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Electric field induced semiconductor-metal transition characteristics of VO2 indicate extensive application prospects in smart window,storage device,intelligent radiator,signal generator,optical switch,etc.In order to explore the electric field induced semiconductor-metal transition characteristics of VO2,AZO/VO2/AZO sandwiched structure is prepared to study the problem of optical modulation under the action of applied electrical drive.Firstly,V thin film is fabricated by direct current magnetron sputtering on a ZnO-doped Al (AZO) conductive glass substrate.The operating pressure during sputtering is kept at 3.610-1 Pa,and the sputtering current and voltage are 2 A and 400 V,respectively.The VO2/AZO composite film is prepared by annealing under the air atmosphere for 3.5 h at 400℃.Secondly,another AZO conductive film is deposited by radio frequency magnetron sputtering on the top of the VO2 thin film.Thirdly, Pt electrodes are patterned on the bottom and top of AZO conductive glass by using photolithography and chemical etching processes,and finally AZO/VO2/AZO sandwiched structure is achieved.The crystal structure of the thin film is analyzed by X-ray diffraction (XRD) apparatus.The surface morphologies of the samples were studied by atomic force microscope (AFM).X-ray photoelectron spectroscopy (XPS) system is used to study the relative quantity of the surface elements.The current-voltage characteristics are measured by semiconductor parameter analyzer.The optical properties of the AZO/VO2/AZO sandwiched structure are determined by spectrophotometer.XRD results show that the VO2 thin film has a distinct (011) preferred orientation and well-crystallized structure.AFM results indicate that the VO2 thin film has compact nanostructure and smooth surface with a surface roughness of 5.975 nm.XPS results reveal that the VO2 thin film has high purity.Optical transmittance curves show that the maximum change of the optical transmittance measured from VO2/AZO composite film during the phase transformation is 24% at 800-2300 nm,while the maximum modulation of the transmittance of AZO/VO2/AZO sandwiched structure reaches 31% in the same wavelength range. When applying different voltages to AZO/VO2/AZO sandwiched structure at different ambient temperatures,the current abrupt change can be seen at the threshold voltage.The threshold voltage of the thin film phase transition is 8.1 V at 20℃,while the threshold voltage is 5.9 V at 40℃.However,the threshold voltage is zero at 60℃,which indicates that the semiconductor-metal transition of the VO2 thin film happens at that temperature.It can be found that the higher the ambient temperature,the lower the threshold voltage is.AZO/VO2/AZO sandwiched structure has stable properties with simple preparation technology,and its modulation property meets the performance requirements for electro-optic modulator under applying the electrical drive,which is expected to be applied to the integrated infrared modulator.
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Keywords:
- AZO/VO2/AZO /
- optical transmittance /
- phase transition /
- threshold voltage
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[2] Lee M H, Kim M G, Song H K 1996 Thin Solid Films 290 30
[3] Maaza M, Hamidi D, Gibaud A, Kana J B K 2011 ICTON 29 1
[4] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C 2005 Appl. Phys. Lett. 87 51910
[5] Chen C H, Fan Z Y 2009 Appl. Phys. Lett. 95 262106
[6] Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B 369 76
[7] Lee J S, Ortolani M, Ginolas A, Chang Y J, Noh T W, Schade U 2007 Physica C 460 549
[8] Zhang K L, Wei X Y, Wang F, Wu C Q, Zhao J S 2011 J. Optoelectronics·Laser 22 656(in Chinese)[张楷亮, 韦晓莹, 王芳, 武长强, 赵金石2011光电子·激光 22 656]
