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In this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory (SRAM) is irradiated under different total doses. After the SOI SRAM is irradiated by the 60Co-γ ray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error.
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Keywords:
- partial-depletion-silicon-on insulator /
- static random access memory /
- total-dose effects /
- power supply current
[1] Liu X Y, Liu Y L, Sun H F, Wu D X, He Z J, Liu Z L 2002 Chin. J. Semiconductors 23 213 (in Chinese) [刘新宇, 刘运龙, 孙海锋, 吴德馨, 和致经, 刘忠立 2002 半导体学报 23 213]
[2] Liu S T, Golke K W, Anthony D 2003 IEEE Trans. Nucl. Sci. 50 2095
[3] Liu H Y, Liu M S, Hughes H L 2006 IEEE Trans. Nucl. Sci. 53 3502
[4] Baggio J, Ferlet-cavrois V, Lambert D, Paillet P, Wrobel F, Hirose K, Saito H, Blckmore E W 2005 IEEE Trans. Nucl. Sci. 52 2319
[5] Han Z S 2007 China Electronics News C01 (in Chinese) [韩郑生 2007 中国电子报 C01]
[6] Liu S T, Heikkila W W, Golke K W, Anthony D, Hurst A, Kirchner G, Jenkins W C, Hughes H L, Mitra S, Ioannou D E 2003 IEEE Trans. Nucl .Sci. 50 2095
[7] Brady F T, Brown R, Rockett L, Vasquez J 1998 IEEE Trans. Nucl. Sci. 45 2436
[8] Fecher P S, Dougal G D, Sullwold J G 1997 IEEE Trans. Nucl. Sci. 44 172
[9] Guo T L, Zhao F Z, Liu G, Li D L, Li J, Zhao L X, Zhou X Y, Hai C H, Han Z S 2007 Chin. J. Semiconductors 28 1184 (in Chinese) [郭天雷, 赵发展, 刘刚, 李多力, 李静, 赵立新, 周小茵, 海潮和, 韩郑生 2007 半导体学报 28 1184]
[10] Zhao K, Liu Z L, Yu F, Gao J T, Xiao Z Q, Hong G S 2007 Chin. J. Semiconductors 28 1139 (in Chinese) [赵凯, 刘忠立, 于芳, 高见头, 肖志强, 洪根深 2007 半导体学报 28 1139]
[11] Guo T L, Han Z S, Hai C H, Zhou X Y, Li D L, Zhao L X 2007 Chin. J. Electron Dev. 30 794 (in Chinese) [郭天雷, 韩郑生, 海潮和, 周小茵, 李多力, 赵立新 2007 电子器件 30 794]
[12] Li M, Yu X F, Lu J, Gao B, Cui J W, Zhou D, Xu F Y, Xi S B, Wang F 2011 Nucl. Tech. 34 452 (in Chinese) [李明, 余学峰, 卢健, 高博, 崔江维, 周东, 许发月, 席善斌, 王飞 2011 核技术 34 452]
[13] Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 036106]
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[1] Liu X Y, Liu Y L, Sun H F, Wu D X, He Z J, Liu Z L 2002 Chin. J. Semiconductors 23 213 (in Chinese) [刘新宇, 刘运龙, 孙海锋, 吴德馨, 和致经, 刘忠立 2002 半导体学报 23 213]
[2] Liu S T, Golke K W, Anthony D 2003 IEEE Trans. Nucl. Sci. 50 2095
[3] Liu H Y, Liu M S, Hughes H L 2006 IEEE Trans. Nucl. Sci. 53 3502
[4] Baggio J, Ferlet-cavrois V, Lambert D, Paillet P, Wrobel F, Hirose K, Saito H, Blckmore E W 2005 IEEE Trans. Nucl. Sci. 52 2319
[5] Han Z S 2007 China Electronics News C01 (in Chinese) [韩郑生 2007 中国电子报 C01]
[6] Liu S T, Heikkila W W, Golke K W, Anthony D, Hurst A, Kirchner G, Jenkins W C, Hughes H L, Mitra S, Ioannou D E 2003 IEEE Trans. Nucl .Sci. 50 2095
[7] Brady F T, Brown R, Rockett L, Vasquez J 1998 IEEE Trans. Nucl. Sci. 45 2436
[8] Fecher P S, Dougal G D, Sullwold J G 1997 IEEE Trans. Nucl. Sci. 44 172
[9] Guo T L, Zhao F Z, Liu G, Li D L, Li J, Zhao L X, Zhou X Y, Hai C H, Han Z S 2007 Chin. J. Semiconductors 28 1184 (in Chinese) [郭天雷, 赵发展, 刘刚, 李多力, 李静, 赵立新, 周小茵, 海潮和, 韩郑生 2007 半导体学报 28 1184]
[10] Zhao K, Liu Z L, Yu F, Gao J T, Xiao Z Q, Hong G S 2007 Chin. J. Semiconductors 28 1139 (in Chinese) [赵凯, 刘忠立, 于芳, 高见头, 肖志强, 洪根深 2007 半导体学报 28 1139]
[11] Guo T L, Han Z S, Hai C H, Zhou X Y, Li D L, Zhao L X 2007 Chin. J. Electron Dev. 30 794 (in Chinese) [郭天雷, 韩郑生, 海潮和, 周小茵, 李多力, 赵立新 2007 电子器件 30 794]
[12] Li M, Yu X F, Lu J, Gao B, Cui J W, Zhou D, Xu F Y, Xi S B, Wang F 2011 Nucl. Tech. 34 452 (in Chinese) [李明, 余学峰, 卢健, 高博, 崔江维, 周东, 许发月, 席善斌, 王飞 2011 核技术 34 452]
[13] Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 036106]
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