Synthesis of h-BN/diamond heterojunctions and its electrical characteristics

Jia Yan-Wei; He Jian; He Meng; Zhu Xiao-Hua; Zhao Shang-Man; Liu Jin-Long; Chen Liang-Xian; Wei Jun-Jun; Li Cheng-Ming

doi:10.7498/aps.71.20220995

Abstract

Conductive channel on the surface of hydrogen terminated diamond with two-dimensional h-BN passivation exhibits high hole mobility. However, the current h-BN passivated diamond mainly uses the method of mechanical peeling, which cannot achieve a large-size conductive channel and is difficult to meet the actual application requirements. In this study, the effect of classical transfer h-BN on the conductive channel on the surface of hydrogen terminated diamond is studied. High-quality single crystal diamond is epitaxially grown by microwave chemical vapor deposition (MPCVD) and the hydrogen terminated diamond is obtained by surface hydrogenation treatment. H-BN/H-diamond heterojunctions with different layers of h-BN are prepared by wetting transfer, and the characteristics of channel carrier transport are systematically studied. The results show that the channel conductivity is significantly enhanced after h-BN transfer, and with the increase of h-BN thickness, the enhancement effect of channel conductivity tends to be stable. The transfer of multilayer h-BN can increase the carrier density on the surface of hydrogen terminated diamond by nearly 2 times, and the square resistance is reduced to 50%. The current results show that the h-BN/H-diamond heterojunction may have a transfer doping effect, resulting in a significant increase in carrier density. With the increase of the channel carrier density, the channel mobility on the surface of the h-BN passivated diamond remains stable. The H-BN absorbs on the surface of the diamond, so that the negative charge originally on the surface of the hydrogen termination moves to the surface of h-BN, and the distance of action increases, weakening the coupling of the negative charge of the hole with the negative charge of the dielectric layer in the conductive channel of the hydrogen terminated diamond, which makes the mobility stable.

Keywords:

Authors and contacts

1.
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
2.
Graduate School University of Science and Technology Beijing, Foshan 528300, China

Corresponding author: Liu Jin-Long, liujinlong@ustb.edu.cn ; Li Cheng-Ming, chengmli@mater.ustb.edu.cn

Funds: Project supported by the National MCF Energy R & D Program, Cnina(Grant No. 2019YFE03100200), the Natural Science Foundation of Beijing, China (Grant No. 4192038), and the Nuclear Science Foundation of National Key Laboratory of Nuclear Detection and Nuclear Electronics of China (Grant No. SKLPDE-KF-202202).

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References

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Cited By

图 1 (a) 生长前衬底拉曼光谱图; (b) 生长后外延层拉曼光谱图; (c) 生长前衬底摇摆曲线; (d) 生长后外延层摇摆曲线; (e) 生长前衬底PL光谱; (f) 生长后外延层PL光谱

Figure 1. (a) Raman spectra of the substrate before growth; (b) raman spectra of the epitaxial layer after growth; (c) rocking curve of pre-growth substrate; (d) rocking curve of postgrowth epitaxial layer; (e) PL spectra of pre-growth substrate; (f) PL spectra of postgrowth epitaxial layer.

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图 2 (a) 表面氢化处理前金刚石精密抛光表面形貌; (b) 金刚石氢化处理后表面形貌

Figure 2. (a) Surface morphology of precision-polishing diamond before surface hydrogenation; (b) surface morphology of diamond after hydrogenation treatment.

DownLoad: Full-Size Img PowerPoint

图 3 氢终端金刚石导电性能随时间的变化　(a)方阻随时间的变化; (b)载流子密度随时间变化; (c)迁移率随时间变化

Figure 3. The conductivity of hydrogen terminated diamond changes over time: (a) The change of the square resistance over time; (b) carrier concentration over time; (c) mobility over time.

DownLoad: Full-Size Img PowerPoint

图 4 (a) h-BN/Si拉曼图谱; (b) 转移前后氢终端表面的XPS

Figure 4. (a) Raman spectra of h-BN/Si; (b) XPS of the hydrogen terminated surface before and after h-BN transfer.

DownLoad: Full-Size Img PowerPoint

图 5 不同厚度的h-BN转移后氢终端金刚石电学性能

Figure 5. Electrical properties of hydrogen terminated diamond after different-thickness h-BN transfer.

DownLoad: Full-Size Img PowerPoint

图 6 氢终端金刚石以及不同固体介质材料的电子亲和势

Figure 6. Schematic diagram of hydrogen terminated diamond and metal oxide.

