一种改进的WOx忆阻器模型及其突触特性分析

孟凡一; 段书凯; 王丽丹; 胡小方; 董哲康

doi:10.7498/aps.64.148501

摘要

忆阻器被定义为第四种基本电子元器件, 其模型的研究呈现多样性. 目前, 忆阻器模型与忆阻器实际特性的切合程度引起了研究者的广泛关注. 通过改变离子扩散项, 提出了一种新的WOx忆阻器模型, 更好地匹配了忆阻器的实际行为特性. 首先, 新的模型不仅能够描述忆阻器的一般特性, 而且能够俘获记忆丢失行为. 另外, 将新的忆阻器作为神经突触, 分析了脉冲速率依赖可塑性、短期可塑性、长期可塑性, 并发现了与生物系统中极为相似的“经验学习”现象. 最后, 考虑到温度与离子扩散系数的关系, 探讨了温度对突触权值弛豫过程的影响. 实验表明, 新忆阻器模型比原来的模型更切合实际, 且更适合作为突触而应用到神经形态系统之中.

关键词:

Abstract

Memristor is defined as the fourth basic electronic element, the studies on its models exhibit diversity. Now, the matching extent between memristor model and natural memristor has received researchers' wide attention. A new memristor model is proposed by changing the ion diffusion term of the WOx memristor, namely, adding another two internal state variables τ and μ which denote the relaxation time and retention, respectively, and the improved model can simulate natural memristor better. Firstly, the new one is able to not only describe the general characteristics of a memrsitor, but also capture the memory loss behavior. In addition, the new memristor can be considered as a neural synapse, under the action of the input pulses with different amplitudes, duration and intervals, the spike rate dependent plasticity, short-term plasticity (STP), and long-term plasticity (LTP) are analyzed, and the ''learning experience'' phenomenon which is very similar to the biological system is discovered, most of which is due to the back diffusion of the oxygen vacancies during the intervals of the input pulses which are caused by the concentration difference. Moreover, an exponential decay equation is built to describe the relaxation process of STP. Finally, taking into consideration the relationship between temperature and ion diffusion coefficient, the effect of temperature on the relaxation process of STP is discussed. Experimental results show that the new memristor model can better match the actual behavior characteristics, and more suitably acts as a synapse for being applied to neuromorphic systems.

Keywords:

作者及机构信息

1.
西南大学电子信息工程学院, 重庆 400715;

2.
香港城市大学机械与生物医学工程系, 香港 999077

基金项目: 教育部新世纪优秀人才支持计划(批准号: 教技函[2013] 47号)、国家自然科学基金(批准号: 61372139, 61101233, 60972155)、教育部“春晖计划” 科研项目(批准号: z2011148)、留学人员科技活动项目(批准号: 渝人社办[2012] 186 号)、重庆市高等学校优秀人才支持计划(批准号: 渝教人[2011] 65号)、重庆市高等学校青年骨干教师资助计划(批准号: 渝教人[2011]65号)和中央高校基本科研业务费(批准号: XDJK2014A009, XDJK2013B011)资助的课题.

Authors and contacts

1.
School of Electronics and Information Engineering, Southwest University, Chongqing 400715, China;

2.
Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Hong Kong 999077, China

Funds: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. [2013]47), the National Natural Science Foundation of China (Grant Nos. 61372139, 61101233, 60972155), the "Spring Sunshine Plan" Research Project of Ministry of Education of China (Grant No. z2011148), the Technology Foundation for Selected Overseas Chinese Scholars, Ministry of Personnel in China (Grant No. [2012]186), the University Excellent Talents Supporting Foundation of Chongqing, China (Grant No. [2011]65), the University Key Teacher Supporting Foundation of Chongqing, China (Grant No. [2011]65), and the Fundamental Research Fund for the Central Universities, China (Grant Nos. XDJK2014A009, XDJK2013B011).

