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During serving in orbit, spacecraft will be affected by the radiation environment of the space high-energy charged particles, leading to the performance degradation or even malfunctions of electronic components. The complementary metal oxide semiconductor (CMOS) devices are sensitive to ionization damage. Therefore, it is valuable to research the mechanism of radiation effects on CMOS devices, and is significant to engineering and theory. The CC4013 CMOS integrated circuits are irradiated with 60 MeV Br ions, 5 MeV protons and 1 MeV electrons. Based on the data calculated by Geant4 code, the ionizing absorbed dose induced by 60 MeV Br ions is greatest, and the ionizing absorbed dose induced by 1 MeV electrons is lowest. The degradation of CC4013 device during the irradiation test is in-situ measured with Keithley 4200-SCS semiconductor characteristic system. From the experimental results, the threshold voltage degradation in CC4013 under an exposure of 1 MeV electrons is greatest at the same dose, a little lower under 5 MeV protons, and lowest under 60 MeV Br ions.
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Keywords:
- CMOS device /
- high-energy charged particle /
- ionizing radiation /
- radiation damage
[1] Liu Z X 2005 Space Physics (Harbin: Harbin Institute of Technology Press) p95 (in Chinese) [刘振兴 2005 太空物理学 (哈尔滨: 哈尔滨工业大学出版社) 第95页]
[2] Velazco R, Fouillat P, Reis R 2007 Radiation Effects on Embedded Systems (Berlin: Springer) p1
[3] Archubi C D, Eckardt J C, Lantschner G H, Arista N R 2006 Physical Review A 73 1
[4] Ma T P, Dressendorfer P V 1991 Ionizing Radiation Effects in MOS Devices and Circuits (New York: John Wiley and Sons) p91
[5] Chen P X 2005 Radiation effects of semiconductor devices and integrated circuits (Beijing: National Defence Industry Press) p28 (in Chinese) [陈盘训 2005 半导体器件和集成电路的辐射效应 (北京: 国防工业出版社) 第28页]
[6] Li X J, Geng H B, Liu C M, Zhao Z M, Lan M J, Yang D Z, He S Y 2010 IEEE Trans. Nucl. Sci. 57 831
[7] Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103
[8] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华, 杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 58 4090]
[9] He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese) [何宝平, 姚志斌 2010 59 1985]
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[1] Liu Z X 2005 Space Physics (Harbin: Harbin Institute of Technology Press) p95 (in Chinese) [刘振兴 2005 太空物理学 (哈尔滨: 哈尔滨工业大学出版社) 第95页]
[2] Velazco R, Fouillat P, Reis R 2007 Radiation Effects on Embedded Systems (Berlin: Springer) p1
[3] Archubi C D, Eckardt J C, Lantschner G H, Arista N R 2006 Physical Review A 73 1
[4] Ma T P, Dressendorfer P V 1991 Ionizing Radiation Effects in MOS Devices and Circuits (New York: John Wiley and Sons) p91
[5] Chen P X 2005 Radiation effects of semiconductor devices and integrated circuits (Beijing: National Defence Industry Press) p28 (in Chinese) [陈盘训 2005 半导体器件和集成电路的辐射效应 (北京: 国防工业出版社) 第28页]
[6] Li X J, Geng H B, Liu C M, Zhao Z M, Lan M J, Yang D Z, He S Y 2010 IEEE Trans. Nucl. Sci. 57 831
[7] Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103
[8] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华, 杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 58 4090]
[9] He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese) [何宝平, 姚志斌 2010 59 1985]
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