2D cross section taken along the X = 1.2 μm surface in (a).

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图 6 仿真时序及FD电势输出

Figure 6. Simulation driving timings and the potential output of FD.

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图 7 4T PPD像元输出电压随光照强度变化

Figure 7. Output variation of the 4T PPD CIS model with light intensity.

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图 8 全局质子辐照前后氧化物中陷阱正电荷分布　(a) 辐照前; (b) 质子注量1.0×10¹² cm^–2

Figure 8. Distribution of trapped positive charges in the oxide: (a) Before irradiation; (b) proton fluence of 1.0×10¹² cm^–2.

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图 9 12 MeV全局质子辐照　(a) PPD内电子数量; (b) 满阱容量

Figure 9. Global irradiation simulation by 12 MeV protons: (a) Total electron count within the PPD; (b) FWC.

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图 10 辐照前后PPD两侧氧化物陷阱正电荷和电子浓度分布　(a) 辐照前陷阱正电荷; (b) 辐照后陷阱正电荷; (c) 辐照前电子浓度; (d) 辐照后电子浓度

Figure 10. Distribution of oxide-trapped positive charges in STI on both sides of the PPD during FD reset stage: (a) Positive charges before irradiation; (b) positive charges after irradiation; (c) electron concentration distribution before irradiation; (d) electron concentration distribution after irradiation.

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图 11 12 MeV全局质子辐照　(a) FD电势; (b) 饱和输出

Figure 11. Global irradiation simulation by 12 MeV protons: (a) FD potential; (b) saturation output.

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图 12 质子局部辐照(Y > 2.1 μm)　(a) 12 MeV质子辐照PPD内电子数量; (b) 满阱容量

Figure 12. Local irradiation (Y > 2.1 μm): (a) Total electron count within the PPD irradiated by 12 MeV protons; (b) FWC.

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图 13 质子局部辐照(Y > 2.1 μm)　(a) 12 MeV质子辐照FD电势; (b) 饱和输出

Figure 13. Local irradiation (Y > 2.1 μm): (a) FD potential irradiated by 12 MeV protons; (b) saturation output.

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图 14 质子局部辐照(Y < 2.1 μm)　(a) 12 MeV质子辐照PPD内电子数量; (b) 满阱容量

Figure 14. Local irradiation (Y < 2.1 μm): (a) Total electron count within the PPD irradiated by 12 MeV protons; (b) FWC.

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图 15 质子局部辐照(Y < 2.1 μm)　(a) 12 MeV质子辐照FD电势变化; (b) 饱和输出变化

Figure 15. Local irradiation (Y < 2.1 μm): (a) FD potential irradiated by 12 MeV protons; (b) saturation output.

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图 16 质子局部辐照(Y < 2.1 μm)前后浮置扩散区耗尽层厚度　(a) 辐照前; (b) 12 MeV质子辐照后; (c) 60 MeV质子辐照后

Figure 16. Depletion region of FD region before and after local proton irradiation simulation (Y < 2.1 μm): (a) Before irradiation; (b) after irradiation by 12 MeV protons; (b) after irradiation by 60 MeV protons.

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图 17 60 MeV质子局部辐照(Y < 2.1 μm) TG下方沟道和浮置扩散区的电子浓度

Figure 17. Electron density in the channel below TG and FD region after local proton irradiation simulation (Y < 2.1 μm).

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表 1 辐照参数

Table 1. Irradiation parameters.

CIS编号	质子能量/MeV	最大质子注量/cm^–2	DDD/(TeV·g^–1)	TID/krad(Si)
CIS_1	12	2.0×10¹²	17638	962
CIS_2, 3, 4	60	2.0×10¹²	8286	275

DownLoad: CSV

表 2 12 MeV和60 MeV质子等效计算结果

Table 2. Equivalent results for 12 MeV and 60 MeV protons.

质子能量 /MeV	质子注量 /(10¹¹cm^–2)	等效中子注量 /(10¹¹ cm^–2)	等效TID /krad(Si)
12	1.0	3.0	48.1
	4.0	12.0	192.3
	7.0	21.0	336.6
	10.0	30.0	480.8
60	1.0	1.0	13.7
	4.0	4.0	55.1
	7.0	7.0	96.4
	10.0	10.0	137.4

