Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1550℃, under the pressure of 100 mbar using the mbar step-controlled technique with rotation in the horizontal low-pressure hot-wall CVD (LP-HW-CVD) system to obtain high quality 4H-SiC epilayers. The surface morphology, structure and optical properties of the epilayers are characterized by SEM, AFM, FTIR and C-V measurement. The 4H-SiC epitaxial layer has a good crystalline structure and mirror-like surface with few surface defects. N type 4H-SiC epilayers are obtained by in-situ doping of N2.The uniformities of thickness are 1.74%, 1.99%, and 1.32%, and the uniformities of doping concentration are tested to be 3.37%, 2.39%, and 2.01%, respectively. The deviations in thickness and concentration between different samples are 1.54% and 3.63% under the same processing conditions, which shows that the process is repeatable and reliable.