Switching characteristics of all spin logic devices based on Co and Permalloy nanomagnet

Wang Sen; Cai Li; Cui Huan-Qing; Feng Chao-Wen; Wang Jun; Qi Kai

doi:10.7498/aps.65.098501

Abstract

The need for low-power alternatives to digital electronic circuits has aroused the increasing interest in spintronic devices for their potentials to overcome the power and performance limitations of (CMOS). In particular, all spin logic (ASL) technology, which stores information using the magnetization direction of the nano-magnet and communicates using spin current, is generally thought to be a good post-CMOS candidate for possessing capabilities such as nonvolatiliy, high density, low energy dissipation. In this paper, based on nano-magnetic dynamics described by Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation and transport physics of spin injection and spin diffusion, a coupled spin-transport/magneto-dynamics model for ASL is established. Under different channel lengths and applied voltages, the switching characteristics of ASL device comprised of Co and Permalloy (Py) nano-magnets are analyzed by using the coupled spin-transport/magneto-dynamics model. The results indicate that the switch delay, energy dissipation and thermal noise effect of PyASL are lower than those of CoASL. The main reason is that the saturation magnetization of Py is less than that of Co. Under the same applied voltage, the maximal channel length of PyASL is longer than that of CoASL when ASL device can switch accurately. Moreover, the two ASL devices' switching delay can be reduced by reducing channel length or increasing applied voltage, and the energy dissipation can be reduced by reducing channel length or applied voltage, whereas there are no optimized applied voltages to minimize the energy-delay product. In addition, the influences of thermal noise on switching delay and energy dissipation can be improved by lowering channel length, but increasing applied voltage can only improve the influence of thermal noise on switching delay. The above-mentioned conclusions will supply essential guidelines for optimizing the ASL devices' materials and configuration.

Keywords:

all spin logic /
spin transfer torque /
spin transport /
Landau-Lifshitz-Gilbert-Slonczewski equation

Authors and contacts

1.
Science College, Air Force Engineering University, Xi'an 710051, China

Corresponding author: Wang Sen, wangsen1998-2002@163.com

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61172043), the Program of Shaanxi Provincial Natural Science for Basic Research, China (Grant No. 2014JQ8343) and the Sustentation Funds of the Science College for Doctoral (Postdoctoral) Scientific Research, Air Force Engineering University, China (Grant No. 2013BSKYQD10).

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Cited By

[1]	Locatelli N, Cros V, Grollier J 2014 Nature Mater. 13 11
[2]	Kim J, Paul A, Crowell P A, Koester S J, Sapatnekar S S, Wang J P, Kim C H 2015 Proc. IEEE 103 106
[3]	Yang F J, Han S X, Xie S J 2014 Chin. Phys. B 23 058106
[4]	Wu S B, Chen S, Li H, Yang X F 2012 Acta Phys. Sin. 61 097504 (in Chinese) [吴少兵, 陈实, 李海, 杨晓非 2012 61 097504]
[5]	Katine J A, Albert F J, Buhrman R A 2000 Phys. Rev. Lett. 84 3149
[6]	Grollier J 2001 Appl. Phys. Lett. 78 3663
[7]	Fang B, Zeng Z M 2014 Chin. Sci. Bull. 59 1804 (in Chinese) [方彬, 曾中明 2014 科学通报 59 1804]
[8]	Jin W, Wan Z M, Liu Y W 2011 Acta Phys. Sin. 60 017502 (in Chinese) [金伟, 万振茂, 刘要稳 2011 60 017502]
[9]	Zhang L, Ren M, Hu J N, Deng N, Chen P Y 2008 Acta Phys. Sin. 57 2427 (in Chinese) [张磊, 任敏, 胡九宁, 邓宁, 陈培毅 2008 57 2427]
[10]	Wang W G, Li M G, Hageman S, Chien C L 2012 Nature Mater. 11 64
[11]	Liu L, Moriyama T, Ralph D C, Buhrman R A 2009 Appl. Phys. Lett. 94 122508
[12]	Guo Z Z, Deng H D, Huang J S, Xiong W J, Xu C D 2014 Acta Phys. Sin. 63 138501 (in Chinese) [郭子政, 邓海东, 黄佳声, 熊万杰, 徐初东 2014 63 138501]
[13]	Liu H F, Syed S A, Han X F 2014 Chin. Phys. B 23 077501
[14]	Chen X, Liu H F, Han X F, Ji Y 2013 Acta Phys. Sin. 62 137501 (in Chinese) [陈希, 刘厚方, 韩秀峰, 姬杨 2013 62 137501]
[15]	Yang J, Zhang X, Miao R D 2014 Acta Phys. Sin. 63 217202 (in Chinese) [杨军, 章曦, 苗仁德 2014 63 217202]
[16]	Xu P 2008 Nature Nanotech. 3 97
[17]	Behin-Aein B, Datta D, Salahuddin S, Datta S 2010 Nature Nanotech. 5 266
[18]	Srinivasan S, Sarkar A, Behin-Aein B, Datta S 2011 IEEE Trans. Magn. 47 4026
[19]	Calayir V, Nikonov D E, Manipatruni S, Young I A 2014 IEEE Trans. Circuits Syst. I. Reg. Papers 61 393
[20]	Chang S C, Iraei R M, Manipatruni S, Nikonov D E, Young I A, Naeemi A 2014 IEEE Trans. Electron Dev. 61 2905
[21]	Chang S C, Manipatruni S, Nikonov D E, Young I A, Naeemi A 2014 IEEE Trans. Magn. 50 3400513
[22]	Behin-Aein B, Sarkar A, Srinivasan S, Datta S 2011 Appl. Phys. Lett. 98 123510
[23]	Roy K, Bandyopadhyay S, Atulasimha J 2012 J. Appl. Phys. 112 023914
[24]	Brataas A, Bauer G E W, Kelly P J 2006 Phys. Rep. 427 157
[25]	Manipatruni S, Nikonov D E, Young I A 2012 IEEE Trans. Circuits Syst. I. Reg. Papers 59 2801
[26]	Ji Y, Hoffmann A, Jiang J S, Pearson J E, Bader S D 2007 J. Phys. D: Appl. Phys. 40 1280
[27]	Bass J, William P P 2007 J. Phys.: Condens. Matter 19 183201
[28]	Trudel S, Gaier O, Hamrle J, Hillebrands B 2010 J. Phys. D: Appl. Phys. 43 193001
[29]	Bonanni V, Bisero D, Vavassori P, Gubbiotti G, Madami M, Adeyeye A O, Goolaup S, Singh N, Ono T, Spezzani C 2009 J. Magn. Magn. Mater. 321 3038
[30]	Johnson M T, Jungblut R, Kelly P J, Broeder F J A 1995 J. Magn. Magn. Mater. 148 118
[31]	Lee S W, Lee K J 2010 IEEE Trans. Magn. 46 2349
[32]	Gradmann U, Elmers H J 1999 J. Magn. Magn. Mater. 206 L107

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Vol. 65, Issue 9 - 2016-05-05

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