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使用射频磁控溅射技术制备了钼(Mo)膜，再利用硒化退火方式生成二硒化钼(MoSe2)薄膜。对MoSe2薄膜的表面形貌、晶体结构和光学带隙进行了表征和分析。结果显示，MoSe2薄膜的晶体结构与硒化温度(Ts)密切相关：随着硒化温度的升高，薄膜的平均晶粒尺寸先略减小后增大，且(002)晶面取向优先生长。MoSe2薄膜对短波长光(600nm左右)具有较低的吸收率。随着硒化温度升高，MoSe2的直接带隙波发生蓝移，光学带隙随之减小。研究表明，通过改变硒化温度可以有效调控MoSe2结构和光学带隙，为MoSe2薄膜在光学器件应用方面提供更多可能。In recent years, MoSe2, as a kind of transition metal dichalcogenides have been attracting a wide range of research interests due to its special crystal structure which exhibits different electrical and optical properties. The band gap of molybdenum diselenide can be manipulated by different layers, strain engineering, doping, or the formation of heterostructures, which makes it potentially advantageous in optoelectronic devices and photovoltaic applications. In this work, we investigate the effect of selenization temperature on the structure and optical properties of the MoSe2 films. Molybdenum (Mo) thin films were prepared by RF magnetron sputtering, and then MoSe2 thin films were generated by selenization annealing. The surface morphology, crystal structure, and optical bandgap of the MoSe2 thin films were characterized and analyzed using scanning electron microscopy, X-ray diffraction, and ultraviolet visible spectroscopy, respectively. The results show that the crystal structure of the MoSe2 thin films is closely related to the selenization temperature (Ts): with the increase of selenization temperature, the average grain size of the thin films decreases slightly and then increases rapidly (from 24.82 nm to 55.76 nm). Meanwhile, the (002) crystal plane of MoSe2 also exhibits preferential growth with increasing temperature. The MoSe2 thin films have a low absorption rate for short-wavelength light (around 600 nm). With the increase of selenization temperature, the bandgap wave of the MoSe2 thin films is blue-shifted, and the optical bandgap decreases. The reason is that different selenization temperatures cause changes in the lattice size of MoSe2, thereby affecting the spatial expansion of its electronic wave function. In addition, the structure and optical bandgap of MoSe2 can be effectively controlled by changing the selenization temperature, which provides more possibilities for the MoSe2 thin films in the application of optical devices.
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Keywords:
- MoSe2 thin film /
- Selenization temperature /
- Magnetron sputtering /
- Thin films structure /
- Optical bandgap
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