Growth of vanadium dioxide thin films on Pt metal film and the electrically-driven metal&#8211;insulator transition characteristics of them

Qiu Dong-Hong; Wen Qi-Ye; Yang Qing-Hui; Chen Zhi; Jing Yu-Lan; Zhang Huai-Wu

doi:10.7498/aps.62.217201

Abstract

High-quality VO2 thin films are deposited on the metal platinum (Pt) electrode buffered by silicon dioxide (SiO2) using radio frequency magnetron sputtering. The effect of the thickness of SiO2 on the the crystal structure, morphology and metal-insulator transition (MIT) performance of the films are discussed. Results show that SiO2 buffer layer with a thickness of 0.2 μm can effectively eliminate huge stress between the VO2 film and the metal film; and the VO2 thin film with the distinct MIT are deposited. When the buffer layer reaches more than 0.7 μm, the VO2 film has a distinct (011) preferred orientation, the smooth surface and compact nanostructure, and the resistance change reaches more than three orders of magnitude. At the same time, Pt-SiO2/VO2-Au sandwiched structure is achieved to test the current versus voltage curves, in which can be seen several distinct steps of current caused by the voltage perpendicular to the plane of a VO2 film. The result confirms the electrically-driven metal-insulator transition. Due to the high-quality VO2 and the flexible device structure, the VO2/Pt-SiO2 can be widely used for large-scale integrated electronic control devices.

Keywords:

vanadium dioxide film /
phase transition /
electrically-driven metal-insulator transition /
threshold voltage

Authors and contacts

1.
State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2.
National Key Laboratory of Science and Technology on Communication, University of Electronic, Science and Technology of China, Chengdu 610054, China
Funds: Project supported by the National Nature Science Foundation of China (Grant No. 61131005), Key Project of Chinese Ministry of Education (Grant No. 313013), the National High Technology Research and Development Program 863 (Grant No. 2011AA010204), the "New Century Excellent Talent Foundation" of China (Grant No. NCET-11-0068), the Sichuan Youth S & T foundation, China (Grant No. 2011JQ0001), the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20110185130002), the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J034), and the CAEP THz Science and Technology Foundation (Grant No. CAEPTHZ201207).

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Cited By

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34
[2]	Lopez R, Boatner L A, Haynes T E, Haglund Jr R F, Feldman L C 2004 Appl. Phys. Lett. 85 1410
[3]	Kim H T, Lee Y W, Kim B J, Chae B G, Yun S J, Kang K Y, Han K J, Yee K J, Lim Y S 2006 Phys. Rev. Lett. 97 266401
[4]	Wen Q Y, Zhang H W, Yang Q H, Xie Y X, Chen K, Liu Y L 2010 Appl. Phys. Lett. 97 021111
[5]	Wang X J, Liu Y Y, Li D H, Feng B H, He Z W, Qi Z 2013 Chin. Phys. B 22 066803
[6]	Sun D D, Chen Z, Wen Q Y, Qiu D H, Lai W E, Dong K, Zhao B H, Zhang H W 2013 Acta Phys. Sin. 62 017202 (in Chinese) [孙丹丹, 陈智, 文岐业, 邱东鸿, 赖伟恩, 董凯, 赵碧辉, 张怀武 2013 62 017202]
[7]	Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.: Condens. Matter 12 8837
[8]	Seo G, Kim B -J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Device Lett. 32 1582
[9]	Ha S D, Zhou Y, Fisher C J, Ramanathan S, Treadway J P 2013 J. Appl. Phys. 113 184501
[10]	Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
[11]	Lee Y W, Kim B J, Lim J W, Yun S J, Choi S, Chae B G, Kim G, Kim H T 2008 Appl. Phys. Lett. 92 162903
[12]	Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, Bernussi A, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 053533
[13]	Wang C L, Tian Z, Xing Q R, Gu J Q, Liu F, Hu M L, Chai L, Wang Q Y 2010 Acta Phys. Sin. 59 7857 (in Chinese) [王昌雷, 田震, 邢岐荣, 谷建强, 刘丰, 胡明列, 柴路, 王清月 2010 59 7857]
[14]	Li J, Dho J 2011 Appl. Phys. Lett. 99 231909
[15]	Luo Z F, Wu Z M, Xu X D, Wang T, Jiang Y D 2010 Chin. Phys. B 19 106103
[16]	Lee M J, Park Y, Suh D S, Lee E H, Seo S, Kim D C, Jung R, Kang B S, Ahn S E, Lee C B, Seo D H, Cha Y K, Yoo I K, Kim J S, Park B H 2007 Adv. Mater. 19 3919
[17]	Zhou Y, Chen X, Ko C, Yang Z, Ramanathan S 2013 IEEE Electron Device Lett. 34 220
[18]	Okimura K, Suruz Mian Md 2012 J. Vac. Sci. Technol. A 30 051502
[19]	Grbovic D, Lavrik N V, Rajic S, Datskos P G 2008 J. Appl. Phys. 104 054508
[20]	Ji Y D, Pan T S, Bi Z, Liang W Z, Zhang Y, Zeng H Z, Wen Q Y, Zhang H W, Jia Q X, Lin Y 2012 Appl. Phys. Lett. 101 071902
[21]	Narayan J, Bhosle V M 2006 J. Appl. Phys. 100 103524
[22]	Kim H T, Chae B G, Youn D H, Maeng S L, Kim G, Kang K Y, Lim Y S 2004 New J. Phys. 6 52
[23]	Leroy J, Crunteanu A, Bessaudou A, Cosset F, Champeaux C, Orlianges J C 2012 Appl. Phys. Lett. 100 213507
[24]	Crunteanu A, Givernaud J, Leroy J, Mardivirin D, Champeaux C, Orlianges J C, Catherinot A, Blondy P 2010 Sci. Technol. Adv. Mater. 11 065002
[25]	Ruzmetov D, Gopalakrishnan G, Deng J, Narayanamurti V, Ramanathan S 2009 J. Appl. Phys. 106 083702
[26]	Ko C, Ramanathan S 2008 Appl. Phys. Lett. 93 252101

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Vol. 62, Issue 21 - 2013-11-05

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Growth of vanadium dioxide thin films on Pt metal film and the electrically-driven metal–insulator transition characteristics of them

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Growth of vanadium dioxide thin films on Pt metal film and the electrically-driven metal–insulator transition characteristics of them

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