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Luminescence properties of basal plane dislocations in 4H-SiC are studied by means of cathodoluminescence(CL) and defect selective etching. It is found that basal plane screw dislocations (BTSD) and basal plane mixed dislocations (BMD) have green and blue-green luminescence properties, respectively. The spectrum peaks near 530 nm and 480 nm correspond to BTSD and BMD,respectively. It is found from measurement that the luminescence peak from BMD is blue-shifted. The atoms of BTSD near the dislocation core are affected by tensile stress along the Burger’s vector direction, leading to its band gap narrowed. In addition, the Burger’s vector of BMD has both screw and edge components. It is the edge component that is responsible for the band gap broadening. In other words, the wavelength from BMD is shorter than that from BTSD.
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Keywords:
- 4H-SiC /
- basal plane dislocation /
- luminescence properties /
- band gap
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[8] Miao R X, Zhang Y M, Zhang Y M, Tang X Y, Gai Q F 2010 Chin. Phys. B 19 076106 (in press)
[9] Kakanakova-Georgieva A, Yakimova R, Henry A 2002 J. Appl. Phys. 91 2890
[10] Ja R X, Zhang Y M, Zhang Y M 2008 Acta Phys. Sin. 57 4456 (in Chinese) [贾仁需、 张义门、 张玉明 2008 57 4456]
[11] Liu E K, Zhu B S, Luo J S 2006 Physics of Semiconductor (National Defense Industry Press) p.47 (in Chinese) [刘恩科、 朱秉升、 罗晋生 2006 半导体物理学 (国防工业出版社) 第47页]
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[1] Maxinenko S I, Sudarshan T S 2005 J. Appl. Phys. 97 074501
[2] Ha S, Skowronski M, Lendenmann H 2004 J.Appl. Phys. 96 393
[3] Sumakeris J J, Das M, McD.Hobgood H, Müller S G, Paisley M J, Ha S, Skowronski M, Palmour J W, Carter C H Jr. 2004 Mater.Sci.Forum 1113 457
[4] Ottaviani L, Idrissi H, Hidalgo P, Lancin M, Pichaud B 2005 Phys. Stat. Sol. (c) 6 1792
[5] Ottaviani L, Hidalgo P, Idrissi H, Lancin M, Martinuzzi S, Pichaud B 2004 J. Phys.: Condens Matter 16 s107
[6] Kamata I, Tsuchida H, Miyanagi T, Nakamura T 2006 Mater. Sci. Forum 527-529 415
[7] Xu Z J 2007 Testing and Aanalysis on Semiconductor (Science Press) P.245 (in Chinese) [许振嘉 2007 半导体检测与分析(科学出版社) 第245页]
[8] Miao R X, Zhang Y M, Zhang Y M, Tang X Y, Gai Q F 2010 Chin. Phys. B 19 076106 (in press)
[9] Kakanakova-Georgieva A, Yakimova R, Henry A 2002 J. Appl. Phys. 91 2890
[10] Ja R X, Zhang Y M, Zhang Y M 2008 Acta Phys. Sin. 57 4456 (in Chinese) [贾仁需、 张义门、 张玉明 2008 57 4456]
[11] Liu E K, Zhu B S, Luo J S 2006 Physics of Semiconductor (National Defense Industry Press) p.47 (in Chinese) [刘恩科、 朱秉升、 罗晋生 2006 半导体物理学 (国防工业出版社) 第47页]
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