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A sort of homemade buried scientific charge-coupled device (CCD) is injected by 10 MeV protons, and measurements are carried out primarily on change of dark signal, charge transfer efficiency. Results show that parameters of CCD presented significantly decrease. Post-irradiation annealing is implemented and the results revel that CCD parameters recover to different extents. In this paper, analysed are the mechanism for the decrease of CCD parameters, and their dependences on process and structure in manufacture. The results above will provide helpful reference in characterization evaluation and technique development of future CCD.
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Keywords:
- charge-coupled devices /
- proton irradiation /
- total ionizing dose /
- department damage
[1] Chugg A M, Jones R, Moutrie M J, Truscott P R 2004 IEEE Trans. Nucl. Sci. 51 3579
[2] Meidinger N, Struder L, Holl P, Soltau H, Zanthier C V 1996 Nucl. Instrum. Methods Phys. Res. A 377 298
[3] Bebek C J, Groom D E, Holland S E, Karcher A, Kolbe W F, Palaio N P, Turko B T, Wang G 2004 Astropartical, Partical and Space Physics, Detectors and Medical Physics Applications 608B
[4] Jin J, Wang X Q, Lin S, Song N F 2012 Chin. Phys. B 21 094220
[5] Liu C M, Li X J, Geng H B, Rui E M, Guo L X, Yang J Q 2012 Chin. Phys. B 21 104211
[6] Hopkinson G R, Dale C J, Marshall P W 1996 IEEE Trans. Nucl. Sci. 43 614
[7] Wang Z J, Liu Y N, Chen W, Tang B Q, Xiao Z G, Liu M B, Huang S Y, Zhang Y 2010 J. Tsinghua Univ. (Science and Technology) 50 1484 (in Chinese) [王祖军, 刘以农, 陈伟, 唐本奇, 肖志刚, 刘敏波, 黄绍艳, 张勇 2010 清华大学学报 (自然科学版) 50 1484]
[8] Li P W, Guo Q, Ren D Y, Yu Y, Wang Y Y, Gao B 2010 Atom. Energy Sci. Technol. 44 124 (in Chinese) [李鹏伟, 郭旗, 任迪远, 于跃, 王义元, 高博 2010 原子能科学技术 44 124]
[9] Li P W, Guo Q, Ren D Y, Yu Y, Lan B, Li M S 2010 Atom. Energy Sci. Technol. 44 603 (in Chinese) [李鹏伟, 郭旗, 任迪远, 于跃, 兰博, 李茂顺 2010 原子能科学技术 44 603]
[10] Schrimpf R D, Fleedwood D M 2004 Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices (Singapore: World Scientific Publishing Co. Pte. Ltd.) pp135-144
[11] Killiany J M 1978 IEEE Trans. Nucl. Sci. 1 353
[12] Sun P, Du L, Chen W H, He L, Zhang X F 2012 Acta Phys. Sin. 61 107803 (in Chinese) [孙鹏, 杜磊, 陈文豪, 何亮, 张晓芳 2012 61 107803]
[13] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华, 杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 58 4090]
[14] Hopkinson G R, Mohammadzadeh 2004 Int. J. High Speed Electron. Syst. 14 419
[15] Wood S 1981 IEEE Trans. Nucl. Sci. 28 4107
[16] Mohsen A M, Tompsett M F 1974 IEEE Tran. Electron Dev. 21 701
[17] Bi J S, Han Z S, Zhang E X, McCurdy M, Reed R A, Schrimpf R D, Fleetwood D M, Alles M L, Weller R A, Linten D, Jurczak M, Fantini A 2013 IEEE Tran. Electron Dev. 60 4540
[18] Greenlee J D, Shank J C, Compagnoni J L, Tellekamp M B, Zhang E X, Bi J S, Fleetwood D M, Alles M L, Schrimpf R D, Doolittle W A 1974 IEEE Tran. Electron Dev. 60 4555
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[1] Chugg A M, Jones R, Moutrie M J, Truscott P R 2004 IEEE Trans. Nucl. Sci. 51 3579
[2] Meidinger N, Struder L, Holl P, Soltau H, Zanthier C V 1996 Nucl. Instrum. Methods Phys. Res. A 377 298
[3] Bebek C J, Groom D E, Holland S E, Karcher A, Kolbe W F, Palaio N P, Turko B T, Wang G 2004 Astropartical, Partical and Space Physics, Detectors and Medical Physics Applications 608B
[4] Jin J, Wang X Q, Lin S, Song N F 2012 Chin. Phys. B 21 094220
[5] Liu C M, Li X J, Geng H B, Rui E M, Guo L X, Yang J Q 2012 Chin. Phys. B 21 104211
[6] Hopkinson G R, Dale C J, Marshall P W 1996 IEEE Trans. Nucl. Sci. 43 614
[7] Wang Z J, Liu Y N, Chen W, Tang B Q, Xiao Z G, Liu M B, Huang S Y, Zhang Y 2010 J. Tsinghua Univ. (Science and Technology) 50 1484 (in Chinese) [王祖军, 刘以农, 陈伟, 唐本奇, 肖志刚, 刘敏波, 黄绍艳, 张勇 2010 清华大学学报 (自然科学版) 50 1484]
[8] Li P W, Guo Q, Ren D Y, Yu Y, Wang Y Y, Gao B 2010 Atom. Energy Sci. Technol. 44 124 (in Chinese) [李鹏伟, 郭旗, 任迪远, 于跃, 王义元, 高博 2010 原子能科学技术 44 124]
[9] Li P W, Guo Q, Ren D Y, Yu Y, Lan B, Li M S 2010 Atom. Energy Sci. Technol. 44 603 (in Chinese) [李鹏伟, 郭旗, 任迪远, 于跃, 兰博, 李茂顺 2010 原子能科学技术 44 603]
[10] Schrimpf R D, Fleedwood D M 2004 Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices (Singapore: World Scientific Publishing Co. Pte. Ltd.) pp135-144
[11] Killiany J M 1978 IEEE Trans. Nucl. Sci. 1 353
[12] Sun P, Du L, Chen W H, He L, Zhang X F 2012 Acta Phys. Sin. 61 107803 (in Chinese) [孙鹏, 杜磊, 陈文豪, 何亮, 张晓芳 2012 61 107803]
[13] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华, 杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 58 4090]
[14] Hopkinson G R, Mohammadzadeh 2004 Int. J. High Speed Electron. Syst. 14 419
[15] Wood S 1981 IEEE Trans. Nucl. Sci. 28 4107
[16] Mohsen A M, Tompsett M F 1974 IEEE Tran. Electron Dev. 21 701
[17] Bi J S, Han Z S, Zhang E X, McCurdy M, Reed R A, Schrimpf R D, Fleetwood D M, Alles M L, Weller R A, Linten D, Jurczak M, Fantini A 2013 IEEE Tran. Electron Dev. 60 4540
[18] Greenlee J D, Shank J C, Compagnoni J L, Tellekamp M B, Zhang E X, Bi J S, Fleetwood D M, Alles M L, Schrimpf R D, Doolittle W A 1974 IEEE Tran. Electron Dev. 60 4555
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