Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator

Ma Wu-Ying; Lu Wu; Guo Qi; He Cheng-Fa; Wu Xue; Wang Xin; Cong Zhong-Chao; Wang Bo; Maria

doi:10.7498/aps.63.026101

Abstract

In order to investigate the dose rate effect and the radiation response of the voltage comparator, a group of bipolar voltage comparators are irradiated by 60Co at high-and low-dose rates under different bias conditions. The results show that many of the parameters for the voltage comparator subjected to ionization radiation, such as power current, input bias current, input offset voltage, and output voltage, are degraded to a certain extent; the irradiation response of the voltage comparator is severely affected by bias condition. What is more, the same type of circuits manufactured from different companies exhibit different dose rate effects; the reasons for the degradation are discussed by analyzing the experiment results. The mechanism for the formation of dose rate effect is also analyzed from the annealing characteristics. The results obtained in this paper are not only useful for the applications of the radiation hardness device, but also helpful for its design.

Keywords:

Authors and contacts

1.
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry of CAS, Urumqi 830011, China;
2.
University of Chinese Academy of Sciences, Beijing 100049, China

References

[1]	Enlow E W, Pease R L, Combs W, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342
[2]	Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[3]	Barnaby H J, Schrimpf R D, Pease R L, Cole P, Turflinger T, Krieg J, Titus J, Emily D, Gehlhausen M, Witczak S C, Maher M C, Van N D 1999 IEEE Trans. Nucl. Sci. 46 1666
[4]	Xi S B, Lu W, Ren D Y, Zhou D, Wen L, Sun J, Wu X 2011 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 61 236103]
[5]	Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Su P 2011 Acta Phys. Sin. 60 088501 (in Chinese) [翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 60 088501]
[6]	He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese) [何宝平, 姚志斌 2010 59 1985]
[7]	Nowlin R N, Fleetwood D M, Schrimpf R D, Peas R L, Combs W E 1993 IEEE Trans. Nucl. Sci. 40 1686
[8]	Xi S B, Lu W, Re D Y, Zhou D, Wen L, sun J, Wu X 2011 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 61 236103]
[9]	Johnston A H, Rax B G, Lee C I 1995 IEEE Trans. Nucl. Sci. 42 1650
[10]	Zhang H L, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Erkin, Cui S 2004 Chin. J. Semicond. 25 1675 (in Chinese) [张华林, 陆妩, 任迪远, 郭旗, 余学锋, 何承发, 艾尔肯, 崔帅 2004 半导体学报 25 1675]
[11]	Tong S B, Hua C Y 2003 Fundamentals of Aualog Electronics (Beijing: Higher Education Press) p175 (in Chinese) [童诗白, 华成英 2003 模拟电子技术基础 (北京: 高等教育出版社) 第175页]
[12]	Pershenkov V S, Maslov V B, Cherepko S V, Shvetzov-Shilovsky I N, Belyakov V V, Sogoyan A V, Rusanovsky V I, Ulimov V N, Emelianov V V, Nasibullin V S 1997 IEEE Trans. Nucl. Sci. 44 1840
[13]	Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 036106]
[14]	Wang Y Y, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Gao B 2011 Acta Phys. Sin. 60 096104 (in Chinese) [王义元, 陆妩, 任迪远, 郭旗, 余学峰, 何承发, 高博 2011 60 096104]
[15]	Boch J, Saigne F, Schrimpf R D, Vaille J R, Dusseau L, Lorfevre E 2006 IEEE Trans. Nucl. Sci. 53 3655
[16]	Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894
[17]	Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650
[18]	Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉, 杜磊, 庄奕琪, 包军林 2007 56 3400]
[19]	Boch J, Saigne F, Schrimpf R D, Fleetwood D M, Cizmarik R, Zander D 2004 IEEE Trans. Nucl. Sci. 51 2903
[20]	Fleetwood D M 2013 IEEE Trans. Nucl. Sci. 60 1706
[21]	Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学峰, 何承发 2009 58 5572]

Cited By

[1]	Enlow E W, Pease R L, Combs W, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342
[2]	Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[3]	Barnaby H J, Schrimpf R D, Pease R L, Cole P, Turflinger T, Krieg J, Titus J, Emily D, Gehlhausen M, Witczak S C, Maher M C, Van N D 1999 IEEE Trans. Nucl. Sci. 46 1666
[4]	Xi S B, Lu W, Ren D Y, Zhou D, Wen L, Sun J, Wu X 2011 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 61 236103]
[5]	Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Su P 2011 Acta Phys. Sin. 60 088501 (in Chinese) [翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 60 088501]
[6]	He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese) [何宝平, 姚志斌 2010 59 1985]
[7]	Nowlin R N, Fleetwood D M, Schrimpf R D, Peas R L, Combs W E 1993 IEEE Trans. Nucl. Sci. 40 1686
[8]	Xi S B, Lu W, Re D Y, Zhou D, Wen L, sun J, Wu X 2011 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 61 236103]
[9]	Johnston A H, Rax B G, Lee C I 1995 IEEE Trans. Nucl. Sci. 42 1650
[10]	Zhang H L, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Erkin, Cui S 2004 Chin. J. Semicond. 25 1675 (in Chinese) [张华林, 陆妩, 任迪远, 郭旗, 余学锋, 何承发, 艾尔肯, 崔帅 2004 半导体学报 25 1675]
[11]	Tong S B, Hua C Y 2003 Fundamentals of Aualog Electronics (Beijing: Higher Education Press) p175 (in Chinese) [童诗白, 华成英 2003 模拟电子技术基础 (北京: 高等教育出版社) 第175页]
[12]	Pershenkov V S, Maslov V B, Cherepko S V, Shvetzov-Shilovsky I N, Belyakov V V, Sogoyan A V, Rusanovsky V I, Ulimov V N, Emelianov V V, Nasibullin V S 1997 IEEE Trans. Nucl. Sci. 44 1840
[13]	Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 036106]
[14]	Wang Y Y, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Gao B 2011 Acta Phys. Sin. 60 096104 (in Chinese) [王义元, 陆妩, 任迪远, 郭旗, 余学峰, 何承发, 高博 2011 60 096104]
[15]	Boch J, Saigne F, Schrimpf R D, Vaille J R, Dusseau L, Lorfevre E 2006 IEEE Trans. Nucl. Sci. 53 3655
[16]	Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894
[17]	Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650
[18]	Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉, 杜磊, 庄奕琪, 包军林 2007 56 3400]
[19]	Boch J, Saigne F, Schrimpf R D, Fleetwood D M, Cizmarik R, Zander D 2004 IEEE Trans. Nucl. Sci. 51 2903
[20]	Fleetwood D M 2013 IEEE Trans. Nucl. Sci. 60 1706
[21]	Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学峰, 何承发 2009 58 5572]

