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大面阵、高分辨率碲镉汞红外焦平面阵列图像传感器可用于航天遥感、高精度卫星成像等领域, 我国下一代气象卫星将全部应用此类图像传感器. 然而, 空间高能质子会对碲镉汞红外焦平面阵列探测器造成位移损伤效应, 同时亦会在其像素单元金属氧化物半导体(MOS)管引入电离总剂量效应. 本文以近年来广泛应用于图像传感器的55 nm制造工艺碲镉汞红外焦平面阵列图像传感器为对象, 基于超大面阵设计时所用的2 pixel×2 pixel基本像素单元, 构建了Geant4仿真模型, 并且进行了不同质子入射注量下的仿真研究, 获得了不同注量下的位移损伤情况, 包括非电离能量损失、离位原子数等. 结果表明, 空间高能质子累积注量为1013 cm–2时, 除了考虑碲镉汞红外焦平面阵列图像传感器位移损伤效应外, 亦需关注其像素单元MOS管电离总剂量效应. 与此同时, 结合仿真结果对其空间应用环境中的损伤情况进行了初步评估. 该研究可为未来超大面阵碲镉汞红外焦平面阵列图像传感器空间应用提供关键数据支撑.A large-format, high-resolution Hg1–xCdxTe infrared focal plane array (IRFPA) image sensor can be used in aerospace remote sensing and high-precision satellite imaging. The next generation of meteorological satellites in China will all adopt this type of image sensor. However, space high-energy protons can cause displacement damage effects in Hg1–xCdxTe IRFPA detectors and induce total ionizing dose (TID) effects in the pixel unit metal-oxide-semiconductor (MOS) transistors. This study focuses on a 55nm manufacturing process Hg1–xCdxTe IRFPA sensor widely used in image sensors by using a 2 pixel×2 pixel basic pixel unit model for large-format arrays and constructing a Geant4 simulation model. Simulations are conducted for different proton irradiation fluences, including 1010, 1011, 1012 and 1013 cm–2. The results show the displacement damage under various fluences, including non-ionizing energy loss and displacement atom distribution. It is found that at a proton cumulative fluence of 1013 cm–2, in addition to considering the displacement damage effect in the Hg1–xCdxTe IRFPA sensor, attention must also be paid to the TID effects on the MOS transistors in the pixel units. Additionally, this study provides a preliminary assessment of the damage conditions in the space environment based on simulation results. This study provides crucial data for supporting the space applications of future large-format Hg1–xCdxTe IRFPA image sensors.
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Keywords:
- Hg1–xCdxTe /
- infrared focal plane /
- proton /
- Geant4 /
- displacement damage /
- total ionizing dose
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图 3 碲镉汞红外焦平面阵列质子入射仿真模型简图
Fig. 3. Simulation schematic of proton striking Hg1–xCdxTe infrared focal plane.
图 6 不同模拟注量下的PKA分布信息 (a) 1010 cm–2; (b) 1011 cm–2; (c) 1012 cm–2; (d) 1013 cm–2
Fig. 6. PKA distribution at different simulation fluences: (a) 1010 cm–2; (b) 1011 cm–2; (c) 1012 cm–2; (d) 1013 cm–2.
图 7 不同注量质子仿真获得的NIEL信息 (a) 1010 cm–2; (b) 1011 cm–2; (c) 1012 cm–2; (d) 1013 cm–2
Fig. 7. NIEL under different proton fluences: (a) 1010 cm–2; (b) 1011 cm–2; (c) 1012 cm–2; (d) 1013 cm–2.
图 8 注量为1013 cm–2的质子入射碲镉汞阵列产生的不同NIEL
Fig. 8. NIEL from different interactions at 1013 cm–2.
图 9 模拟质子注量为1013 cm–2时Nd在每个分段区间的分布信息
Fig. 9. Distribution of Nd in each interval at 1013 cm–2 proton fluence.
图 10 模拟质子注量为1013 cm–2时整个碲镉汞阵列探测器中的Nd情况
Fig. 10. Nd in the entire Hg1–xCdxTe array detector at 1013 cm–2 simulated proton fluence.
图 11 模拟质子注量为1013 cm–2的DPA分布信息
Fig. 11. DPA in the Hg1–xCdxTe array detector at 1013 cm–2 simulated proton fluences.
图 12 模拟质子注量为1013 cm–2时整个碲镉汞阵列探测器中的DPA
Fig. 12. The entire DPA in Hg1–xCdxTe array under 1013 cm–2 proton fluences.
表 1 不同模拟注量下的PKA种类数目
Table 1. The PKA of different fluences in simulation.
仿真情况 入射质子注量/cm–2 PKA种类数目 A 1010 27 B 1011 36 C 1012 61 D 1013 159 
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表 2 模拟注量为1013cm–2的质子入射碲镉汞焦平面阵列产生的PKA
Table 2. The PKA detail under the proton fluences of 1013 cm–2 in simulation.
元素 反冲核及占比 比重 Te 占比>1% Te130(16.44%), Te128(15.70%), Te126(9.56%), Te125(3.63%), Te124(2.47%), Te122(1.36%) 49.71% 占比<1% Te123, Te120, Te127, Te121, Te129, Te119, Te118 Hg 占比>1% Hg202(7.87%), Hg200(6.20%), Hg199(4.55%),
Hg201(3.50%), Hg198(2.72%), Hg204(1.28%)26.69% 占比<1% Hg196, Hg197, Hg194, Hg192, Hg193,
Hg191, Hg195, Hg190, Hg189Cd 占比>1% Cd114(6.42%), Cd112(5.73%), Cd111(3.08%), Cd110(3.04%),
Cd113(2.86%), Cd116(1.67%)23.59% 占比<1% Cd106, Cd108, Cd109, Cd104, Cd107, Cd105, Cd115, Cd124 其他 He4, I126, I124, I123, I125, I128, In112, I127, I129, In111, Sb121, I122, I130, In113, Sb117, Sb119, Sb123, In108, Sb120, Sb122, Ag109, Au193, etc 0.01%
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表 3 不同仿真情况下的像素单元MOS管累积电离总剂量情况
Table 3. Total ionizing dose in the MOS of pixel under different simulation fluences.
仿真情况 模拟注量/cm–2 像素单元MOS管
电离总剂量/radA 1010 0 B 1011 0 C 1012 0 D 1013 5301.95
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