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Ge and Nb co-doped anatase TiO2 films are prepared by using radio frequency magnetron sputtering. The structures, resistivities and band gap properties of the films, which depend on Ge and Nb doping amounts, sputtering power and annealing temperature, are discussed. It is found that the band gap and resistivity of TiO2 film can be simultaneously tailored by co-doping with Ge and Nb. With doping volume fractions of 6% Nb and 20% Ge, the resistivity of the film can be reduced from 104 Ω/cm to 10-1 Ω/cm, and the band gap from 3.2 eV to 1.9 eV. After annealing, the Ge and Nb co-doped TiO2 film shows not only a lower resistivity but also a stronger absorption for visible and infrared light. As a result, Ge and Nb co-doped TiO2 film with adjustable band gap and resistivity can be prepared with magnetron sputtering by choosing proper Ge and Nb doping amounts and annealing conditions.
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Keywords:
- Ge-Nb-TiO2 film /
- resistivity /
- band gap /
- radio frequency magnetron sputtering
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[2] O'Hayre R, Nanu M, Schoonman J, Goossens A, Wang Q, Grätzel M 2006 Adv. Funct. Mater. 16 1566
[3] Lin H, Huang C P, Li W, Ni C, Ismat Shah S, Tseng Y H 2006 Appl. Catal. B: Environ. 68 1
[4] Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548
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[9] Umebayashi T, Yamaki T, Itoh H, Asai K 2002 Appl. Phys. Lett. 81 454
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[13] Chatterjee S, Goyal A, Ismat Shah S 2006 Mater. Lett. 60 3541
[14] Chatterjee S 2008 Solar Energy 82 95
[15] Gai Y Q, Li J B, Li S S, Xia J B, Wei S H 2009 Phys. Rev. Lett. 102 36402
[16] Zhang X J, Gao P, Liu Q J 2010 Acta Phys. Sin. 59 4930 (in Chinese) [张学军, 高攀, 柳清菊 2010 59 4930]
[17] Luo H, Takata T, Lee Y, Zhao J F, Domen K, Yan Y S 2004 Chem. Mater. 16 846
[18] Furubayashi Y, Hitosugi T, Yamamoto Y, Inana K, Kinoda G, Hirose Y, Shimada T, Hasegawa T 2005 Appl. Phys. Lett. 86 252101
[19] Hitosugi T, Yamada N, Nakao S, Kirose Y, hasegawa T 2010 Phys. Status Solidi A 207 1529
[20] Liu G A, Yang G J, Zheng F S 2007 Chin. J. Vacuum Sci. Technol. 27 254 (in Chinese) [刘贵昴, 杨贵进, 郑妃盛 2007 真空科学与技术学报 27 254]
[21] Ghosh T B, Dhabal S, Datta A K 2003 J. Appl. Phys. 94 4577
[22] Guo M L, Zhang X D, Liang C T 2011 Physica B: Condensed Matter 406 3354
[23] Tang H, Prasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 1994
[24] Sato Y, Akizuki H, Kamiyama T, Shigesato Y 2008 Thin Solid Films 516 5758
[25] Hitosugi T, Kamisaka H, Yamashita K, Nogawa H, Furubayashi Y, Nakao S, Yamada N, Chikamatsu A, Kumigashira H, Oshima M, Hirose Y, Shimada T, Hasegawa T 2008 Appl. Phys. Express 1 111203
[26] Hamberg I, Granqvist C G 1986 J. Appl. Phys. 60 123
