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对一款商用串口I2C型铁电存储器进行了60Co 辐射和退火实验, 研究了铁电存储器的总剂量效应和退火特性. 使用了超大规模集成电路测试系统测试了铁电存储器的DC, AC, 功能参数, 分析了辐射敏感参数在辐射和退火过程中的变化规律. 实验结果表明: 总剂量辐射在器件内产生大量氧化物陷阱电荷, 造成了铁电存储器外围控制电路MOS管阈值向负向漂移, 氧化物陷阱电荷引入附加电场使铁电薄膜受肖特基发射或空间电荷限制电流的作用, 产生辐射感生漏电流. 由于浅能级亚稳态的氧化物陷阱电荷数量上多于深能级氧化物陷阱电荷, 使得器件功能和辐射敏感参数在常温退火过程中快速恢复.Ferroelectric random memory was irradiated and annealed by 60Co-rays, total ionizing dose (TID) failure mechanism and annealing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing.
[1] Philpy S C, Kamp D A, DeVilbiss A D, Isacson A F, Derbenwick G F 2000 Aerospace Conference Proceedings Big Sky, MT, March 18-25, 2000 p377
[2] Verbeck C, Thomson C, Bagneux G P 1993 Radiation and its Effects on Components and Systems St Malo, September 13-16, 1993 P166
[3] MacLeod T C, Sims W H, Varnavas K A, Sayyah R, Ho F D 2009 Non-Volatile Memory Technology Symposium (NVMTS) Portland OR, October 25-28, 2009 P24
[4] Schwank J R, Nasby R D, Miller S L, Rodgers M S, Dressendorfer P V 1990 Nuclear Science 37 1703
[5] Nguyen D N, Pasadena C A 2001 Radiation Effects Data Workshop Vancouver BC, July 16-20, 2001 p57
[6] Zanata M, Wrachien N, Cester A 2008 Nuclear Science 52 3237
[7] Tang C L, Cai C C, Lou L F, Lou X Q 2007 Materials Review 8 33 (in Chinese) [唐重林, 柴常春, 娄利飞, 楼晓强 2007 材料导报 8 33]
[8] Li Y S, Ma Y, Zhou Y C 2009 Applied Physics Letters 94 42903
[9] Lou L F, Yang Y T, Chai C C, Gao F, Tang C L 2007 High Power Laser And Part Icle Beams 19 2091 (in Chinese) [娄利飞, 杨银堂, 柴常春, 高峰, 唐重林 2007 强激光与粒子束 19 2091]
[10] Cai D L 2008 Ph.D. Dissertation (Chendu: Unversity of Electronic Science and technology of China) (in Chinese) [蔡道林 2008 博士学位论文 (成都: 电子科技大学)]
[11] Scott J F (translated by Zhu J S) 2004 Ferroelectric memory (1st Ed.) (Beijing: Tsinghua University Press) p78, 82 (in Chinese) [斯科特著 (朱劲松译) 2004 铁电存储器 (北京: 清华大学出版社) 第78, 82页]
[12] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学峰, 何承发 2009 58 5572]
[13] Mcwhorter P J, Miller S L, Miller W M 1990 Nuclear Science 37 1682
[14] Vorotilov K A, Sigov A S 2012 Physics of the Solid State 54 894
[15] Fan C, Glen F U.S. Patent 6376259B1 [2002-04-23]
[16] Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 436 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 436]
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[1] Philpy S C, Kamp D A, DeVilbiss A D, Isacson A F, Derbenwick G F 2000 Aerospace Conference Proceedings Big Sky, MT, March 18-25, 2000 p377
[2] Verbeck C, Thomson C, Bagneux G P 1993 Radiation and its Effects on Components and Systems St Malo, September 13-16, 1993 P166
[3] MacLeod T C, Sims W H, Varnavas K A, Sayyah R, Ho F D 2009 Non-Volatile Memory Technology Symposium (NVMTS) Portland OR, October 25-28, 2009 P24
[4] Schwank J R, Nasby R D, Miller S L, Rodgers M S, Dressendorfer P V 1990 Nuclear Science 37 1703
[5] Nguyen D N, Pasadena C A 2001 Radiation Effects Data Workshop Vancouver BC, July 16-20, 2001 p57
[6] Zanata M, Wrachien N, Cester A 2008 Nuclear Science 52 3237
[7] Tang C L, Cai C C, Lou L F, Lou X Q 2007 Materials Review 8 33 (in Chinese) [唐重林, 柴常春, 娄利飞, 楼晓强 2007 材料导报 8 33]
[8] Li Y S, Ma Y, Zhou Y C 2009 Applied Physics Letters 94 42903
[9] Lou L F, Yang Y T, Chai C C, Gao F, Tang C L 2007 High Power Laser And Part Icle Beams 19 2091 (in Chinese) [娄利飞, 杨银堂, 柴常春, 高峰, 唐重林 2007 强激光与粒子束 19 2091]
[10] Cai D L 2008 Ph.D. Dissertation (Chendu: Unversity of Electronic Science and technology of China) (in Chinese) [蔡道林 2008 博士学位论文 (成都: 电子科技大学)]
[11] Scott J F (translated by Zhu J S) 2004 Ferroelectric memory (1st Ed.) (Beijing: Tsinghua University Press) p78, 82 (in Chinese) [斯科特著 (朱劲松译) 2004 铁电存储器 (北京: 清华大学出版社) 第78, 82页]
[12] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学峰, 何承发 2009 58 5572]
[13] Mcwhorter P J, Miller S L, Miller W M 1990 Nuclear Science 37 1682
[14] Vorotilov K A, Sigov A S 2012 Physics of the Solid State 54 894
[15] Fan C, Glen F U.S. Patent 6376259B1 [2002-04-23]
[16] Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 436 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 436]
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