[9] Fang B Y, Li Y, Tong G X, Wang X H, Yan M, Liang Q, Wang F, Qin Y, Ding J, Chen S J, Chen J K, Zheng H Z, Yuan W R 2015 Opt. Mater. 47 225
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[12] Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
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[14] Liang J R, Hu M, Kan Q, Hou S B, Liang X Q, Chen H D 2012 Nanotechnology and Precision Engineering 10 160(in Chinese)[梁继然, 胡明, 阚强, 后顺保, 梁秀琴, 陈弘达2012纳米技术与精密工程 10 160]
[15] Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)[邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武2013 62 217201]
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[17] Xiong Y, Wen Q Y, Tian W, Mao Q, Chen Z, Yang Q H, Jing Y L 2015 Acta Phys. Sin. 64 017202 (in Chinese)[熊瑛, 文岐业, 田伟, 毛淇, 陈智, 杨青慧, 荆玉兰2015 64 017102]
[18] Markov P, Ryckman J D, Marvel R E, Hallman K A, Haglund R F, Weiss S M 2013 CLEO 2013 CTu2F.7
[19] Schuler T, Aegerter M A 1999 Thin Solid Films 351 125
[20] Perkins J D, Cueto J A D, Alleman J L, Warmsinghb C, Keyesa B M, Gedvilasa L M, Parillaa P A, Toa B, Readeyb D W, Ginleya D S 2002 Thin Solid Films 411 152
[21] Yuan W R, Li Y, Wang X H, Zheng H Z, Chen S J, Chen J K, Sun Y, Tang J Y, Liu F, Hao R L, Fang B Y, Xiao H 2014 Acta Phys. Sin. 63 218101 (in Chinese)[袁文瑞, 李毅, 王晓华, 郑鸿柱, 陈少娟, 陈建坤, 孙瑶, 唐佳茵, 刘飞, 郝如龙, 方宝英, 肖寒2014 63 218101]
[22] Xiao H, Li Y, Yuan W R, Fang B Y, Wang X H, Hao R L, Wu Z Y, Xu T T, Jiang W, Chen P Z 2016 Infrared Phys. Technol. 76 580
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[1] Morin F J 1959 Phys. Rev. Lett. 3 34
[2] Lee M H, Kim M G, Song H K 1996 Thin Solid Films 290 30
[3] Maaza M, Hamidi D, Gibaud A, Kana J B K 2011 ICTON 29 1
[4] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C 2005 Appl. Phys. Lett. 87 51910
[5] Chen C H, Fan Z Y 2009 Appl. Phys. Lett. 95 262106
[6] Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B 369 76
[7] Lee J S, Ortolani M, Ginolas A, Chang Y J, Noh T W, Schade U 2007 Physica C 460 549
[8] Zhang K L, Wei X Y, Wang F, Wu C Q, Zhao J S 2011 J. Optoelectronics·Laser 22 656(in Chinese)[张楷亮, 韦晓莹, 王芳, 武长强, 赵金石2011光电子·激光 22 656]
[9] Fang B Y, Li Y, Tong G X, Wang X H, Yan M, Liang Q, Wang F, Qin Y, Ding J, Chen S J, Chen J K, Zheng H Z, Yuan W R 2015 Opt. Mater. 47 225
[10] Seo G, Kim B J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Dev. Lett. 32 1582
[11] Soltani M, Chaker M, Haddad E, Kruzelecky R 2006 Mea. Sci. Technol. 17 1052
[12] Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
[13] Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.:Conden. Matter 12 8837
[14] Liang J R, Hu M, Kan Q, Hou S B, Liang X Q, Chen H D 2012 Nanotechnology and Precision Engineering 10 160(in Chinese)[梁继然, 胡明, 阚强, 后顺保, 梁秀琴, 陈弘达2012纳米技术与精密工程 10 160]
[15] Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)[邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武2013 62 217201]
[16] Lee J S, Ortolani M, Kouba J, Firsov A, Chang Y J, Noh T W, Schade U 2008 Infrared Phys. Technol. 51 443
[17] Xiong Y, Wen Q Y, Tian W, Mao Q, Chen Z, Yang Q H, Jing Y L 2015 Acta Phys. Sin. 64 017202 (in Chinese)[熊瑛, 文岐业, 田伟, 毛淇, 陈智, 杨青慧, 荆玉兰2015 64 017102]
[18] Markov P, Ryckman J D, Marvel R E, Hallman K A, Haglund R F, Weiss S M 2013 CLEO 2013 CTu2F.7
[19] Schuler T, Aegerter M A 1999 Thin Solid Films 351 125
[20] Perkins J D, Cueto J A D, Alleman J L, Warmsinghb C, Keyesa B M, Gedvilasa L M, Parillaa P A, Toa B, Readeyb D W, Ginleya D S 2002 Thin Solid Films 411 152
[21] Yuan W R, Li Y, Wang X H, Zheng H Z, Chen S J, Chen J K, Sun Y, Tang J Y, Liu F, Hao R L, Fang B Y, Xiao H 2014 Acta Phys. Sin. 63 218101 (in Chinese)[袁文瑞, 李毅, 王晓华, 郑鸿柱, 陈少娟, 陈建坤, 孙瑶, 唐佳茵, 刘飞, 郝如龙, 方宝英, 肖寒2014 63 218101]
[22] Xiao H, Li Y, Yuan W R, Fang B Y, Wang X H, Hao R L, Wu Z Y, Xu T T, Jiang W, Chen P Z 2016 Infrared Phys. Technol. 76 580
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