DownLoad: CSV

map

[1]	王祖军, 刘静, 薛院院, 何宝平, 姚志斌, 盛江坤 2017 半导体光电 38 1 Wang Z J, Liu J, Xue Y Y, He B P, Yao Z B, Sheng J K 2017 Semiconductor Optoelectronics 38 1
[2]	Goiffon V, Estribeau M, Magnan P 2009 IEEE Trans. Electron Devices 56 2594 Google Scholar
[3]	Virmontois C, Goiffon V, Magnan P, Girard S, Inguimbert C, Petit S, Rolland G, Saint-Pe O 2010 IEEE Trans. Nucl. Sci. 57 3101
[4]	Le Roch A, Virmontois C, Paillet P, Belloir J M, Rizzolo S, Marcelot O, Dewitte H, Van Uffelen M, Casellas L M, Magnan P, Goiffon V 2020 IEEE Trans. Nucl. Sci. 67 1241 Google Scholar
[5]	汪波, 李豫东, 郭旗, 刘昌举, 文林, 玛丽娅, 孙静, 王海娇, 丛忠超, 马武英 2014 63 056102 Google Scholar Wang B, Li Y D, Guo Q, Liu C J, Wen L, Ma L Y, Sun J, Wang H J, Cong Z C, Ma W Y 2014 Acta Phys. Sin. 63 056102 Google Scholar
[6]	王帆, 李豫东, 郭旗, 汪波, 张兴尧, 文林, 何承发 2016 65 024212 Google Scholar Wang F, Li Y D, Guo Q, Wang B, Zhang X Y, Wen L, He C F 2016 Acta Phys. Sin. 65 024212 Google Scholar
[7]	Rizzolo S, Goiffon V, Estribeau M, Paillet P, Marcandella C, Durnez C, Magnan P 2018 IEEE Trans. Nucl. Sci. 65 84 Google Scholar
[8]	汪波, 李豫东, 郭旗, 文林, 孙静, 王帆, 张兴尧, 玛丽娅 2015 强激光与粒子束 27 210 Google Scholar Wang B, Li Y D, Guo Q, Wen L, Sun J, Wang F, Zhang X Y, Ma L Y 2015 High Power Laser Part. Beams 27 210 Google Scholar
[9]	汪波, 李豫东, 郭旗, 刘昌举, 文林, 任迪远, 曾骏哲, 玛丽娅 2015 64 084209 Google Scholar Wang B, Li Y D, Guo Q, Liu C J, Wen L, Ren D Y, Zeng J Z, Ma L Y 2015 Acta Phys. Sin. 64 084209 Google Scholar
[10]	Fu J, Feng J, Li Y D, Guo Q, Wen L, Zhou D, Zhang X, Cai Y L, Liu B K 2021 Radiat. Phys. Chem. 182 109384 Google Scholar
[11]	Wang Z J, Xue Y Y, Guo X Q, Bian J Y, Yao Z B, He B P, Ma W Y, Sheng J K, Dong G T, Liu Y 2018 Nucl. Instrum. Methods A 895 35 Google Scholar
[12]	Goiffon V, Estribeau M, Marcelot O, Cervantes P, Magnan P, Gaillardin M, Virmontois C, Martin-Gonthier P, Molina R, Corbiere F, Girard S, Paillet P, Marcandella C 2012 IEEE Trans. Nucl. Sci. 59 2878 Google Scholar
[13]	Wang Z J, Ma W Y, Huang S Y, Yao Z B, Liu M B, He B P, Liu J, Sheng J K, Xue Y 2016 AIP Adv. 6 035205 Google Scholar
[14]	Meng X, Stefanov K D, Holland A D 2020 IEEE Trans. Nucl. Sci. 67 1107 Google Scholar
[15]	Virmontois C, Durnez C, Estribeau M, Cervantes P, Avon B, Goiffon V, Magnan P, Materne A, Bardoux A 2017 IEEE Trans. Nucl. Sci. 64 38 Google Scholar
[16]	Lai S K, Wang Z J, Huang G, Xue Y Y, Nie X, Tang N, Yan S X, Wang X H 2023 Nucl. Instrum. Methods A 1050 168069 Google Scholar
[17]	杨勰, 霍勇刚, 王祖军, 尚爱国, 薛院院, 贾同轩 2022 光学学报 42 0723002 Google Scholar Yang X, Huo Y G, Wang Z J, Shang A G, Xue Y Y, Jia T X 2022 Acta Opt. Sin. 42 0723002 Google Scholar
[18]	Peng Z G, Fu Y J, Wei Y, Zuo Y H, Niu S L, Zhu J H, Guo Y X, Liu F, Li P, He C H, Li Y H 2024 AIP Advances 14 015211 Google Scholar
[19]	Wang Z M, Chen W, Qiu M T, Yan Y H, Zhang H, Wang M W, Wang B C, Yang Y, Wang D, Liu W L, Wang M C, Lv W, Zhao M T, Zhao C, Wei C Y, Yao H J, Zheng S X, Wang X W, Guan X L, Xing Q Z, Cheng C, Du T B, Zhang H Y, Lei Y, Wang D, Du C T, Ma P F, Liu X Y, Li Y, Ye W B, Yu X D 2022 Nucl. Instrum. Methods A 1027 166283 Google Scholar
[20]	Khan U, Sarkar M 2018 IEEE Trans. Electron Devices 65 2892 Google Scholar
[21]	Wang Z J, Xue Y Y, Wang Z M, Chen W, Yin L Y, Wang X H, Nie X, Lai S K, Huang G, Wang M C, Ding L L, He B P, Ma W Y, Gou S L 2024 Nucl. Instrum. Methods A 1058 168784 Google Scholar
[22]	Petrosyants K O, Kozhukhov M V 2016 IEEE Trans. Nucl. Sci. 63 2016 Google Scholar
[23]	Poivey C, Hopkinson G 2009 ESA—EPFL Space Center Workshop June, 2009 p9
[24]	Wang C H, Bai X Y, Chen W, Yang S C, Liu Y, Jin X M, Ding L L 2015 Nucl. Instrum. Methods A 796 108 Google Scholar
[25]	Gregory B L, Gwyn C W 1970 IEEE Trans. Nucl. Sci. 17 325 Google Scholar
[26]	Marshall C J , Marshall P W 1999 Nuclear and Space Radiation Effects Conference, Short Course Norfolk, Virginia, July 12–16, 1999 p50
[27]	Lee M S, Lee H C 2013 IEEE Trans. Nucl. Sci. 60 3084 Google Scholar
[28]	Johnston A H, Swimm R T, Allen G R, Miyahira T F 2009 IEEE Trans. Nucl. Sci. 56 1941 Google Scholar
[29]	Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Chen M, Bi D W, Zou S C 2011 IEEE Trans. Nucl. Sci. 58 1332 Google Scholar

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Vol. 74, Issue 2 - 2025-01-20

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