Self-driven near infrared photoelectric detector based on C14H31O3P-Ti3C2/Au Schottky junction

Du Li-Jie; Chen Jing-Wen; Wang Rong-Ming

doi:10.7498/aps.72.20230480

Abstract

Ti₃C₂T_x, as one of new two-dimensional materials MXene, has abundant surface functional groups (—OH, —F, and —O, etc.) and can exhibit semiconductor properties through further surface functionalization. In addition, it has excellent absorption capabilities for both infrared and visible light. Currently, there is limited research on applying the semiconductor properties of Ti₃C₂T_x to infrared photodetectors. In this study, a self-driven near-infrared photodetector based on a C₁₄H₃₁O₃P-Ti₃C₂/Au Schottky junction is developed. The modified C₁₄H₃₁O₃P-Ti₃C₂ two-dimensional semiconductor is prepared by a simple solution method, in which the phosphonic acid group reacts with the hydroxyl group on the Ti₃C₂T_x surface. The C₁₄H₃₁O₃P-Ti₃C₂/Au photodetector is constructed by using a drop-coating method at room temperature. The observation of an S-shaped curve in the I-V characteristics indicates the formation of a Schottky junction between C₁₄H₃₁O₃P-Ti₃C₂ nanosheets and the Au electrode. The device exhibits good detection performance in the near-infrared band (808–1342 nm), with a maximum responsivity of 0.28 A/W, a detectivity of 4.3×10⁷ Jones and an external quantum efficiency (EQE) of 32.75% under 1064 nm infrared light illumination. The I_on/I_off ratio is 10.4, which is about 7.3 times higher than that under 1342 nm light. The response time and the recovery time of the device are 0.9 s and 0.5 s, respectively. After 10 cycles of I-t, the photocurrent does not show any significant decay, indicating excellent repeatability and cycle stability of the device. Owing to the built-in electric field formed by the Schottky junction, photo-generated electrons and holes can quickly separate and produce photocurrent in the external circuit without the need for external voltage driving. In addition, the C₁₄H₃₁O₃P-Ti₃C₂ film obtained by drop-casting on Au is composed of several layers of nanosheets that are randomly stacked, which can effectively relax the plasma momentum limitation, promote the generation of hot electrons, and contribute to the photocurrent. As the C₁₄H₃₁O₃P-Ti₃C₂/Au Schottky junction photodetector possesses self-driven characteristics and simple fabrication process, it exhibits great potential applications in detecting weak light signals, such as in the fields of astronomy and biomedical science. The successful fabrication of this photodetector provides a new approach for designing and developing MXene-based near-infrared detectors, thus promoting further advancements in this field.

Keywords:

Authors and contacts

Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China

Corresponding author: Wang Rong-Ming, rmwang@ustb.edu.cn

Funds: Project supported by the Natural Science Foundation of Beijing, China (Grant No. 2212034) and the National Natural Science Foundation of China (Grant No. 51971025).

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References

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Cited By

图 1 (a) C₁₄H₃₁O₃P改性Ti₃C₂T_x的过程示意图; Ti₃AlC₂ MAX, Ti₃C₂T_x, C₁₄H₃₁O₃P-Ti₃C₂的XRD衍射图谱(b)及红外光谱(c)

Figure 1. (a) C₁₄H₃₁O₃P modification Ti₃C₂T_x process schematic diagram; XRD diffraction diagram (b) and infrared spectrum (c) of Ti₃AlC₂ MAX, Ti₃C₂T_x, C₁₄H₃₁O₃P-Ti₃C₂.

DownLoad: Full-Size Img PowerPoint

图 2 Ti₃C₂T_x, C₁₄H₃₁O₃P-Ti₃C₂的AFM表征(a), (b)和SEM表征(c), (d). C₁₄H₃₁O₃P-Ti₃C₂的XPS谱　(e)宽扫描; (f) Ti 2p的高分辨率; (g) O 1s区的高分辨率; (h) P 2p区的高分辨率

Figure 2. AFM characteristic (a), (b) and SEM characteristics (c), (d) of Ti₃C₂T_x and C₁₄H₃₁O₃P-Ti₃C₂. XPS spectra of C₁₄H₃₁O₃P-Ti₃C₂ nanosheets: (e) Wide scan; (f) high-resolution of Ti 2p region; (g) high-resolution of O 1s region; (h) high-resolution of P 2p region.

