-ray detector based on n-type 4H-SiC Schottky barrier diode

Du Yuan-Yuan; Zhang Chun-Lei; Cao Xue-Lei

doi:10.7498/aps.65.207301

Abstract

Silicon carbide (SiC) is a wide band-gap, high-temperature-resistant, and radiation-resistant semiconducting material, which can be used as a radiation detector material in harsh environments such as high radiation background and high temperatures. Schottky barrier diode radiation detectors are fabricated using 100 upm-thick n-type 4H-SiC epitaxial layers for low energy -ray detection. The spectrum responses of 4H-SiC Schottky barrier detectors are investigated by irradiation of -ray from 241Am source. Schottky diodes are prepared by magnetron-sputtering 100 nm-thick nickel on epitaxial surface (Si face) to obtain Schottky contact and Ni/Au on substrate surface (C face) to obtain Ohmic back contact, respectively. Room temperature current-voltage (I-V) and capacitance-voltage (C-V) curves are measured to study the properties of Schottky diodes. Ohmic characteristic measurement shows that the Ohmic contact is formed after annealing in a temperature range of 900-1050℃, and the lowest specific contact resistivity of 2.5510-5 cm2 is obtained after annealing at 1050℃. The forward I-V curve reveals that the Schottky barrier height and the ideality factor are 1.617 eV and 1.127, respectively, indicating that the main current transportation process is the thermal electron emission. From the C-V curve, besides the net dopant concentration being inferred to be 2.9031014 cm-3, the profile of the free carrier concentration in epitaxial layer is also studied. A comparision of the reverse I-V curves of SiC Schottky diodes with different epitaxial layer thickness shows that the diode with 100 upm-thick epitaxial layer has a constant reverse leakage current when the bias voltage is less than 400 V, showing good rectification characteristics. By applying a reverse bias of 500 V, the diode has a leakage current of 2.11 nA, exhibiting a relatively high breakdown voltage. The depletion layer width of SiC detector is calculated to be 94.4 m at 500 V, indicating that the epitaxial layer is almost fully depleted. The signal of SiC detector through preamplifier displays a relatively low amplitude pulse (15 mV). A typical -ray spectrum response from SiC detector shows 9.49% (5.65 keV) energy resolution for 59.5 keV with a reverse bias of 300 V. The potential causes of poor count rate and energy resolution of fabricated detectors are analyzed in this article. The lower count rate is mainly caused by the narrow depletion layer, resulting in fewer photons deposited in sensitive region which can generate carriers. The poor energy resolution of SiC detector can be attributed to the electronic noise of read-out circuit, the pre-match amplifier circuit for detector needs to be improved, in addition, the extra defects existing in detector caused by increasing thickness of epitaxial layer can also deteriorate the detector performance.

Keywords:

Authors and contacts

1.
Key Laboratory of Particle Astrophysics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Du Yuan-Yuan, duyuanyuan@ihep.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11203026).

