Research progress of metal-insulator phase transition in VO<sub>2</sub> induced by electric field

Sun Xiao-Ning; Qu Zhao-Ming; Wang Qing-Guo; Yuan Yang; Liu Shang-He

doi:10.7498/aps.68.20190136

Abstract

Vanadium dioxide (VO₂) is a typical representative of strongly correlated electronic systems, which undergoes a reversible transition from the insulator phase to metal phase, induced by a certain threshold for each of temperature, electric field, illumination and pressure. The crystal structure of VO₂ will undergo a reversible transition from monoclinic structure to tetragonal rutile structure when the phase transition happens, which is considered as the microscopic mechanism of VO₂ metal-insulator transition (MIT). The conductivity of VO₂ can be increased by 2—5 orders of magnitude when the MIT is induced by electric field, which makes VO₂ possess good application prospects in the fields of restructurable slot antenna, terahertz radiation, intelligent electromagnetic protection materials, etc. Therefore, the reversible metal-insulator phase transition in VO₂, induced by electric field, has long been a research hotspot, which however, has been seldom reported. Firstly, in this paper, the changes of the crystal structure and energy band structure of VO₂ during MIT are introduced briefly. The methods of regulating the phase transition are given, including temperature control, bandwidth and band-filling control. Then, the important discovery and research progress of VO₂ MIT induced by electric field based on the research method, response time, critical threshold field and phase transition mechanism are summarized and reviewed comprehensively. The method of studying the VO₂ phase transition relates to its structure, including planar structure, three-terminal gated ?eld effect switch and sandwiched layer structure. The sandwich layer structure is more suitable for investigating the MIT characteristics of VO₂ in experimental stage because of its structural advantage of preparation and test. The response time of VO₂ MIT can be completed in nanoseconds, of which the substantial parameter has been revealed by many reports, also including the excellent reversibility of VO₂ MIT. The MIT critical threshold field of the VO₂ film can be tuned by element doping, coexistence of multivalent vanadium oxides and multiple physical field synergism effectively. The MIT mechanism of VO₂ induced by electric field has been proposed so far, which includes joule heating mechanism and pure electric field mechanism, and the latter is considered to be more likely to give a reasonable explanation. Finally, in the paper the current problems of the VO₂ MIT research and the near-future development direction of the VO₂ MIT materials are also pointed out.

Keywords:

Authors and contacts

National Key Laboratory on Electromagnetic Environment Effects, Army Engineering University, Shijiazhuang 050003, China

Corresponding author: Qu Zhao-Ming, iamqzm3990@163.com ; Liu Shang-He, liushh@cae.cn

Funds: Project supported by the Foundation of National Key Laboratory on Electromagnetic Environment Effects, China (Grant No. 614220504030617).

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References

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Cited By

图 1 VO₂晶体结构图^[32]　(a) M相; (b) R相

Figure 1. Crystal structure of VO₂: (a) M phase; (b) R phase.

DownLoad: Full-Size Img PowerPoint

图 2 电场作用下VO₂薄膜中的电流变化曲线^[8]

Figure 2. Changes of currents by application ofthe electric field to VO₂ thin films^[8].

DownLoad: Full-Size Img PowerPoint

图 3 VO₂器件结构示意图　(a)平面结构^[36]; (b)三端场效应管结构^[7]; (c)三明治结构^[45]

Figure 3. Diagram of VO₂ device structure: (a) Planar structure^[36]; (b) three-terminal gated field effect switches^[7]; (c) layered structure^[45].

DownLoad: Full-Size Img PowerPoint

图 4 量子阱结构示意图(内嵌图为量子阱结构的电容器件模型^[46]

Figure 4. Schematic of quantum well structure (inset shows a capacitance device model for the quantum well structure)^[46].

DownLoad: Full-Size Img PowerPoint

图 5 短脉冲响应曲线^[36]

Figure 5. Response curve of short pulse^[36].

DownLoad: Full-Size Img PowerPoint

图 6 (a) Sawyer-Tower测试电路; (b)方波脉冲电压与峰值电流关系图(内嵌图为加载7 V和10 V开关电压时的电压和电流曲线)^[47]

Figure 6. (a) Sawyer-Tower test circuit; (b) peak current as a function of square wave pulse voltage (the inset illustrates voltage and current curves using applied switching pulses of 7 V and 10 V)^[47].

DownLoad: Full-Size Img PowerPoint

图 7 VO₂薄膜温度调控相变电场曲线图(电极间距5 mm)^[60]

Figure 7. MIT electric field curve controlled by temperature for VO₂ thin film (the electrode spacing is 5 mm) ^[60].

DownLoad: Full-Size Img PowerPoint

图 8 电场强度调控相变温度的关系图^[60]

Figure 8. MIT temperature curve controlled by electric field intensity^[60].

DownLoad: Full-Size Img PowerPoint

图 9 (a) VO₂纳米纤维; (b)测试器件; (c)温度响应曲线^[64]

Figure 9. (a) VO₂ nanofibers; (b) test device; (c) curve of temperature response.^[64]

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map

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Research progress of metal-insulator phase transition in VO₂ induced by electric field

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Research progress of metal-insulator phase transition in VO₂ induced by electric field