DownLoad: Full-Size Img PowerPoint

图 3 C₁₄H₃₁O₃P-Ti₃C₂/Au肖特基结器件　(a) I-V 特性曲线; (b)在808—1342 nm波长下的开关比I_on/I_off; (c)不同光功率密度下的光电流; (d)光响应度和比探测率; (e) I-t曲线; (f)响应时间和恢复时间

Figure 3. Schottky junction device of C₁₄H₃₁O₃P-Ti₃C₂/Au: (a) I-V characteristic curve; (b) switching ratio I_on/I_off at 808–1342 nm wavelength; (c) plots of photocurrent changes with different optical power densities; (d) light response and ratio detection rate; (e) I-t characteristic curve; (f) response time and recovery time.

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图 4 (a) C₁₄H₃₁O₃P-Ti₃C₂/Au光电探测器示意图; (b) 肖特基结的能带示意图

Figure 4. (a) Schematic diagram of C₁₄H₃₁O₃P-Ti₃C₂/Au photodetector; (b) schematic energy band diagram of the Schottky.

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表 1 不同光功率下的响应度、比探测率以及外量子效率

Table 1. Responsivity, specific detection rate, and external quantum efficiency at different light power.

${P/({\rm{m} }{\rm{W} }{\cdot}{\rm{c} }{\rm{m} } }^{-2})$	$ R/( $10^–1${\rm{A} }{\cdot}{ {\rm{W} } }^{-1}$)	$ {D}^{*}/( $10⁷$ {\rm{J}}{\rm{o}}{\rm{n}}{\rm{e}}{\rm{s}}) $	$ {\rm{E}}{\rm{Q}}{\rm{E}}/{\text{%}} $
9.2	2.8	4.3	32.75
25.2	2.0	3.1	23.62
44.9	1.8	2.6	20.44
111.5	1.0	1.3	11.80
178.3	0.86	1.4	10.00

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map

[1]	Tantum S L, Yu Y L, Collins L M 2008 IEEE Geosci. Remote Sens. Lett. 5 103 Google Scholar
[2]	Xu H H, Liu J, Zhang J, Zhou G D, Luo N Q, Zhao N 2017 Adv. Mater. 29 1700975 Google Scholar
[3]	Millan M S, Escofet J 2004 Opt. Lett. 29 1440 Google Scholar
[4]	Jonsson P, Casselgren J, Thornberg B 2015 IEEE Sens. J. 15 1641 Google Scholar
[5]	Homan K A, Souza M, Truby R, Luke G P, Green C, Vreeland E, Emelianov S 2012 ACS Nano 6 641 Google Scholar
[6]	Zeng L H, Lin S H, Li Z J, Zhang Z X, Zhang T F, Xie C, Mak C H, Chai Y, Lau S P, Luo L B, Tsang Y H 2018 Adv. Funct. Mater. 28 1705970 Google Scholar
[7]	Zhuo R R, Zeng L H, Yuan H Y, Wu D, Wang Y G, Shi Z F, Xu T T, Tian Y T, Li X J, Tsang Y H 2019 Nano Res. 12 183 Google Scholar
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[9]	Liu J L, Li X, Wang H, Yuan G, Suvorova A, Gain S, Ren Y L, Lei W 2020 ACS Appl. Mater. Interfaces 12 31810 Google Scholar
[10]	Chao J F, Xing S M, Liu Z D, Zhang X T, Zhao Y L, Zhao L H, Fan Q F 2018 Mater. Res. Bull. 98 194 Google Scholar
[11]	Marques-Hueso J, Jones T D A, Watson D E, Ryspayeva A, Esfahani M N, Shuttleworth M P, Harris R A, Kay R W, Desmulliez M P Y 2018 Adv. Funct. Mater. 28 1704451 Google Scholar
[12]	孙颖慧, 穆丛艳, 蒋文贵, 周亮, 王荣明 2022 71 066801 Google Scholar Sun Y H, Mu C Y, Jiang W G, Zhou L, Wang R M 2022 Acta Phys. Sin. 71 066801 Google Scholar
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[40]	李秀华, 张敏, 杨佳, 邢爽, 高悦, 李亚泽, 李思雨, 王崇杰 2022 71 048501 Google Scholar Li X H, Zhang M, Yang J, Xing S, Gao Y, Li Y Z, Li S Y, Wang C J 2022 Acta Phys. Sin. 71 048501 Google Scholar
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[44]	Sun M X, Yang P F, Xie D, Sun Y L, Xu J L, Ren T L, Zhang Y F 2019 Adv. Electron. Mater. 5 1800580 Google Scholar

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Vol. 72, Issue 13 - 2023-07-05

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Self-driven near infrared photoelectric detector based on C₁₄H₃₁O₃P-Ti₃C₂/Au Schottky junction

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Corresponding author: Wang Rong-Ming, rmwang@ustb.edu.cn

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