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中国物理学会期刊
Deng Wen, Wang Li-Sheng, Liu Jia-Ning, Yu Xue-Ling, Chen Feng-Xiang. Resistive switching behavior and mechanism of multilayer MoS2 memtransistor under control of back gate bias and light illuminationJ. Acta Physica Sinica, 2021, 70(21): 217302. DOI: 10.7498/aps.70.20210750
Citation: Deng Wen, Wang Li-Sheng, Liu Jia-Ning, Yu Xue-Ling, Chen Feng-Xiang. Resistive switching behavior and mechanism of multilayer MoS2 memtransistor under control of back gate bias and light illuminationJ. Acta Physica Sinica, 2021, 70(21): 217302. DOI: 10.7498/aps.70.20210750

    Resistive switching behavior and mechanism of multilayer MoS2memtransistor under control of back gate bias and light illumination

    CSTR: 32037.14.aps.70.20210750
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