Spin-orbit torque efficiency improved by BiSePt alloy

He Hao-Bin; Lan Xiu-Kai; Ji Yang

doi:10.7498/aps.72.20230285

Abstract

In order to achieve high-efficiency spin-orbit torque devices, higher charge-spin conversion efficiency, and lower resistivity are required in the strong spin-orbit coupling layer that provides the spin current. In this work we prepare BiSePt alloy/Co heterostructures with in-plane magnetic anisotropy by magnetron sputtering deposition. The alloy layer is deposited via one of two procedures, either co-sputtering or alternative-sputtering. We study the BiSePt alloy samples and find that the spin orbit torque (SOT) efficiency decreases with the increase of Pt component, which is attributed to the change of topological order of Bi₂Se₃ amorphous surface, caused by Pt doping. And the resistivity decreases with the increase of Pt component, which depends on the increase of metallic property. Due to the balance of these two competing mechanisms, the spin Hall conductivity of the alloy layer varies non-monotonically with the concentration ratio, and reach an optimal value at a ratio of 67% of Bi₂Se₃ component. With the increase of the Bi₂Se₃ component, the SOT efficiency, electrical resistivity and spin Hall conductance of the alloy layer show different trends. At about 20%–70%, they increase/decrease tardily. At about 70%–100%, the resistivity ascends more prominently than the SOT efficiency, which leads the spin Hall conductance to decrease. Comparing with using the co-sputtering deposition, the electrical conductivity and spin Hall angle of the alloy layer obtained using alternating sputtering deposition are small, which is attributed to the enhancing of interfacial scattering and the filter effect of Pt on the spin flow. In contrast to traditional pure heavy metal materials (such as Pt, Ta) and topological insulator materials like Bi₂Se₃, our BiSePt alloy devices obtained by co-sputtering deposition achieve industry-matched preparation conditions, greater SOT efficiency, and considerable electrical conductivity of the alloy layer, thus making further applications of SOT devices possible.

Keywords:

Authors and contacts

1.
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Ji Yang, jiyang@semi.ac.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1405100) and the National Natural Science Foundation of China (Grant No. 12274406).

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References

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Cited By

图 1 合金层[Bi₂Se₃]_xPt_1–x电阻率图, 纵轴为对数坐标. 电阻率随Bi₂Se₃的配比x的增加而显著上升, mt后缀表示合金层为交替溅射生长

Figure 1. Resistivity diagram of the alloy layer [Bi₂Se₃]_xPt_1–x, with logarithmic scale in the vertical axis. The resistivity increases significantly as partition ration x of Bi₂Se₃ increases. The suffix “mt” indicates alternating sputtering growth for the alloy layer.

DownLoad: Full-Size Img PowerPoint

图 2 (a) 霍尔器件的测量示意图 (θ为外磁场与电流的夹角, 其中理想情况下H_ex在器件平面内); (b) SOT结构示意图, 显示了自旋流、外磁场H_ex与磁化M的偏差

Figure 2. (a) Measurement scheme of the Hall device (θ is the angle between the current and H_ex, which lies in the device plane in the ideal situation); (b) schematic structure of the SOT, shows the spin flow and the deviation between H_ex and magnetization M.

DownLoad: Full-Size Img PowerPoint

图 3 零偏置下不同配比样品的1 mA电流下的R_H(I, θ)曲线(图例中, 0—100%为共溅射样品Bi₂Se₃的配比)

Figure 3. R_H(I, θ) curves of samples with different proportions at 1 mA current and zero bias (In the legend, 0–100% represents the ratio of Bi₂Se₃).

DownLoad: Full-Size Img PowerPoint

图 4 对于Bi₂Se₃配比为48% (共溅射)的器件　(a) 面外磁场H_⊥下的R_AHE回线; (b) 在不同电流下的R_DH(I, θ)曲线, 振幅随电流增加而增加

Figure 4. For a device with a Bi₂Se₃ ratio of 48% (co-sputtering): (a) R_AHE loop under out-of-plane magnetic field H_⊥; (b) R_DH(I, θ) curve at different current, the amplitude increases with the increase of current.

DownLoad: Full-Size Img PowerPoint

图 5 (a) 不同样品的H_P随电流的变化, 虚线为线性拟合曲线; (b) 折线图, 不同样品在单位电流密度下的H_P (0—100%为共溅射样品Bi₂Se₃的配比)

Figure 5. (a) Variation of H_P of different samples with current, and the dashed line is a linear fitting curve; (b) line graph, H_P per unit current density of different samples (0–100% represents the ratio of Bi₂Se₃).

DownLoad: Full-Size Img PowerPoint

图 6 合金层[Bi₂Se₃]_xPt_1–x的自旋霍尔角及自旋霍尔电导率随Bi₂Se₃配比x的变化(mt后缀为多层膜样品)

Figure 6. Spin Hall angle and spin Hall conductivity of [Bi₂Se₃]_xPt_1–x alloy layer vary with the ratio x of Bi₂Se₃ (Suffix mt represents the multilayer sample).