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图 7 (a) h-BN/H-diamond的界面结构; (b) diamond晶体结构; (c) h-BN/H-diamond异质结示意图

Figure 7. (a) Interface structure of h-BN/H-diamond; (b) diamond crystal structure; (c) schematic diagram of h-BN/H-diamond heterojunction.

DownLoad: Full-Size Img PowerPoint

表 1 生长、氢化预处理、表面氢化工艺参数

Table 1. Growth, cleaning, and hydrogenation parameters.

工艺参数	温度/℃	功率/W	腔压/kPa	甲烷流量/%	氧气流量/%
生长	800—850	3800—3900	17—20	5	0.3
氢化预处理	800	1500—2000	10—12	—	—
表面氢化	700—750	1400—1600	3—5	—	—

DownLoad: CSV

表 2 多层h-BN转移前后(100)氢终端金刚石的电学性能(YW-0为PMMA空白对照试验; YW-1, YW-2, YW-3为多层h-BN转移前后的结果)

Table 2. Electrical properties of hydrogen terminated diamond before and after multilayer h-BN transfer (YW-0 is a PMMA blank control test; YW-1, YW-2, YW-3 are multilayer Results before and after h-BN transfer).

编号		方阻 /(10³ Ω·□^–1)	迁移率 /(cm²·V^–1·s^–1)	载流子密度 /(10¹² cm^–2)
YW-0	转移前	10.8	203.9	2.84
YW-0	转移后	10.6	198.5	2.96
YW-1	转移前	12.0	246.6	2.11
YW-1	转移后	5.98	248.4	4.20
YW-2	转移前	10.1	246.0	2.50
YW-2	转移后	5.48	195.6	5.83
YW-3	转移前	10.2	161.9	3.75
YW-3	转移后	4.88	145.1	8.81

