Multi-band response Cs2AgBiBr6 double perovskite photodetector based on TiO2 nanopillars

Sun Tang-You; Yu Yan-Li; Qin Zu-Bin; Chen Zan-Hui; Chen Jun-Li; Jiang Yue; Zhang Fa-Bi

doi:10.7498/aps.73.20231919

Abstract

Photodetectors are widely used in the fields of environmental monitoring, medical analysis, security surveillance, optical communication and biosensing due to their high responsiveness, fast response time, low power consumption, good stability and low processing cost. Fully inorganic lead-free perovskite material (Cs₂AgBiBr₆) has received a lot of attention in recent years in the research of photodetector applications due to its advantages of long carrier lifetime, high stability, moderate forbidden bandwidth, and environmental friendliness. For perovskite photodetectors, the semiconductor nanopillar array structure can effectively reduce the reflection loss of light from the surface to improve the absorption of incident light in the device and inhibit the exciton complexes in the device, and the good energy level matching between TiO₂ and Cs₂AgBiBr₆ can effectively promote the transport and extraction of carriers in the device. However, there are few reports on the use of TiO₂ nanopillar arrays as a transport layer to improve the performance of Cs₂AgBiBr₆ photodetectors. In this work, high-quality Cs₂AgBiBr₆ thin films with large grain size, no visible pinholes, and good uniform coverage are successfully prepared by a low-pressure-assisted spin-coating method under ambient conditions. Hydrothermally grown TiO₂ nanopillar arrays are embedded into the Cs₂AgBiBr₆ layer to form a close core-shell structure, increasing the physical contact area between the two to ensure more effective electron injection and charge separation, and to improve the carrier transport efficiency in the device. Multi-band responsive Cs₂AgBiBr₆ double perovskite photodetectors based on TiO₂ nanopillars are excited at multiple wavelengths of 365 nm and 405 nm with high light response and good stability and reproducibility, resulting in average switching ratios of 522 and 2090, respectively. When the light source is excited at 365 nm and 405 nm with a light intensity of 0.056 W/cm², the responsivity is 0.019 A/W and 0.057 A/W, respectively, and the specific detectivity is 1.9 × 10¹⁰ Jones and 5.6 × 10¹⁰ Jones, respectively. Comparing with the Cs₂AgBiBr₆ perovskite photodetector based on a planar TiO₂ electron transport layer, the average switching ratios are improved by a factor of 65 and 110, the responsivities are improved by 35% and 256%, and the specific detectivity are improved by a factor of 6.9 and 25, respectively. In this work, the photoelectric performance of Cs₂AgBiBr₆ photodetector is improved by using TiO₂ nanopillars as an electron transport layer. It provides a reference solution for developing high-performance Cs₂AgBiBr₆ perovskite photodetectors in future.

Keywords:

Authors and contacts

Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China

Corresponding author: Chen Zan-Hui, zhchen@guet.edu.cn ; Zhang Fa-Bi, zhangfabi@outlook.com

Funds: Project supported by the Natural Science Foundation of Guangxi, China (Grant No. GuiKe AD23026253), the National Natural Science Foundation of China (Grant Nos. 52262022, 62205080), the Key Laboratory of Precision Navigation Technology and Application of Guangxi Province, China (Grant Nos. DH202202, DH202302), and the Key Laboratory of Brain-Like Computing and Intelligent Chip Open Fund Project of Guangxi Province, China (Grant No. BCIC-23-K6).

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References

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Cited By

图 1 Cs₂AgBiBr₆/TiO₂ SL@NPs光电探测器制备工艺　(a) TiO₂SL的形成; (b) TiO₂ NPs的生长; (c) 前驱体溶液和基底的预热处理; (d) 旋涂法沉积Cs₂AgBiBr₆薄膜; (e) 低压辅助处理; (f) 退火处理; (g) 热蒸镀沉积Au电极; (h) 钙钛矿光电探测器三维结构示意图

Figure 1. Preparation process of Cs₂AgBiBr₆/TiO₂ SL@NPs photodetectors: (a) Formation of TiO₂ SL; (b) growth of TiO₂ NPs; (c) preheating treatment of precursor solution and substrate; (d) spin-coating method for deposition of Cs₂AgBiBr₆ thin film; (e) low pressure auxiliary treatment; (f) annealing treatment; (g) thermal vapour deposition of Au electrodes; (h) schematic diagram of three-dimensional structure of perovskite photodetectors.

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图 2 (a), (b) Cs₂AgBiBr₆/FTO器件表面和截面的SEM图; (c), (d) Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO器件表面和截面的SEM图

Figure 2. (a), (b) SEM of the surface and cross-section of the Cs₂AgBiBr₆/FTO device, respectively; (c), (d) SEM of the surface and cross-section of the Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO device, respectively.

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图 3 Cs₂AgBiBr₆层和Cs₂AgBiBr₆/TiO₂ SL@NPs层的XRD图, 其中Cs₂AgBiBr₆的模拟XRD图由参考文献[32]获得

Figure 3. XRD patterns of the Cs₂AgBiBr₆ layer and the Cs₂AgBiBr₆/TiO₂ SL@NPs layer, where the simulated XRD patterns of Cs₂AgBiBr₆ were obtained from Ref. [32].

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图 5 (a) Cs₂AgBiBr₆/FTO, TiO₂ SL@NPs/FTO和Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO器件的紫外-可见吸收光谱图; (b) Cs₂AgBiBr₆/FTO, Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO器件的稳态PL光谱图; (c), (d) 分别为Cs₂AgBiBr₆和TiO₂的Tauc图

Figure 5. (a) UV-vis absorption spectra of Cs₂AgBiBr₆/FTO, TiO₂ SL@NPs/FTO and Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO devices; (b) steady-state PL spectra of Cs₂AgBiBr₆/FTO, Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO devices; (c), (d) Tauc plots for Cs₂AgBiBr₆ and TiO₂, respectively.