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Cited By

[1]	Rogowski J, Kubiak A 2012 Mater. Sci. Eng. B 177 1318
[2]	Siad M, Vargas P C, Nkosi M, Saidi D, Souami N, Daas N, Chami C A 2009 Appl. Surf. Sci. 256 256
[3]	Bertuccio G, Caccia S, Puglisi D, Macera D 2011 Nucl. Instrum. Methods Phys. Res. Sect. A 652 193
[4]	Nava F, Vittone E, Vanni P, Verzellesi G, Fuochi G P, Lanzieri C, Glaser M 2003 Nucl. Instrum. Methods Phys. Res. Sect. A 505 645
[5]	Han C, Zhang Y M, Song Q W, Tang X Y, Zhang Y M, Guo H, Wang Y H 2015 Chin. Phys. B 24 117304
[6]	Yuan L, Zhang Y M, Song Q W, Tang X Y, Zhang Y M 2015 Chin. Phys. B 24 068502
[7]	Chaudhuri K S, Krishna M R, Zavalla J K, Mandal C K 2013 Nucl. Instrum. Methods Phys. Res. Sect. A 701 214
[8]	Mandal C K, Muzykov G P, Chaudhuri K S, Terry R J 2013 IEEE Trans. Nucl. Sci. 60 2888
[9]	Flammang W R, Seidel G J, Ruddy H F 2007 Nucl. Instrum. Methods Phys. Res. Sect. A 579 177
[10]	Wu J, Lei J R, Jiang Y, Chen Y, Rong R, Fan X Q 2013 High Power Laser Part. Beams 25 1793 (in Chinese)[吴健, 雷家荣, 蒋勇, 陈雨, 荣茹, 范晓强2013强激光与粒子束25 1793]
[11]	Wu J, Jiang Y, Gan L, Li M, Zou D H, Rong R, Lu Y, Li J J, Fan X Q, Lei J R 2015 High Power Laser Part. Beams 27 014004 (in Chinese)[吴健, 蒋勇, 甘雷, 李勐, 邹德慧, 荣茹, 鲁艺, 李俊杰, 范晓强, 雷家荣2015强激光与粒子束27 014004]
[12]	Jiang Y, Wu J, Wei J J, Fan X Q, Chen Y, Rong R, Zou D H, Li M, Bai S, Chen G, Li L 2013 Atomic Energy Sci. Technol. 47 664 (in Chinese)[蒋勇, 吴健, 韦建军, 范晓强, 陈雨, 荣茹, 邹德慧, 李勐, 柏松, 陈刚, 李理2013原子能科学技术47 664]
[13]	Wu J, Lei J R, Jiang Y, Chen Y, Rong R, Zou D H, Fan X Q, Chen G, Li L, Bai S 2013 Nucl. Instrum. Methods Phys. Res. Sect. A 708 72
[14]	Iwamoto N, Johnson C B, Hoshino N, Ito M, Tsuchida H, Kojima K, Ohshima T 2013 J. Appl. Phys. 113 143714
[15]	Tong W L, Sun Y J, Liu Y H, Zhao G J, Chen Z Z 2015 J. Shanghai Normal Univ. (Nat. Sci.) 44 430(in Chinese)[童武林, 孙玉俊, 刘益宏, 赵高杰, 陈之战2015上海师范大学学报(自然科学版) 44 430]
[16]	Liu J, Hao Y, Feng Q, Wang C, Zhang J C, Guo L L 2007 Acta Phys. Sin. 56 3483 (in Chinese)[刘杰, 郝跃, 冯倩, 王冲, 张进城, 郭亮良2007 56 3483]
[17]	Shur M, Rumyantsev S, Levinshtein M (translated by Yang Y T, Jia H J, Duan B X) 2012 SiC Mareials and Devices, Volume I&Ⅱ (Beijing:Publishing House of Electroics Industry) pp88-92(in Chinese)[Shur M, Rumyantsev S, Levinshtein M主编(杨银堂, 贾护军, 段宝兴译) 2012碳化硅半导体材料与器件(北京:电子工业出版社)第88–92页]
[18]	Zha G Q, Wang T, Xu Y D, Jie W Q 2013 Physics 42 862 (in Chinese)[查钢强, 王涛, 徐亚东, 介万奇2013物理42 862]
[19]	Bertuccio G, Casiraghi R 2003 IEEE Trans. Nucl. Sci. 50 175
[20]	Lees E J, Bassford J D, Fraser W G, Horsfall B A, Vassilevski V K, Wright G N, Owens A 2007 Nucl. Instrum. Methods Phys. Res. Sect. A 578 226
[21]	Jiang Y, Fan X Q, Rong R, Wu J, Bai S, Li L 2012 Nucl. Electron. Detect. Technol. 32 1372 (in Chinese)[蒋勇, 范晓强, 荣茹, 吴建, 柏松, 李理2012核电子学与探测技术32 1372]
[22]	Mandal C K, Chaudhuri K S, Nguyen V K, Mannan A M 2014 IEEE Trans. Nucl. Sci. 61 2338

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Vol. 65, Issue 20 - 2016-10-20

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