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2022, 71(3): 037301.
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Huang Xin-Mei, He Xiao-Li, Xu Qiang, Chen Ping, Zhang Yong, Gao Chun-Hong. Ionic-compound based high performance perovskite light emitting diodes. Acta Physica Sinica,
2022, 71(20): 208502.
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Zhu Wei-Jun, Chen Jin-Xin, Gao Yu-Han, Yang De-Ren, Ma Xiang-Yang. Electroluminescence from silicon-based light-emitting device with erbium-doped TiO2 films: Enhancement effect of ytterbium codoping. Acta Physica Sinica,
2019, 68(12): 124204.
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica,
2015, 64(10): 107801.
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Chen Zhan-Xu, Wan Wei, He Ying-Ji, Chen Geng-Yan, Chen Yong-Zhu. Light-extraction enhancement of GaN-based LEDs by closely-packed nanospheres monolayer. Acta Physica Sinica,
2015, 64(14): 148502.
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2014, 63(12): 127201.
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Gao Song, Zhao Su-Ling, Xu Zheng, Yang Yi-Fan, Liu Zhi-Min, Xie Xiao-Yi. Near ultraviolet luminescence characteristics of ZnO nanoparticle film. Acta Physica Sinica,
2014, 63(15): 157702.
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Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui. Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica,
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Liu Bo-Zhi, Li Rui-Feng, Song Ling-Yun, Hu Lian, Zhang Bing-Po, Chen Yong-Yue, Wu Jian-Zhong, Bi Gang, Wang Miao, Wu Hui-Zhen. QD-LED devices using ZnSnO as an electron-transporting layer. Acta Physica Sinica,
2013, 62(15): 158504.
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2013, 62(5): 057802.
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Kan Peng-Zhi, Zhao Su-Ling, Xu Zheng, Kong Chao, Wang Da-Wei, Yan Yue. The applications of ZnO nanorods in poly ［2-methoxy-5-(2-ethyl-hexyloxy)-1, 4-phenylene vinylene］solid state cathodoluminescence device. Acta Physica Sinica,
2010, 59(1): 616-619.
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2009, 58(3): 1992-1996.
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang. The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica,
2008, 57(9): 5869-5874.
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Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica,
2008, 57(12): 7860-7864.
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Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang. Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors. Acta Physica Sinica,
2008, 57(9): 5887-5892.
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Nie Hai, Zhang Bo, Tang Xian-Zhong. Electroluminescence of polymer doped small-molecules light-emitting diodes and the effects of doping trap. Acta Physica Sinica,
2007, 56(1): 263-267.
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Chang Yan-Ling, Zhang Qi-Feng, Sun Hui, Wu Jin-Lei. Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure. Acta Physica Sinica,
2007, 56(4): 2399-2404.
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2007, 56(6): 3479-3482.
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