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Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li. A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica,
2022, 71(19): 198501.
doi: 10.7498/aps.71.20220879
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[2] |
Xu Yu, Wang Chao-Liang, Qin Si-Cheng, Zhang Yu, He Tao, Guo Ying, Ding Ke, Zhang Yu-Ru, Yang Wei, Shi Jian-Jun, Du Cheng-Ran, Zhang Jing. Treatment uniformity of atmospheric pressure plasma on flexible and porous material surface: A critical review. Acta Physica Sinica,
2021, 70(9): 099401.
doi: 10.7498/aps.70.20210077
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[3] |
Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong. Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica,
2021, 70(3): 037102.
doi: 10.7498/aps.70.20200921
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[4] |
Han Jin-Hua, Guo Gang, Liu Jian-Cheng, Sui Li, Kong Fu-Quan, Xiao Shu-Yan, Qin Ying-Can, Zhang Yan-Wen. Design of 100-MeV proton beam spreading scheme with double-ring double scattering method. Acta Physica Sinica,
2019, 68(5): 054104.
doi: 10.7498/aps.68.20181787
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[5] |
Niu Chen, Liu Zhong-Wei, Yang Li-Zhen, Chen Qiang. Effect of standing wave on the uniformity of a low magnetic field helicon plasma. Acta Physica Sinica,
2017, 66(4): 045201.
doi: 10.7498/aps.66.045201
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[6] |
Zhong Zhe-Qiang, Hou Peng-Cheng, Zhang Bin. A novel radial beam smoothing scheme based on optical Kerr effect. Acta Physica Sinica,
2016, 65(9): 094207.
doi: 10.7498/aps.65.094207
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[7] |
Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei. -ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica,
2016, 65(20): 207301.
doi: 10.7498/aps.65.207301
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[8] |
Li Ze-Long, Zhong Zhe-Qiang, Zhang Bin. Study on multi-beam superposition using complementary polarization control plates. Acta Physica Sinica,
2014, 63(9): 095204.
doi: 10.7498/aps.63.095204
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[9] |
Jia Ren-Xu, Liu Si-Cheng, Xu Han-Di, Chen Zheng-Tao, Tang Xiao-Yan, Yang Fei, Niu Ying-Xi. Study on Grove model of the 4H-SiC homoepitaxial growth. Acta Physica Sinica,
2014, 63(3): 037102.
doi: 10.7498/aps.63.037102
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[10] |
Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men. Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica,
2011, 60(3): 037808.
doi: 10.7498/aps.60.037808
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[11] |
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica,
2011, 60(1): 017103.
doi: 10.7498/aps.60.017103
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[12] |
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui. Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer. Acta Physica Sinica,
2010, 59(5): 3542-3546.
doi: 10.7498/aps.59.3542
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[13] |
Pan Jin-Yan, Gao Yun-Long, Zhang Wen-Yan. High luminance carbon nanotube field emission cold cathode based on indium tin oxide/Ti composite electrode. Acta Physica Sinica,
2010, 59(12): 8762-8769.
doi: 10.7498/aps.59.8762
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[14] |
Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Guo Hui, Luan Su-Zhen. The relation between green-band luminescence of 4H-SiC homoepitaxial layer and defects. Acta Physica Sinica,
2008, 57(7): 4456-4458.
doi: 10.7498/aps.57.4456
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[15] |
Li He, Li Xue-Dong, Li Juan, Wu Chun-Ya, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Li-Zhu. Investigation on the improvement of the stability and uniformity of solution-based metal-induced crystallization poly-Si using surface-embellishment. Acta Physica Sinica,
2008, 57(4): 2476-2480.
doi: 10.7498/aps.57.2476
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[16] |
Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica,
2005, 54(6): 2918-2923.
doi: 10.7498/aps.54.2918
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[17] |
Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming. The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica,
2003, 52(10): 2541-2546.
doi: 10.7498/aps.52.2541
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[18] |
Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin. . Acta Physica Sinica,
2002, 51(2): 304-309.
doi: 10.7498/aps.51.304
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[19] |
Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming. . Acta Physica Sinica,
2002, 51(1): 148-152.
doi: 10.7498/aps.51.148
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[20] |
Xu Chang-Fa, Yang Yin-Tang, Liu Li. . Acta Physica Sinica,
2002, 51(5): 1113-1117.
doi: 10.7498/aps.51.1113
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