负电子亲和势GaN真空面电子源研究进展

乔建良; 常本康; 钱芸生; 高频; 王晓晖; 徐源

doi:10.7498/aps.60.107901

摘要

结合国内和国外的最新研究成果,论述了目前在NEA GaN真空面电子源研究方面的现状. 从光电发射理论、表面净化方法、阴极激活工艺、光谱响应测试以及材料本身特性等方面针对GaN真空电子源的研究取得了一定成绩:初步研究了NEA GaN电子源的光电发射机理;给出了可获得原子级清洁表面的净化方法;采用Cs或Cs/O对GaN材料进行了有效激活;测试了GaN真空电子源材料的光谱响应;探讨了影响电子源量子效率的材料特性. 指出了下一步研究需要关注的内容.

关键词:

NEA /
GaN /
电子源 /
光谱响应

Abstract

The present status of research on negative electron affinity (NEA) GaN vacuum surface electron source is discussed with considering the latest research conclusions from our country and foreign country. Some valuable results about GaN vacuum electron source have been obtained including the theory of photoemission, the surface depuration method, the activation technique for GaN photocathode, the measurement of spectral response, the characteristics of material etc. The mechanism of photoemission for NEA GaN vacuum electron source is studied preliminarily. The depuration method of obtaining the atom cleanness surface is given. The GaN material is effectively activated with Cs or Cs/O. The spectral response of GaN vacuum electron source material is measured. The material characteristics affecting the quantum efficiency of the electron source are analyzed. The next investigation is also mentioned.

Keywords:

NEA /
GaN /
electron source /
spectral response

作者及机构信息

1.
南京理工大学电子工程与光电技术学院,南京 210094;

2.
南阳理工学院电子与电气工程系,南阳 473004

基金项目: 国家自然科学基金 (批准号:60871012)资助的课题.

Authors and contacts

1.
School of Electronic Engineering and Optoelectronic Techniques, Nanjing University of Science and Technology, Nanjing 210094, China;

2.
Department of Electronic and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004, China

参考文献

[1]	Peng D S, Feng Y C, Wang W X, Liu X F, Shi W, Niu H B 2006 Acta Phys. Sin. 55 3606 (in Chinese)[彭冬生、冯玉春、王文欣、刘晓峰、施炜、牛憨笨 2006 55 3606]
[2]
[3]	Li X H, Zhong F, Qiu K, Yin Z J, Ji C J 2008 Chin. Phys. B 17 1360
[4]	Shahedipour F S, Wessels B W 2000 Appl. Phys. Lett. 76 3011
[5]
[6]	Gutierrez W A, Pommerrenig H D 1973 Appl. Phys. Lett. 22 292
[7]
[8]
[9]	Fisher D G., Olsen G H 1979 Journal of Applied Physics 50 2930
[10]
[11]	Allen G A 1971 Journal of Physics D: Applied Physics. 4 308
[12]
[13]	Spicer W E, Herrera-Gmez A 1993 Proc. SPIE. 2022 18
[14]	Elamrawi K A, Elsayed-Ali H E 1999 Journal of Physics D:Applied Physics. 32 251
[15]
[16]
[17]	Elamrawi K A, Hafez M A, Elsayed-Ali H E 1998 Journal of Applied Physics. 84 4568
[18]
[19]	Liu Z, Sun Y, Machuca F, Pianetta P, Spicer W E, Pease R F W 2003 Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures 21 1953
[20]	Machuca F 2003 Ph. D. Dissertation (Stanford:Stanford University)
[21]
[22]
[23]	Turnbull A A, Evans G B 1968 Journal of Physics D: Applied Physics 1 155
[24]	Fisher D G 1974 IEEE Transactions on Electron Devices ED-21 541
[25]
[26]	Stocker B J 1975 Surface Science. 47 501
[27]
[28]
[29]	Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese)[乔建良、田思、常本康、杜晓晴、高频 2009 58 5847]
[30]	Qiao J L, Chang B K, Qian Y S, Du X Q, Zhang Y J, Gao P, Wang X H, Guo X Y, Niu J, Gao Y T 2010 Acta Phys. Sin. 59 3577 (in Chinese)[乔建良、常本康、钱芸生、杜晓晴、张益军、高频、王晓晖、郭向阳、牛军、高有堂 2010 59 3577 ]
[31]
[32]	Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese)[乔建良、常本康、杜晓晴、牛军、邹继军 2010 59 2855]
[33]
[34]	Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L, Nihashi T 2002 IEEE J. Quantum Electron. 38 333
[35]
[36]	Uchiyama S, Takagi Y, Niigaki M, Kan H 2005 Appl. Phys. Lett. 86 103511
[37]
[38]	Siegmund O, Vallerga J, McPhate J, Malloy J, Tremsin A, Martin A, Ulmer M, Wessels B 2006 Nuclear Instruments and Methods in Physics Research A 567 89
[39]
[40]	Ulmer M P, Wessels W B, Shahedipour F S, Korotkov R Y, Joseph C, Nihashi T. 2001 Proc. SPIE 4288 246
[41]
[42]	Ulmer M P, Wessels B W, Han B, Gregie J, Tremsin A, Siegmund O H W 2003 Proc. SPIE 5164 144
[43]

