Comprehensive Survey for the Frontier Disciplines

Qiao Jian-Liang; Chang Ben-Kang; Qian Yun-Sheng; Gao Pin; Wang Xiao-Hui; Xu Yuan

doi:10.7498/aps.60.107901

Abstract

The present status of research on negative electron affinity (NEA) GaN vacuum surface electron source is discussed with considering the latest research conclusions from our country and foreign country. Some valuable results about GaN vacuum electron source have been obtained including the theory of photoemission, the surface depuration method, the activation technique for GaN photocathode, the measurement of spectral response, the characteristics of material etc. The mechanism of photoemission for NEA GaN vacuum electron source is studied preliminarily. The depuration method of obtaining the atom cleanness surface is given. The GaN material is effectively activated with Cs or Cs/O. The spectral response of GaN vacuum electron source material is measured. The material characteristics affecting the quantum efficiency of the electron source are analyzed. The next investigation is also mentioned.

Keywords:

Authors and contacts

1.
School of Electronic Engineering and Optoelectronic Techniques, Nanjing University of Science and Technology, Nanjing 210094, China;
2.
Department of Electronic and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004, China

References

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[32]	Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese)[乔建良、常本康、杜晓晴、牛军、邹继军 2010 59 2855]
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[34]	Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L, Nihashi T 2002 IEEE J. Quantum Electron. 38 333
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Cited By

[1]	Peng D S, Feng Y C, Wang W X, Liu X F, Shi W, Niu H B 2006 Acta Phys. Sin. 55 3606 (in Chinese)[彭冬生、冯玉春、王文欣、刘晓峰、施炜、牛憨笨 2006 55 3606]
[2]
[3]	Li X H, Zhong F, Qiu K, Yin Z J, Ji C J 2008 Chin. Phys. B 17 1360
[4]	Shahedipour F S, Wessels B W 2000 Appl. Phys. Lett. 76 3011
[5]
[6]	Gutierrez W A, Pommerrenig H D 1973 Appl. Phys. Lett. 22 292
[7]
[8]
[9]	Fisher D G., Olsen G H 1979 Journal of Applied Physics 50 2930
[10]
[11]	Allen G A 1971 Journal of Physics D: Applied Physics. 4 308
[12]
[13]	Spicer W E, Herrera-Gmez A 1993 Proc. SPIE. 2022 18
[14]	Elamrawi K A, Elsayed-Ali H E 1999 Journal of Physics D:Applied Physics. 32 251
[15]
[16]
[17]	Elamrawi K A, Hafez M A, Elsayed-Ali H E 1998 Journal of Applied Physics. 84 4568
[18]
[19]	Liu Z, Sun Y, Machuca F, Pianetta P, Spicer W E, Pease R F W 2003 Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures 21 1953
[20]	Machuca F 2003 Ph. D. Dissertation (Stanford:Stanford University)
[21]
[22]
[23]	Turnbull A A, Evans G B 1968 Journal of Physics D: Applied Physics 1 155
[24]	Fisher D G 1974 IEEE Transactions on Electron Devices ED-21 541
[25]
[26]	Stocker B J 1975 Surface Science. 47 501
[27]
[28]
[29]	Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese)[乔建良、田思、常本康、杜晓晴、高频 2009 58 5847]
[30]	Qiao J L, Chang B K, Qian Y S, Du X Q, Zhang Y J, Gao P, Wang X H, Guo X Y, Niu J, Gao Y T 2010 Acta Phys. Sin. 59 3577 (in Chinese)[乔建良、常本康、钱芸生、杜晓晴、张益军、高频、王晓晖、郭向阳、牛军、高有堂 2010 59 3577 ]
[31]
[32]	Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese)[乔建良、常本康、杜晓晴、牛军、邹继军 2010 59 2855]
[33]
[34]	Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L, Nihashi T 2002 IEEE J. Quantum Electron. 38 333
[35]
[36]	Uchiyama S, Takagi Y, Niigaki M, Kan H 2005 Appl. Phys. Lett. 86 103511
[37]
[38]	Siegmund O, Vallerga J, McPhate J, Malloy J, Tremsin A, Martin A, Ulmer M, Wessels B 2006 Nuclear Instruments and Methods in Physics Research A 567 89
[39]
[40]	Ulmer M P, Wessels W B, Shahedipour F S, Korotkov R Y, Joseph C, Nihashi T. 2001 Proc. SPIE 4288 246
[41]
[42]	Ulmer M P, Wessels B W, Han B, Gregie J, Tremsin A, Siegmund O H W 2003 Proc. SPIE 5164 144
[43]

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Catalog

Vol. 60, Issue 10 - 2011-05-20

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