参考文献

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[15]	Tian X B, Xu H 2013 Chin. Phys. B 22 088501
[16]	Tian X B, Xu H 2014 Chin. Phys. B 23 068401
[17]	Xu H, Tian X B, Bu K, Li Q J 2014 Acta Phys. Sin. 63 098402 (in Chinese) [徐晖, 田晓波, 步凯, 李清江 2014 63 098402]
[18]	Tian X B, Xu H, Li Q J 2014 Acta Phys. Sin. 63 048401 (in Chinese) [田晓波, 徐晖, 李清江 2014 63 048401]
[19]	Chen L, Li C D, Huang T W, Ahmad H G, Chen Y R 2014 Phys. Lett. A 378 2924
[20]	Chang T, Jo S H, Kim K H, Sheridan P, Gaba S, Lu W 2011 Appl. Phys. A 102 857
[21]	Chang T, Jo S H, Lu W 2011 ACS Nano 5 7669
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[23]	Wang Z Q, Xu H Y, Li X H, Yu H, Liu Y C, Zhu X J 2012 Adv. Funct. Mater. 22 2759
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[25]	So H S, Choi S H, Seo K S, Seo C S, So S Y 2014 KSCE J. Civ. Eng. 18 2227

施引文献

[1]	Chua L O 1971 IEEE Trans. Circ. Th. 18 507
[2]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[3]	Biolek Z, Biolek D, Biolková V 2009 Radioengineering 18 210
[4]	Chen Y R, Wang X B 2009 IEEE/ACM International Symposium on Nanoscale Architectures, San Francisco, CA USA, July 30-31, 2009 p7
[5]	Wu H G, Bao B C, Chen M 2014 Chin. Phys. B 23 118401
[6]	Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870
[7]	Duan S K, Hu X F, Wang L D, Li C D, Mazumder P 2012 Sci. China: Inf. Sci. 55 1446
[8]	Yener S C, Kuntman H H 2014 Radioengineering 23 1140
[9]	Dong Z K, Duan S K, Hu X F, Wang L D, Li H 2014 Sci. World J. 2014 394828
[10]	Cantley K D, Subramaniam A, Stiegler H J, Chapman R A, Vogel E M 2011 IEEE Trans. Nanotechnol. 10 1066
[11]	Adhikari S P, Yang C J, Kim H, Chua L O 2012 IEEE Trans. Neural Networks and Learning Systems 23 1426
[12]	Hu X F, Duan S K, Wang L D, Liao X F 2011 Sci. China: Inf. Sci. 41 500 (in Chinese) [胡小方, 段书凯, 王丽丹, 廖晓峰 2011 中国科学:信息科学 41 500]
[13]	Afifi A, Ayatollahi A, Raissi F 2009 IEEE Circuit Theory and Design Antalya, August 23-27, 2009 p563
[14]	Dong Z K, Duan S K, Hu X F, Wang L D 2014 Acta Phys. Sin. 63 128502 (in Chinese) [董哲康, 段书凯, 胡小方, 王丽丹 2014 63 128502]
[15]	Tian X B, Xu H 2013 Chin. Phys. B 22 088501
[16]	Tian X B, Xu H 2014 Chin. Phys. B 23 068401
[17]	Xu H, Tian X B, Bu K, Li Q J 2014 Acta Phys. Sin. 63 098402 (in Chinese) [徐晖, 田晓波, 步凯, 李清江 2014 63 098402]
[18]	Tian X B, Xu H, Li Q J 2014 Acta Phys. Sin. 63 048401 (in Chinese) [田晓波, 徐晖, 李清江 2014 63 048401]
[19]	Chen L, Li C D, Huang T W, Ahmad H G, Chen Y R 2014 Phys. Lett. A 378 2924
[20]	Chang T, Jo S H, Kim K H, Sheridan P, Gaba S, Lu W 2011 Appl. Phys. A 102 857
[21]	Chang T, Jo S H, Lu W 2011 ACS Nano 5 7669
[22]	Ohno T, Hasegawa T, Tsuruoka T, Terabe K, Gimzewski J K, Aono M 2011 Nat. Mater. 10 591
[23]	Wang Z Q, Xu H Y, Li X H, Yu H, Liu Y C, Zhu X J 2012 Adv. Funct. Mater. 22 2759
[24]	Bhagya V, Srikumar B N, Raju T R, Shankaranarayana Rao B S 2015 J. Neurosci. Res. 93 104
[25]	So H S, Choi S H, Seo K S, Seo C S, So S Y 2014 KSCE J. Civ. Eng. 18 2227

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