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Ferroelectric random memory was irradiated and annealed by 60Co-rays, total ionizing dose (TID) failure mechanism and annealing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing.
[1] Philpy S C, Kamp D A, DeVilbiss A D, Isacson A F, Derbenwick G F 2000 Aerospace Conference Proceedings Big Sky, MT, March 18-25, 2000 p377
[2] Verbeck C, Thomson C, Bagneux G P 1993 Radiation and its Effects on Components and Systems St Malo, September 13-16, 1993 P166
[3] MacLeod T C, Sims W H, Varnavas K A, Sayyah R, Ho F D 2009 Non-Volatile Memory Technology Symposium (NVMTS) Portland OR, October 25-28, 2009 P24
[4] Schwank J R, Nasby R D, Miller S L, Rodgers M S, Dressendorfer P V 1990 Nuclear Science 37 1703
[5] Nguyen D N, Pasadena C A 2001 Radiation Effects Data Workshop Vancouver BC, July 16-20, 2001 p57
[6] Zanata M, Wrachien N, Cester A 2008 Nuclear Science 52 3237
[7] Tang C L, Cai C C, Lou L F, Lou X Q 2007 Materials Review 8 33 (in Chinese) [唐重林, 柴常春, 娄利飞, 楼晓强 2007 材料导报 8 33]
[8] Li Y S, Ma Y, Zhou Y C 2009 Applied Physics Letters 94 42903
[9] Lou L F, Yang Y T, Chai C C, Gao F, Tang C L 2007 High Power Laser And Part Icle Beams 19 2091 (in Chinese) [娄利飞, 杨银堂, 柴常春, 高峰, 唐重林 2007 强激光与粒子束 19 2091]
[10] Cai D L 2008 Ph.D. Dissertation (Chendu: Unversity of Electronic Science and technology of China) (in Chinese) [蔡道林 2008 博士学位论文 (成都: 电子科技大学)]
[11] Scott J F (translated by Zhu J S) 2004 Ferroelectric memory (1st Ed.) (Beijing: Tsinghua University Press) p78, 82 (in Chinese) [斯科特著 (朱劲松译) 2004 铁电存储器 (北京: 清华大学出版社) 第78, 82页]
[12] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学峰, 何承发 2009 58 5572]
[13] Mcwhorter P J, Miller S L, Miller W M 1990 Nuclear Science 37 1682
[14] Vorotilov K A, Sigov A S 2012 Physics of the Solid State 54 894
[15] Fan C, Glen F U.S. Patent 6376259B1 [2002-04-23]
[16] Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 436 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 436]
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[1] Philpy S C, Kamp D A, DeVilbiss A D, Isacson A F, Derbenwick G F 2000 Aerospace Conference Proceedings Big Sky, MT, March 18-25, 2000 p377
[2] Verbeck C, Thomson C, Bagneux G P 1993 Radiation and its Effects on Components and Systems St Malo, September 13-16, 1993 P166
[3] MacLeod T C, Sims W H, Varnavas K A, Sayyah R, Ho F D 2009 Non-Volatile Memory Technology Symposium (NVMTS) Portland OR, October 25-28, 2009 P24
[4] Schwank J R, Nasby R D, Miller S L, Rodgers M S, Dressendorfer P V 1990 Nuclear Science 37 1703
[5] Nguyen D N, Pasadena C A 2001 Radiation Effects Data Workshop Vancouver BC, July 16-20, 2001 p57
[6] Zanata M, Wrachien N, Cester A 2008 Nuclear Science 52 3237
[7] Tang C L, Cai C C, Lou L F, Lou X Q 2007 Materials Review 8 33 (in Chinese) [唐重林, 柴常春, 娄利飞, 楼晓强 2007 材料导报 8 33]
[8] Li Y S, Ma Y, Zhou Y C 2009 Applied Physics Letters 94 42903
[9] Lou L F, Yang Y T, Chai C C, Gao F, Tang C L 2007 High Power Laser And Part Icle Beams 19 2091 (in Chinese) [娄利飞, 杨银堂, 柴常春, 高峰, 唐重林 2007 强激光与粒子束 19 2091]
[10] Cai D L 2008 Ph.D. Dissertation (Chendu: Unversity of Electronic Science and technology of China) (in Chinese) [蔡道林 2008 博士学位论文 (成都: 电子科技大学)]
[11] Scott J F (translated by Zhu J S) 2004 Ferroelectric memory (1st Ed.) (Beijing: Tsinghua University Press) p78, 82 (in Chinese) [斯科特著 (朱劲松译) 2004 铁电存储器 (北京: 清华大学出版社) 第78, 82页]
[12] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学峰, 何承发 2009 58 5572]
[13] Mcwhorter P J, Miller S L, Miller W M 1990 Nuclear Science 37 1682
[14] Vorotilov K A, Sigov A S 2012 Physics of the Solid State 54 894
[15] Fan C, Glen F U.S. Patent 6376259B1 [2002-04-23]
[16] Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 436 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 436]
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