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The conduction of nano-scale titanium oxide memristor exhibits complex characteristics, owing to the change of self-parameters and the coexistence of different conductive mechanisms. However, there has been no detailed discussion about the influence of the cross section area change on the conductive characteristics of memristor. Based on dopant drift and tunnel barrier mechanisms, the conductive process of memristor is analysed, and the relevance between cross section area and key physical factors of the conductive process is studied, then the influences of the changes of titanium oxide and tunnel barrier cross section area on conductive characteristics of memristors are studied, respectively. The differences and connections between the two cases are analysed. In the case of the coexistence of those two mechanisms, compared with the change of titanium oxide cross section area, the change of tunnel barrier cross section area is proved to be the chief factor which causes changes of memristor conductive characteristics, it is also a possible factor causing the change of non-ideal conductive characteristics of memristor. The research results contribute to further explaining the complexity of memristor conductions and providing basis for optimizing memristor modeling.
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Keywords:
- memristor /
- cross section area /
- dopant drift /
- tunnel barrier
[1] Tian X B, Xu H 2013 Chin. Phys. B 22 088501
[2] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[3] Chua L O, Kang S M 1976 Proc. IEEE 64 209
[4] Fang X D, Tang Y H, Wu J J 2012 Chin. Phys. B 21 098901
[5] Kim H, Sah M P, Yang C, Roska T, Chua L O 2011 IEEE Trans. Circuits Syst. I Reg. Papers 59 148
[6] Raja T, Mourad S 2009 International Conference on Communications, Circuits and Systems, California, July 23-25, 2009, p939
[7] Bao B C, Hu W, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡文, 许建平, 刘中, 邹凌 2011 60 120502]
[8] Bao B C, Liu Z, Xu J P 2010 Acta Phys. Sin. 59 3785 (in Chinese) [包伯成, 刘中, 许建平 2010 59 3785]
[9] Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510
[10] Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 096401 (in Chinese) [李智炜, 刘海军, 徐欣 2013 62 096401]
[11] Song D H, L M F, Ren X, Li M M, Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese) [宋德华, 吕梦菲, 任翔, 李萌萌, 俎云霄 2012 61 118101]
[12] Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[13] Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R, Williams R S 2008 Nature Nanotech. 3 429
[14] Stewart D R, Ohlberg D A A, Beck P A, Chen Y, Williams R S 2004 Nano Lett. 4 133
[15] Pickett M D, Strukov D B, Borghetti J L, Yang J J, Snider G S, Stewart D R, Williams R S 2009 J. Appl. Phys. 106 074508
[16] Yang J J, Miao F, Pickett M D, Ohlberg D A A, Stewart D R, Lau C N, Williams R S 2009 Nanotechnology 20 215201
[17] Tian X B, Xu H, Li Q J 2013 Chin. Phys. B 22 088502
[18] Prodromakis T, Michelakis K, Toumazou C 2010 Electron. Lett. 46 63
[19] Zhou J, Huang D 2012 Chin. Phys. B 21 048401
[20] Abdalla H, Pickett M D 2011 International Symposium on Circuits and Systems Brazil, May 15-18, 2011 p1832
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[1] Tian X B, Xu H 2013 Chin. Phys. B 22 088501
[2] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[3] Chua L O, Kang S M 1976 Proc. IEEE 64 209
[4] Fang X D, Tang Y H, Wu J J 2012 Chin. Phys. B 21 098901
[5] Kim H, Sah M P, Yang C, Roska T, Chua L O 2011 IEEE Trans. Circuits Syst. I Reg. Papers 59 148
[6] Raja T, Mourad S 2009 International Conference on Communications, Circuits and Systems, California, July 23-25, 2009, p939
[7] Bao B C, Hu W, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡文, 许建平, 刘中, 邹凌 2011 60 120502]
[8] Bao B C, Liu Z, Xu J P 2010 Acta Phys. Sin. 59 3785 (in Chinese) [包伯成, 刘中, 许建平 2010 59 3785]
[9] Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510
[10] Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 096401 (in Chinese) [李智炜, 刘海军, 徐欣 2013 62 096401]
[11] Song D H, L M F, Ren X, Li M M, Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese) [宋德华, 吕梦菲, 任翔, 李萌萌, 俎云霄 2012 61 118101]
[12] Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[13] Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R, Williams R S 2008 Nature Nanotech. 3 429
[14] Stewart D R, Ohlberg D A A, Beck P A, Chen Y, Williams R S 2004 Nano Lett. 4 133
[15] Pickett M D, Strukov D B, Borghetti J L, Yang J J, Snider G S, Stewart D R, Williams R S 2009 J. Appl. Phys. 106 074508
[16] Yang J J, Miao F, Pickett M D, Ohlberg D A A, Stewart D R, Lau C N, Williams R S 2009 Nanotechnology 20 215201
[17] Tian X B, Xu H, Li Q J 2013 Chin. Phys. B 22 088502
[18] Prodromakis T, Michelakis K, Toumazou C 2010 Electron. Lett. 46 63
[19] Zhou J, Huang D 2012 Chin. Phys. B 21 048401
[20] Abdalla H, Pickett M D 2011 International Symposium on Circuits and Systems Brazil, May 15-18, 2011 p1832
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