DownLoad: CSV

map

[1]	Stenger I, Pinault Thaury M A, Kociniewski T, Lusson A, Chikoidze E, Jomard F, Dumont Y, Chevallier J, Barjon J 2013 J. Appl. Phys. 114 073711 Google Scholar
[2]	李成明, 任飞桐, 邵思武, 牟恋希, 张钦睿, 何健, 郑宇亭, 刘金龙, 魏俊俊, 陈良贤, 吕反修 2022 人工晶体学报 51 759 Google Scholar Li C M, Ren F T, Shao S W, Mou L X, Zhang Q R, He J, Zheng Y T, Liu J L, Wei J J, Chen L X, Lü F X 2022 J. Synth. Cryst. 51 759 Google Scholar
[3]	姜荣超, 雷雨, 李超群, 刘谷成, 周晓丹 2008 金刚石与磨料磨具工程 20 42 Google Scholar Jiang R C, Li C Q, Liu G C, Zhou X D 2008 Diamond Abras. Eng. 20 42 Google Scholar
[4]	Kubovic M, Kasu M, Kageshima H, Maeda F 2010 Diamond Relat. Mater. 19 889 Google Scholar
[5]	Geis M W, Fedynyshyn T H, Plaut M E, Wade T C, Wuorio C H, Vitale S A, Varghese J O, Grotjohn T A, Nemanich R J, Hollis M A 2018 Diamond Relat. Mater. 84 86 Google Scholar
[6]	Saha N C, Takahashi K, Imamura M, Kasu M 2020 J. Appl. Phys. 128 135702 Google Scholar
[7]	Sato H, Kasu M 2012 Diamond Relat. Mater. 24 99 Google Scholar
[8]	Daicho A, Saito T, Kurihara S, Hiraiwa A, Kawarada H 2014 J. Appl. Phys. 115 223711 Google Scholar
[9]	Geis M W, Varghese J O, Hollis M A, Nemanich R J, Zhang X, Turner G W, Warnock S M, Vitale S A, Osadchy T, Zhang B 2020 Diamond Relat. Mater. 106 107819 Google Scholar
[10]	Russell S A O, Cao L, Qi D, Tallaire A, Crawford K G, Wee A T S, Moran D A 2013 Appl. Phys. Lett. 103 202112 Google Scholar
[11]	Tordjman M, Saguy C, Bolker A, Kalish R 2014 Adv. Mater. 1 1300155 Google Scholar
[12]	Verona C, Ciccognani W, Colangeli S, Limiti E, Marco Marinelli G, Verona R 2016 J. Appl. Phys. 120 025104 Google Scholar
[13]	Tordjman M, Weinfeld K, Kalish R 2017 Appl. Phys. Lett. 111 111601 Google Scholar
[14]	Kevin G, Crawford, Liang C, Dongchen Q, Alexandre T, Limiti E, Verona C, Andrew T S W, David A J M 2016 Appl. Phys. Lett. 108 042103 Google Scholar
[15]	Hussain J, Abbasi H N, Wang W, Wang Y F, Wang H X 2020 AIP Adv. 10 035327 Google Scholar
[16]	邢雨菲, 任泽阳, 张金风, 苏凯, 丁森川, 何琦, 张进成, 张春福, 郝跃 2022 71 088102 Google Scholar Xing Y F, Ren Z Y, Zhang J F, Su K, Ding S C, He Q, Zhang J C, Zhang C F, Hao Y 2022 Acta Phys. Sin. 71 088102 Google Scholar
[17]	Ren Z, Zhang J, Zhang J, Zhang C, Chen D, Quan R, Yang J, Lin Z, Hao Y 2017 AIP Adv. 7 125302 Google Scholar
[18]	Imura, M, Banal R G, Liao M, Liu J, Aizawa T, Tanaka A 2017 J. Appl. Phys. 121 025702 Google Scholar
[19]	Liu J L, Zheng Y T, Lin L Z, Zhao Y, Chen L X, Wei J J 2018 J. Mater. Sci. 53 13030 Google Scholar
[20]	Liu J L, Yu H, Shao S W, Tu J P, Zhu X H, Yuan X L, Wei J J, Chen L X, Ye H T, Li C M 2020 Diamond Relat. Mater. 104 107750 Google Scholar
[21]	Sasama Y, Komatsu K, Moriyama S, Imura M, Takahide Y 2018 APL Mater. 6 111105 Google Scholar
[22]	Sasama Y, Kageura T, Imura M, Watanabe K, Taniguchi T, Uchihashi T, Takahide Y 2022 Nat. Eletronics 5 37
[23]	Su J, Li Y, Li X, Yao P, Tang W 2014 Diamond Relat. Mater. 42 28 Google Scholar
[24]	安康, 刘金龙, 林亮珍, 张博弈, 赵云, 郭彦召, Tomasz O, 陈良贤, 魏俊俊, 李成明 2018 表面技术 47 11 An K, Liu J L, Lin L Z, Zhang B Y, Zhao Y, Guo Y Z, Tomasz O, Chen L X, Wei J J, Li C M 2018 Surf. Technol. 47 11
[25]	Lindblom J 2005 Am. Mineral 90 428 Google Scholar
[26]	Crawford, Kevin G, Tallaire, Alexandre X, Macdonald, David A, Dongchen M, David A J 2018 Diamond Relat. Mater. 84 48 Google Scholar
[27]	Geis M W, Varghese J O, Vardi A, Kedzierski J, Zhang B 2021 Diamond Relat. Mater. 118 108518 Google Scholar
[28]	Tang S, Liu H, Tian Y, Chen D, Zhou J 2021 Spectrochim. Acta, Part A 262 120092 Google Scholar
[29]	Xing K, Xiang Y, Jiang, M, Creedon, D L, Qi D C 2020 Appl. Surf. Sci. 509 144890 Google Scholar
[30]	Verona C, Arciprete F, Foffi M, Limiti E, Marinelli M, Placidi E 2018 Appl. Phys. Lett. 112 180602 Google Scholar
[31]	Ogawa S, Yamada T, Kadowaki R, Taniguchi T, Abukawa T, Takakuwa Y 2019 J. Appl. Phys. 125 144303 Google Scholar
[32]	Mirabedini P S, Debnath B, Neupane M R, Greaney P A, Ivanov T G 2020 Appl. Phys. Lett. 117 121901 Google Scholar
[33]	Gorbachev R V, Riaz I, Nair R, Jalil R, Britnell L, Belle B D, Hill E W, Novoselov K S, Watanabe K, Taniguchi T, Geim A K, Blake P 2011 Small 7 465 Google Scholar
[34]	Verona C, Ciccognani W, Colangeli S, Limiti E, Marinelli M, Verona R G 2016 J. Appl. Phy. 120 025104
[35]	Li Y, Zhang J, Liu G, Ren Z, Zhang J, Hao Y 2018 Phys. Status Solidi RRL. 12 1700401 Google Scholar

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