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Vanadium thin films are deposited by magnetron sputter. Then VOx thin films are fabricated by a series of rapid thermal processes (RTPs) in pure oxygen environment. X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope are employed to analyze crystalline structure of the thin film, phase composition and surface morphology. Electrical and optical properties of VOx thin film are measured by the four-point probe method and THz time-domain spectroscopy technology, respectively. The results reveale that the VOx thin film which is composed mainly of V2O5 and VO2 has the properties of phase transition to a certain extent within the RTP condition of heat preservation temperature and time, and the overall valence of vanadium remains unchanged, no matter whether the RTP condition is the same. The best performance VOx thin film can be obtained under the moderate RTP condition, such as 500 ℃ 25 s, and this film can also modulate the THz wave.
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Keywords:
- vanadium oxide thin films /
- phase transition /
- rapid thermal process /
- THz modulation
[1] Morin F J 1959 Phys. Rev. Lett. 3 34
[2] Zylbersztejn A, Mott N F 1975 Phys. Rev. B 11 4383
[3] Chen C H, Yi X J, Zhao X R, Xiong B F 2001 Sens. Actuators. A 90 212
[4] Chen Z, Gao Y F, Kang L T, Jing D, Zhang Z T, Luo H J, Miao H Y, Tan G Q 2011 Sol. Energy Mater. Sol. Cells 95 2677
[5] Ben-Messaoud T, Landry G, Gariepy J P, Ramamoorthy B, Ashrit P V, Hache A 2008 Opt. Commun. 281 6024
[6] Lee J S, Ortolani M, Schade U 2007 Appl. Phys. Lett. 91 133509
[7] Jepsen P U, Fischer B M, Thoman A, Helm H, Suh J Y, Lopez R, Haglund R F 2006 Phys. Rev. B 74 205103
[8] Aikuhaili M F, Khawaja E E, Ingram D C, Durrani S M A 2004 Thin Solid Films 460 30
[9] L Y Q, Hu M, Wu M, Liu Z G 2007 Surf. Coat. Technol. 201 4969
[10] Kumar R T R, Karunagaran B, Mangalaraj D, Narayandass S K, Manoravi P, Joseph M, Gopal V 2003 Sens. Actuators. A 107 62
[11] Yin D C, Xu N K, Zhang J Y, Zheng X L 1996 Mater. Res. Bull. 31 335
[12] Hou S B, Hu M, L Z J, Liang J R, Chen T 2012 Chin. J. Lasers 39 0107002 (in Chinese) [后顺保, 胡明, 吕志军, 梁继然, 陈涛 2012 中国激光 39 0107002 ]
[13] L Z J, Hu M, Chen T, Hou S B, Liang J R 2012 Micronanoelectron. Technol. 49 27 (in Chinese) [吕志军, 胡明, 陈涛, 后顺保, 梁继然 2012 微纳电子技术 49 27]
[14] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C, El Khakani M A 2005 Appl. Phys. Lett. 87 051910
[15] Alov N, Kutsko D, Spirovova I, Bastl Z 2006 Surf. Sci. 600 1628
[16] Liang J R, Hu M, Wang X D, Li G K, Ji A, Yang F H, Liu J, Wu N J, Chen H D 2009 Acta Phys.-Chim. Sin. 25 1523 (in Chinese) [梁继然, 胡明, 王晓东, 李贵柯, 季安, 杨富华, 刘剑, 吴南健, 陈弘达 2009 物理化学学报 25 1523]
[17] Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902
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[1] Morin F J 1959 Phys. Rev. Lett. 3 34
[2] Zylbersztejn A, Mott N F 1975 Phys. Rev. B 11 4383
[3] Chen C H, Yi X J, Zhao X R, Xiong B F 2001 Sens. Actuators. A 90 212
[4] Chen Z, Gao Y F, Kang L T, Jing D, Zhang Z T, Luo H J, Miao H Y, Tan G Q 2011 Sol. Energy Mater. Sol. Cells 95 2677
[5] Ben-Messaoud T, Landry G, Gariepy J P, Ramamoorthy B, Ashrit P V, Hache A 2008 Opt. Commun. 281 6024
[6] Lee J S, Ortolani M, Schade U 2007 Appl. Phys. Lett. 91 133509
[7] Jepsen P U, Fischer B M, Thoman A, Helm H, Suh J Y, Lopez R, Haglund R F 2006 Phys. Rev. B 74 205103
[8] Aikuhaili M F, Khawaja E E, Ingram D C, Durrani S M A 2004 Thin Solid Films 460 30
[9] L Y Q, Hu M, Wu M, Liu Z G 2007 Surf. Coat. Technol. 201 4969
[10] Kumar R T R, Karunagaran B, Mangalaraj D, Narayandass S K, Manoravi P, Joseph M, Gopal V 2003 Sens. Actuators. A 107 62
[11] Yin D C, Xu N K, Zhang J Y, Zheng X L 1996 Mater. Res. Bull. 31 335
[12] Hou S B, Hu M, L Z J, Liang J R, Chen T 2012 Chin. J. Lasers 39 0107002 (in Chinese) [后顺保, 胡明, 吕志军, 梁继然, 陈涛 2012 中国激光 39 0107002 ]
[13] L Z J, Hu M, Chen T, Hou S B, Liang J R 2012 Micronanoelectron. Technol. 49 27 (in Chinese) [吕志军, 胡明, 陈涛, 后顺保, 梁继然 2012 微纳电子技术 49 27]
[14] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C, El Khakani M A 2005 Appl. Phys. Lett. 87 051910
[15] Alov N, Kutsko D, Spirovova I, Bastl Z 2006 Surf. Sci. 600 1628
[16] Liang J R, Hu M, Wang X D, Li G K, Ji A, Yang F H, Liu J, Wu N J, Chen H D 2009 Acta Phys.-Chim. Sin. 25 1523 (in Chinese) [梁继然, 胡明, 王晓东, 李贵柯, 季安, 杨富华, 刘剑, 吴南健, 陈弘达 2009 物理化学学报 25 1523]
[17] Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902
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