[1]	Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An. Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica, 2018, 67(16): 166101. doi: 10.7498/aps.67.20180829
[2]	Li Xiao-Long, Lu Wu, Wang Xin, Guo Qi, He Cheng-Fa, Sun Jing, Yu Xin, Liu Mo-Han, Jia Jin-Cheng, Yao Shuai, Wei Xin-Yu. Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods. Acta Physica Sinica, 2018, 67(9): 096101. doi: 10.7498/aps.67.20180027
[3]	Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan. Radiation effect and degradation mechanism in 65 nm CMOS transistor. Acta Physica Sinica, 2018, 67(14): 146103. doi: 10.7498/aps.67.20172542
[4]	Liu Hai-Jun, Tian Xiao-Bo, Li Qing-Jiang, Sun Zhao-Lin, Diao Jie-Tao. Research on radiation damage in titanium oxide memristors by Monte Carlo method. Acta Physica Sinica, 2015, 64(7): 078401. doi: 10.7498/aps.64.078401
[5]	Cong Zhong-Chao, Yu Xue-Feng, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Sun Jing, Wang Bo, Ma Wu-Ying, Ma Li-Ya, Zhou Hang. Online and offline test method of total dose radiation damage on static random access memory. Acta Physica Sinica, 2014, 63(8): 086101. doi: 10.7498/aps.63.086101
[6]	Wang Yu-Zhen, Ma Ying, Zhou Yi-Chun. Molecular dynamics study of epitaxial compressive strain influence on the radiation resistance of BaTiO3 ferroelectrics. Acta Physica Sinica, 2014, 63(24): 246101. doi: 10.7498/aps.63.246101
[7]	Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke. The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors. Acta Physica Sinica, 2014, 63(11): 116101. doi: 10.7498/aps.63.116101
[8]	Zhang Xing-Yao, Guo Qi, Lu Wu, Zhang Xiao-Fu, Zheng Qi-Wen, Cui Jiang-Wei, Li Yu-Dong, Zhou Dong. Serial ferroelectric memory ionizing radiation effects and annealing characteristics. Acta Physica Sinica, 2013, 62(15): 156107. doi: 10.7498/aps.62.156107
[9]	Ma Guo-Liang, Li Xing-Ji, Liu Hai, Liu Chao-Ming, Yang Jian-Qun, He Shi-Yu. Effect of grain size on energy deposition process in Ni metal during 1 MeV electron irradiation. Acta Physica Sinica, 2013, 62(9): 091401. doi: 10.7498/aps.62.091401
[10]	Li Xing-Ji, Liu Chao-Ming, Sun Zhong-Liang, Lan Mu-Jie, Xiao Li-Yi, He Shi-Yu. Radiation damage induced by various particles on CC4013 devices. Acta Physica Sinica, 2013, 62(5): 058502. doi: 10.7498/aps.62.058502
[11]	Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing. Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101. doi: 10.7498/aps.61.246101
[12]	Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702. doi: 10.7498/aps.60.068702
[13]	Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo. Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica, 2011, 60(9): 096104. doi: 10.7498/aps.60.096104
[14]	Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica, 2009, 58(8): 5572-5577. doi: 10.7498/aps.58.5572
[15]	Fan Long, Hao Yue. The effect of radiation induced strain relaxation on electric performance of AlmGa1－mN/GaN HEMT. Acta Physica Sinica, 2007, 56(6): 3393-3399. doi: 10.7498/aps.56.3393
[16]	Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica, 2006, 55(5): 2476-2481. doi: 10.7498/aps.55.2476
[17]	He Bao-Ping, Chen Wei, Wang Gui-Zhen. A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica, 2006, 55(7): 3546-3551. doi: 10.7498/aps.55.3546
[18]	He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong. Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica, 2004, 53(9): 3125-3129. doi: 10.7498/aps.53.3125
[19]	MU WEI-BING, CHEN PAN-XUN. MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE. Acta Physica Sinica, 2001, 50(2): 189-192. doi: 10.7498/aps.50.189
[20]	GUO HONG-XIA, CHEN YU-SHENG, ZHANG YI-MEN, ZHOU HUI, GONG JIAN-CHENG, HAN FU-BIN, GUAN YING, WU GUO-RONG. STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS. Acta Physica Sinica, 2001, 50(12): 2279-2283. doi: 10.7498/aps.50.2279

Catalog

Vol. 63, Issue 2 - 2014-01-20

Metrics

Abstract views: 6133
PDF Downloads: 794
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板