Artificial synapses based on layered multi-component metal oxides

Liu Qiang; Ni Yao; Liu Lu; Sun Lin; Liu Jia-Qi; Xu Wen-Tao

doi:10.7498/aps.71.20220303

Abstract

Neuromorphic electronics has received considerable attention recent years, and its basic functional units are synaptic electronic devices. A two-terminal artificial synapse with sandwiched structure emulates plasticity of the biological synapses under the action of nerve-like electrical impulse signals. In this paper, P3 phase Na_2/3Ni_1/3Mn_2/3O₂ multi-element metal oxides with layered structure are synthesized by sol-gel process. Owing to the fact that Na⁺ is easy to embed/eject into its crystal structure, an ion-migrating artificial synapse based on Na_2/3Ni_1/3Mn_2/3O₂ is designed and fabricated. The device emulates important synaptic plasticity, such as excitatory postsynaptic current, paired-pulse facilitation, spike-number dependent plasticity, spike-frequency dependent plasticity, spike-voltage amplitude dependent plasticity and spike-duration dependent plasticity. The device realizes the identification and response to Morse code commands.

Keywords:

Authors and contacts

Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, China

Corresponding author: Xu Wen-Tao, wentao@nankai.edu.cn

Funds: Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No. T2125005), the Tianjin Science Foundation for Distinguished Young Scholars, China (Grant No. 19JCJQJC61000), and the Shenzhen Science and Technology Project, China (Grant No. JCYJ20210324121002008).

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References

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Cited By

图 1 (a) 生物神经元及突触结构示意图; (b) 人工突触电子器件结构示意图; (c) P3相Na_2/3Ni_1/3Mn_2/3O₂结构示意图

Figure 1. (a) Schematic diagram of biological neuron and synapse structure; (b) schematic diagram of artificial synaptic electronic device structure; (c) schematic diagram of the structure of P3 phase Na_2/3Ni_1/3Mn_2/3O₂.

DownLoad: Full-Size Img PowerPoint

图 2 (a) Na_2/3Ni_1/3Mn_2/3O₂粉末X射线衍射测试图; (b) Na_2/3Ni_1/3Mn_2/3O₂粉末扫描电子显微镜测试图; (c) Na_2/3Ni_1/3Mn_2/3O₂粉末X射线能谱分析图; (d) Na_2/3Ni_1/3Mn_2/3O₂活性层扫描电子显微镜表面形貌测试图; (e) 底电极铝箔、Na_2/3Ni_1/3Mn_2/3O₂活性层与PEO-Na电解质薄层扫描电子显微镜断面形貌测试图; (f) Na_2/3Ni_1/3Mn_2/3O₂活性层原子力显微镜测试图

Figure 2. (a) X-ray diffraction test diagram of Na_2/3Ni_1/3Mn_2/3O₂ powder; (b) scanning electron microscope test diagram of Na_2/3Ni_1/3Mn_2/3O₂ powder; (c) EDS test diagram of Na_2/3Ni_1/3Mn_2/3O₂ powder; (d) surface topography test diagram of Na_2/3Ni_1/3Mn_2/3O₂ active layer scanning electron microscope ; (e) bottom electrode Al foil, Na_2/3Ni_1/3Mn_2/3O₂ active layer and PEO-Na electrolyte thin layer scanning electron microscope cross-sectional morphology test diagram; (f) atom force microscope test diagram of Na_2/3Ni_1/3Mn_2/3O₂ active layer.

DownLoad: Full-Size Img PowerPoint

图 3 (a) 单次阻变特性测试; (b) 连续50次阻变特性稳定能力测试; (c) 对器件施加单个幅值为0.2 V的电脉冲信号所产生的EPSC; (d) 对器件连续施加两个幅值为0.2 V的电脉冲信号所产生的PPF; 对器件施加多对时间间隔不同幅值为0.2 V的电脉冲信号所产生的(e) PPF以及(f) PPF指数

Figure 3. (a) Single resistance characteristic test; (b) 50 consecutive tests of resistance characteristic stability; (c) EPSC generated by applying a single electrical pulse signal with an amplitude of 0.2 V to the device; (d) PPF generated by continuously applying two electrical pulse signals with an amplitude of 0.2 V to the device; (e) PPF and (f) PPF index generated by applying multiple pairs of electrical pulse signals with different amplitudes of 0.2 V to the device.

DownLoad: Full-Size Img PowerPoint

图 4 对器件连续施加10个幅值为0.2 V的电脉冲信号所产生的 (a) SNDP以及(b) SNDP 指数; (c) 对器件施加幅值从0 V—4 V—0 V变化的10组电脉冲信号循环所产生的SVDP; 对器件施加多个脉冲宽度不同幅值为0.2 V的电脉冲信号所产生的(d) SDDP以及(e) SDDP 指数; (f) 对器件连续施加多组频率不同幅值为0.2 V的电脉冲信号所产生的SFDP

Figure 4. (a) SNDP and (b) SNDP index generated by continuously applying 10 electrical pulse signals with an amplitude of 0.2 V to the device; (c) 10 groups of amplitudes varying from 0 V to 4 V to 0 V are applied to the device SVDP generated by electrical pulse signal cycle; (d) SDDP and (e) SDDP index generated by applying multiple electrical pulse signals with different pulse widths and amplitudes of 0.2 V to the device; (f) SFDP generated by continuously applying multiple groups of electrical pulse signals with the different frequencies and amplitudes of 0.2 V to the device.

DownLoad: Full-Size Img PowerPoint

图 5 对器件施加内容为Na_2/3 (a), Ni_1/3 (b), Mn_2/3 (c), O₂ (d)的摩斯电码制式的电脉冲信号所产生的突触后电流响应

Figure 5. Post-synaptic current response generated by applying Morse code electrical pulse signals with content of (a) Na_2/3, (b) Ni_1/3, (c) Mn_2/3, (d) O₂ to the device.

DownLoad: Full-Size Img PowerPoint

map

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