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Qi Bing, Tian Xiao, Wang Jing, Wang Yi-Shan, Si Jin-Hai, Tang Jie. One-dimensional simulation of Ar dielectric barrier discharge driven by combined rf/dc sources at atmospheric pressure. Acta Physica Sinica,
2022, 71(24): 245202.
doi: 10.7498/aps.71.20221361
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Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li. A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica,
2022, 71(19): 198501.
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Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong. Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica,
2021, 70(3): 037102.
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Lu Qi, Lyu Hong-Ming, Wu Xiao-Ming, Wu Hua-Qiang, Qian He. Research progress of graphene radio frequency devices. Acta Physica Sinica,
2017, 66(21): 218502.
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Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei. -ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica,
2016, 65(20): 207301.
doi: 10.7498/aps.65.207301
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Zhang Yan, Dong Gang, Yang Yin-Tang, Wang Ning, Wang Feng-Juan, Liu Xiao-Xian. A novel interconnect-optimal power model considering self-heating effect. Acta Physica Sinica,
2013, 62(1): 016601.
doi: 10.7498/aps.62.016601
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica,
2012, 61(2): 027202.
doi: 10.7498/aps.61.027202
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica,
2011, 60(1): 017103.
doi: 10.7498/aps.60.017103
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Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men. Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica,
2011, 60(3): 037808.
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Zou Xiu, Zou Bin-Yan, Liu Hui-Ping. Effect of external magnetic field on ion energy density of collisional radio-frequency sheath. Acta Physica Sinica,
2009, 58(9): 6392-6396.
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong, Wang Yue-Hu, Chen Liang. The extraction method for trap parameters in 4H-SiC MESFETs. Acta Physica Sinica,
2008, 57(5): 2871-2874.
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu. Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica,
2008, 57(10): 6649-6653.
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Zhao Guo-Wei, Wang Zhi-Jiang, Xu Yue-Min, Liang Zhi-Wei, Xu Jie. Numerical simulation of plasma nonlinear phenomena excited by radio-frequency wave using FDTD method. Acta Physica Sinica,
2007, 56(9): 5304-5308.
doi: 10.7498/aps.56.5304
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Zou Xiu. Structure of radio-frequency flat plasma sheath in an oblique magnetic field. Acta Physica Sinica,
2006, 55(4): 1907-1913.
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Qiu Liang, Meng Yue-Dong, Ren Zhao-Xing, Zhong Shao-Feng. A new atmospheric RF cold plasma source with microhollow cathode structure. Acta Physica Sinica,
2006, 55(11): 5872-5877.
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica,
2005, 54(6): 2918-2923.
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming. The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica,
2003, 52(10): 2541-2546.
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Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin. . Acta Physica Sinica,
2002, 51(2): 304-309.
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Xu Chang-Fa, Yang Yin-Tang, Liu Li. . Acta Physica Sinica,
2002, 51(5): 1113-1117.
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DAI ZHONG-LING, WANG YOU-NIAN, MA TENG-CAI. DYNAMICAL MODEL OF THE RADIO-FREQUENCY PLASMA SHEATH. Acta Physica Sinica,
2001, 50(12): 2398-2402.
doi: 10.7498/aps.50.2398
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