DownLoad: Full-Size Img PowerPoint

map

[1]	Dieny B, Prejbeanu I L, Garello K, et al. 2020 Nat. Electron. 3 446 Google Scholar
[2]	Ralph D C, Stiles M D 2008 J. Magn. Magn. Mater. 320 1190 Google Scholar
[3]	Manchon A, Železný J, Miron I M, Jungwirth T, Sinova J, Thiaville A, Garello K, Gambardella P 2019 Rev. Mod. Phys. 91 035004 Google Scholar
[4]	Cao Y, Xing G Z, Lin H A, Zhang N, Zheng H Z, Wang K Y 2020 iScience 23 101614 Google Scholar
[5]	Cai K M, Yang M Y, Ju H L, Wang S M, Ji Y, Li B, Edmonds K W, Sheng Y, Zhang B, Zhang N, Liu S, Zheng H Z, Wang K Y 2017 Nat. Mater. 16 712 Google Scholar
[6]	Cao Y, Sheng Y, Edmonds K W, Ji Y, Zheng H Z, Wang K Y 2020 Adv. Mater. 32 1907929 Google Scholar
[7]	Sheng Y, Edmonds K W, Ma X Q, Zheng H Z, Wang K Y 2018 Adv. Electron. Mater. 4 1800224 Google Scholar
[8]	Kurenkov A, DuttaGupta S, Zhang C L, Fukami S, Horio Y, Ohno H 2019 Adv. Mater. 31 1900636 Google Scholar
[9]	Cao Y, Rushforth A, Sheng Y, Zheng H Z, Wang K Y 2019 Adv. Funct. Mater. 29 1808104 Google Scholar
[10]	Sheng Y, Li Y C, Ma X Q, Wang K Y 2018 Appl. Phys. Lett. 113 112406 Google Scholar
[11]	Qiu X P, Shi Z, Fan W J, Zhou S M, Yang H 2018 Adv. Mater. 30 1705699 Google Scholar
[12]	Yang M Y, Cai K M, Ju H L, Edmonds K W, Yang G, Liu S, Li B H, Zhang B, Sheng Y, Wang S G, Ji Y, Wang K Y 2016 Sci. Rep. 6 20778 Google Scholar
[13]	Miron I M, Garello K, Gaudin G, Zermatten P J, Costache M V, Auffret S, Bandiera S, Rodmacq B, Schuhl A, Gambardella P 2011 Nature 476 189 Google Scholar
[14]	Liu L Q, Pai C F, Li Y, Tseng H W, Ralph D C, Buhrman R A 2012 Science 336 555 Google Scholar
[15]	Mihai Miron I, Gaudin G, Auffret S, Rodmacq B, Schuhl A, Pizzini S, Vogel J, Gambardella P 2010 Nat. Mater. 9 230 Google Scholar
[16]	Li Y C, Edmonds K W, Liu X H, Zheng H Z, Wang K Y 2019 Adv. Quantum Technol. 2 1800052 Google Scholar
[17]	Ye X G, Zhu P F, Xu W Z, Shang N, Liu K, Liao Z M 2022 Chin. Phys. Lett. 39 037303 Google Scholar
[18]	Fukami S, Zhang C L, DuttaGupta S, Kurenkov A, Ohno H 2016 Nat. Mater. 15 535 Google Scholar
[19]	Li C H, van’t Erve O M J, Robinson J T, Liu Y, Li L, Jonker B T 2014 Nat. Nanotechnol. 9 218 Google Scholar
[20]	Han J H, Richardella A, Siddiqui S A, Finley J, Samarth N, Liu L Q 2017 Phys. Rev. Lett. 119 077702 Google Scholar
[21]	Dc M, Grassi R, Chen J Y, Jamali M, Reifsnyder H D, Zhang D L, Zhao Z Y, Li H S, Quarterman P, Lü Y, Li M, Manchon A, Mkhoyan K A, Low T, Wang J P 2018 Nat. Mater. 17 800 Google Scholar
[22]	Khang N H D, Ueda Y, Hai P N 2018 Nat. Mater. 17 808 Google Scholar
[23]	Sun Y, Zhang Y, Felser C, Yan B H 2016 Phys. Rev. Lett. 117 146403 Google Scholar
[24]	Wang Y, Zhu D P, Wu Y, Yang Y M, Yu J W, Ramaswamy R, Mishra R, Shi S, Elyasi M, Teo K L, Wu Y H, Yang H 2017 Nat. Commun. 8 1364 Google Scholar
[25]	Bekele Z A, Liu X H, Cao Y, Wang K Y 2020 Adv. Electron. Mater. 7 2000793 Google Scholar
[26]	Bekele Z A, Li R Z, Li Y C, Cao Y, Liu X H, Wang K Y 2021 Adv. Electron. Mater. 7 2100528 Google Scholar
[27]	Zhang E Z, Deng Y C, Li W H, Liu X H, Wang K Y 2022 Phys. Status. Solidi. A 219 2200498 Google Scholar
[28]	Zhu L J, Ralph D C, Buhrman R A 2021 Appl. Phys. Rev. 8 031308 Google Scholar
[29]	Chi Z D, Lau Y C, Kawaguchi M, Hayashi M 2021 APL Materials 9 061111 Google Scholar
[30]	Kawaguchi M, Shimamura K, Fukami S, Matsukura F, Ohno H, Moriyama T, Chiba D, Ono T 2013 Appl. Phys. Express 6 113002 Google Scholar
[31]	Slonczewski J C 1996 J. Magn. Magn. Mater. 159 L1 Google Scholar
[32]	Liu L Q, Lee O J, Gudmundsen T J, Ralph D C, Buhrman R A 2012 Phys. Rev. Lett. 109 096602 Google Scholar
[33]	Plekhanov E, Weber C 2019 Phys. Rev. B 100 115161 Google Scholar
[34]	Wang C T, Cheng T, Liu Z R, Liu F, Huang H Q 2022 Phys. Rev. Lett. 128 056401 Google Scholar
[35]	Corbae P, Ciocys S, Varjas D, Kennedy E, Zeltmann S, Molina-Ruiz M, Griffin S M, Jozwiak C, Chen Z H, Wang L W, Minor A M, Scott M, Grushin A G, Lanzara A, Hellman F 2023 Nat. Mater. 22 200 Google Scholar

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