[27] Hitosugi T, Yamada N, Nakao S, Hirose Y, Hasegawa T 2010 Phys. Status Solidi A 207 1529
[28] Khan A F, Mehmood M, Aslam M, Ismat Shah S 2010 J. Colloid Interf. Sci. 343 271
[29] Tang H, Prasad, Sanjines R, Schmid P, Levy F 1994 J. Appl. Phys. 75 2042
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[1] Bach U, Lupo D, Comte P, Moser J E, Weissörtel F, Salbeck J, Spreitzer H, Grätzel M 1998 Nature 395 583
[2] O'Hayre R, Nanu M, Schoonman J, Goossens A, Wang Q, Grätzel M 2006 Adv. Funct. Mater. 16 1566
[3] Lin H, Huang C P, Li W, Ni C, Ismat Shah S, Tseng Y H 2006 Appl. Catal. B: Environ. 68 1
[4] Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548
[5] Kurtz S R, Gordon R G 1997 Thin Solid Films 147 167
[6] Cui Y F, Yuan Z H Acta Phys. Sin. 55 5127 (in Chinese) [崔永锋, 袁志好 2006 55 5127]
[7] Bu J L, Jiang Z Y, Jiao S H 2012 Adv. Mater. Res. 415-417 2036
[8] Mwabora J M, Lindgren T, Avendano E, Jaramillo T F, Lu J, Lindquist S E, Granqvist C 2004 J. Phys. Chem. B 108 20193
[9] Umebayashi T, Yamaki T, Itoh H, Asai K 2002 Appl. Phys. Lett. 81 454
[10] Sakthivel S, Kisch H 2003 Angew. Chem. Int. Ed. 42 4908
[11] Wu X W, Wu D J, Liu X J 2010 Acta Phys. Sin. 59 4788 (in Chinese) [吴雪炜, 吴大建, 刘晓峻 2010 59 4788]
[12] Zhang Y, Tang C Q, Dai J 2005 Acta Phys. Sin. 54 323 (in Chinese) [张勇, 唐超群, 戴君 2005 54 323]
[13] Chatterjee S, Goyal A, Ismat Shah S 2006 Mater. Lett. 60 3541
[14] Chatterjee S 2008 Solar Energy 82 95
[15] Gai Y Q, Li J B, Li S S, Xia J B, Wei S H 2009 Phys. Rev. Lett. 102 36402
[16] Zhang X J, Gao P, Liu Q J 2010 Acta Phys. Sin. 59 4930 (in Chinese) [张学军, 高攀, 柳清菊 2010 59 4930]
[17] Luo H, Takata T, Lee Y, Zhao J F, Domen K, Yan Y S 2004 Chem. Mater. 16 846
[18] Furubayashi Y, Hitosugi T, Yamamoto Y, Inana K, Kinoda G, Hirose Y, Shimada T, Hasegawa T 2005 Appl. Phys. Lett. 86 252101
[19] Hitosugi T, Yamada N, Nakao S, Kirose Y, hasegawa T 2010 Phys. Status Solidi A 207 1529
[20] Liu G A, Yang G J, Zheng F S 2007 Chin. J. Vacuum Sci. Technol. 27 254 (in Chinese) [刘贵昴, 杨贵进, 郑妃盛 2007 真空科学与技术学报 27 254]
[21] Ghosh T B, Dhabal S, Datta A K 2003 J. Appl. Phys. 94 4577
[22] Guo M L, Zhang X D, Liang C T 2011 Physica B: Condensed Matter 406 3354
[23] Tang H, Prasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 1994
[24] Sato Y, Akizuki H, Kamiyama T, Shigesato Y 2008 Thin Solid Films 516 5758
[25] Hitosugi T, Kamisaka H, Yamashita K, Nogawa H, Furubayashi Y, Nakao S, Yamada N, Chikamatsu A, Kumigashira H, Oshima M, Hirose Y, Shimada T, Hasegawa T 2008 Appl. Phys. Express 1 111203
[26] Hamberg I, Granqvist C G 1986 J. Appl. Phys. 60 123
[27] Hitosugi T, Yamada N, Nakao S, Hirose Y, Hasegawa T 2010 Phys. Status Solidi A 207 1529
[28] Khan A F, Mehmood M, Aslam M, Ismat Shah S 2010 J. Colloid Interf. Sci. 343 271
[29] Tang H, Prasad, Sanjines R, Schmid P, Levy F 1994 J. Appl. Phys. 75 2042
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