施引文献

[1]	Peng D S, Feng Y C, Wang W X, Liu X F, Shi W, Niu H B 2006 Acta Phys. Sin. 55 3606 (in Chinese)[彭冬生、冯玉春、王文欣、刘晓峰、施炜、牛憨笨 2006 55 3606]
[2]
[3]	Li X H, Zhong F, Qiu K, Yin Z J, Ji C J 2008 Chin. Phys. B 17 1360
[4]	Shahedipour F S, Wessels B W 2000 Appl. Phys. Lett. 76 3011
[5]
[6]	Gutierrez W A, Pommerrenig H D 1973 Appl. Phys. Lett. 22 292
[7]
[8]
[9]	Fisher D G., Olsen G H 1979 Journal of Applied Physics 50 2930
[10]
[11]	Allen G A 1971 Journal of Physics D: Applied Physics. 4 308
[12]
[13]	Spicer W E, Herrera-Gmez A 1993 Proc. SPIE. 2022 18
[14]	Elamrawi K A, Elsayed-Ali H E 1999 Journal of Physics D:Applied Physics. 32 251
[15]
[16]
[17]	Elamrawi K A, Hafez M A, Elsayed-Ali H E 1998 Journal of Applied Physics. 84 4568
[18]
[19]	Liu Z, Sun Y, Machuca F, Pianetta P, Spicer W E, Pease R F W 2003 Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures 21 1953
[20]	Machuca F 2003 Ph. D. Dissertation (Stanford:Stanford University)
[21]
[22]
[23]	Turnbull A A, Evans G B 1968 Journal of Physics D: Applied Physics 1 155
[24]	Fisher D G 1974 IEEE Transactions on Electron Devices ED-21 541
[25]
[26]	Stocker B J 1975 Surface Science. 47 501
[27]
[28]
[29]	Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese)[乔建良、田思、常本康、杜晓晴、高频 2009 58 5847]
[30]	Qiao J L, Chang B K, Qian Y S, Du X Q, Zhang Y J, Gao P, Wang X H, Guo X Y, Niu J, Gao Y T 2010 Acta Phys. Sin. 59 3577 (in Chinese)[乔建良、常本康、钱芸生、杜晓晴、张益军、高频、王晓晖、郭向阳、牛军、高有堂 2010 59 3577 ]
[31]
[32]	Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese)[乔建良、常本康、杜晓晴、牛军、邹继军 2010 59 2855]
[33]
[34]	Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L, Nihashi T 2002 IEEE J. Quantum Electron. 38 333
[35]
[36]	Uchiyama S, Takagi Y, Niigaki M, Kan H 2005 Appl. Phys. Lett. 86 103511
[37]
[38]	Siegmund O, Vallerga J, McPhate J, Malloy J, Tremsin A, Martin A, Ulmer M, Wessels B 2006 Nuclear Instruments and Methods in Physics Research A 567 89
[39]
[40]	Ulmer M P, Wessels W B, Shahedipour F S, Korotkov R Y, Joseph C, Nihashi T. 2001 Proc. SPIE 4288 246
[41]
[42]	Ulmer M P, Wessels B W, Han B, Gregie J, Tremsin A, Siegmund O H W 2003 Proc. SPIE 5164 144
[43]

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