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图 4 Cs₂AgBiBr₆/TiO₂ SL@NPs钙钛矿光电探测器在光照条件下的工作机制图

Figure 4. Mechanism of operation of Cs₂AgBiBr₆/TiO₂ SL@NPs perovskite photodetectors in light conditions.

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图 6 Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO器件在黑暗条件下所获暗电流值以及被365 nm和405 nm波长光源以不同光功率激发所得光电流值对比　(a) 0.31 W/cm²; (b) 0.152 W/cm²; (c) 0.094 W/cm²; (d) 0.056 W/cm²

Figure 6. Comparison of the dark current values obtained by the Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO device under dark conditions and the photocurrent values obtained by being excited by 365 nm and 405 nm wavelength light sources at different optical power: (a) 0.31 W/cm²; (b) 0.152 W/cm²; (c) 0.094 W/cm²; (d) 0.056 W/cm².

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图 7 Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO光电探测器的时域光响应电流(偏压: 0 V、入射光强度: 0.31 W/cm²)　(a), (b) 分别为365 nm和405 nm波长光源(开/关)激发的循环I-T曲线图; (c), (d) 分别为365 nm和405 nm波长光源激发的单循环I-T曲线图

Figure 7. Time-domain optical response current of the Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO photodetector (Bias voltage: 0 V, incident light intensity: 0.31 W/cm²): (a), (b) Cyclic I-T curves for the excitation of light source (on/off) at 365 and 405 nm wavelengths, respectively; (c), (d) single-cycle I-T curves for the excitation of light source at 365 and 405 nm wavelengths, respectively.

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图 8 Cs₂AgBiBr₆/TiO₂ SL/FTO光电探测器的SEM图　(a)表面; (b)截面

Figure 8. SEM images of Cs₂AgBiBr₆/TiO₂ SL/FTO photodetector: (a) Surface section; (b) cross section.

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图 9 Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO光电探测器与Cs₂AgBiBr₆/TiO₂ SL/FTO光电探测器性能指标对比　(a), (b)分别为365 nm和405 nm波长光源以不同光强激发两种器件所获光电流对比以及在黑暗条件下所获暗电流对比; (c), (d)分别为365 nm和405 nm波长光源激发两种器件所获响应度随着入射光强变化的曲线图; (e), (f)分别为365 nm和405 nm波长光源激发两种器件所获比探测率随入射光强变化的曲线图

Figure 9. Comparison of the performance indexes of Cs₂AgBiBr₆/TiO₂ SL@NPs/FTO photodetectors and Cs₂AgBiBr₆/TiO₂ SL/FTO photodetectors: (a), (b) Comparison of photocurrents obtained by exciting the two devices with different light intensities at 365 nm and 405 nm wavelengths, respectively, and the comparison of dark currents obtained under dark conditions; (c), (d) plots of the variation of the responsivity with the incident light intensity obtained by exciting the two devices with 365 nm and 405 nm wavelength light sources, respectively; (e), (f) plots of specific detectivity versus incident light intensity for two devices excited by 365 nm and 405 nm wavelength sources, respectively.

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表 1 Cs₂AgBiBr₆基光电探测器的光响应性能比较

Table 1. Comparison of photoresponse performance of Cs₂AgBiBr₆-based photodetectors.

Device structure	Measurement conditions	Responsivity/(A·W^–1)	D^*/(10⁹ Jones)	Ref.
ITO/Cs₂AgBiBr₆ single crystal/ITO	1 V, 460 nm	4 × 10^–5	20	[46]
Ag/Cs₂AgBiBr₆ single crystal	5 V, 400 nm	0.92	1.38	[47]
Cs₂AgBiBr₆/SnO₂/ZnO NRs	405 nm	0.608	29.7	[43]
Cs₂AgBiBr₆/SnO₂	350 nm	0.11	21	[48]
Cs₂AgBiBr₆/TiO₂ SL	–3 V, 405 nm	0.016	2.1	This work
Cs₂AgBiBr₆/TiO₂ SL	–3 V, 365 nm	0.014	2.4	This work
Cs₂AgBiBr₆/TiO₂ SL@NPs	–3 V, 405 nm	0.057	56	This work
Cs₂AgBiBr₆/TiO₂ SL@NPs	–3 V, 365 nm	0.019	19	This work

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[28]	Manjunath V, Bimli S, Shaikh P A, Ogale S B, Devan R S 2022 J. Mater. Chem. C 10 15725 Google Scholar
[29]	Chen C, Zheng S J, Song H W 2021 Chem. Soc. Rev. 50 7250 Google Scholar
[30]	Xiao B, Tan Y, Yi Z J, Luo Y B, Jiang Q H, Yang J Y 2021 ACS Appl. Mater. Interfaces 13 37027 Google Scholar
[31]	Qin K, Dun G H, Li Y Y, et al. 2023 ACS Appl. Mater. Interfaces 15 37640 Google Scholar
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[33]	Djokic V R, Marinkovic A D, Petrovic R D, Ersen O, Zafeiratos S, Mitric M, Ophus C, Radmilovic V R, Janackovic D T 2020 ACS Appl. Mater. Interfaces 12 33058 Google Scholar
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Vol. 73, Issue 7 - 2024-04-05

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Multi-band response Cs₂AgBiBr₆ double perovskite photodetector based on TiO₂ nanopillars

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Corresponding author: Chen Zan-Hui, zhchen@guet.edu.cn ; Zhang Fa-Bi, zhangfabi@outlook.com

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