-
针对二氧化钒 (VO2) 薄膜在可调谐太赫兹功能器件中的应用, 利用低温磁控溅射技术, 在太赫兹和光学频段透明的BK7玻璃上制备出高质量的VO2 薄膜. 晶体结构和微观形貌分析显示薄膜为单相VO2单斜金红石结构, 具有明显的 (011) 晶面择优取向, 结构致密, 表面平整. 利用四探针技术和太赫兹时域光谱系统分析了薄膜的绝缘体-金属相变特性, 发现相变过程中薄膜电阻率变化达到4个数量级, 同时对太赫兹透射强度具有强烈的调制作用, 调制深度高达89%. 通过电学相变和太赫兹光学相变特性的对比研究, 证实薄膜的电阻率突变主要与逾渗通路的形成有关, 而太赫兹幅度的调制则来源于薄膜中载流子浓度的变化.该薄膜制备简单, 成膜质量高, 太赫兹调制性能优异, 可应用于太赫兹开关和调制器等集成式太赫兹功能器件.Recently, the applications of vanadium dioxide film (VO2) in terahertz functional devices have attracted much attention because VO2 has a remarkable response to THz wave, In this work BK7 glass a material highly transparent to both THz and optical band is adopted as a substrate. High-quality VO2 film is deposited on a BK7 substrate using low temperature magnetron sputtering technology. The crystallinity and microstructure of the thin film are investigated by X-ray diffraction and atomic force microscopy. The results indicate that the as-deposited film crystallizes directly into single-phase VO2 with (011) preferred orientation and compact nanostructure. Under a heating-cooling cycle, the film undergos a metal-insulator transition with an abrupt resistivity change reaching more than 4 orders of magnitude. Terahertz transmission modulation is characterized by terahertz time domain spectrum, and a giant modulation depth of 89% is obtained. Due to the high transparence and the huge modulation effect, the VO2/BK7 can be widely used for THz devices such as modulators and switches.
-
Keywords:
- vanadium dioxide film /
- terahertz /
- phase transition /
- modulation
[1] Agrawal A, Nahata A 2007 Opt. Express 15 9022
[2] Kleine-Ostmann T, Pierz K, Hein G, Dawson P, Koch M 2007 IEEE Antennas Propag. 49 24
[3] O'Hara J F, Taylor A J, Averitt R D, Zide J M, Gossard A C 2006 Appl. Phys. Lett. 88 251119
[4] Morin F J 1959 Phys. Rev. Lett. 3 34
[5] Zylbersztejn A, Mott N F 1975 Phys. Rev. B 11 4383
[6] Chain E E 1991 Appl. Opt. 30 2782
[7] Lopez R, Boatner L A, Haynes T E, Haglund Jr R F, Feldman L C 2004 Appl. Phys. Lett. 85 1410
[8] Kim H T, Lee Y W, Kim B J, Chae B G, Yun S J, Kang K Y, Han K J, Yee K J, Lim Y S 2006 Phys. Rev. Lett. 97 266401
[9] Cui J Z, Da D A, Jiang W S 1998 Acta Phys. Sin. 47 454 (in Chinese) [崔敬忠, 达道安, 姜万顺 1998 47 454]
[10] Ben-Messaoud T, Landry G, Gariépy J P, Ramamoorthy B, Ashrit P V, Haché A 2008 Opt. Commun. 281 6024
[11] Seo M, Kyoung J, Park H, Koo S, Kim H S, Bernien H, Kim B J, Choe J H, Ahn Y H, Kim H T, Park N, Park Q H, Ahn K, Kim D S 2010 Nano Lett. 10 2064
[12] Kyoung J, Seo M, Park H, Koo S, Kim H S, Park Y, Kim B J, Ahn K, Park N, Kim H T, Kim D S 2010 Opt. Express 18 16452
[13] Wen Q Y, Zhang H W, Yang Q H, Xie Y S, Chen K, Liu Y L 2010 Appl. Phys. Lett. 97 021111
[14] Choi S B, Kyoung J S, Kim H S, Park H R, Park D J, Kim B J, Ahn Y H, Rotermund F, Kim H T, Ahn K J, Kim D S 2011 Appl. Phys. Lett. 98 071105
[15] Wen Q Y, Zhang H W, Yang Q H, Chen Z, Long Y, Jing Y L, Lin Y, Zhang P X 2012 J. Phys. D: Appl. Phys. 45 235106
[16] Driscoll T, Kim H T, Chae B G, Kim B J, Lee Y W, Jokerst N M, Palit S, Smith D R, Ventra M D, Basov D N 2009 Science 325 1518
[17] Goldflam M D, Driscoll T, Chapler B, Khatib O, Marie Jokerst N, Palit S, Smith D R, Kim B J, Seo G, Kim H T, Ventra M D, Basov D N 2011 Appl. Phys. Lett. 99 044103
[18] Luo Z F, Wu Z M, Xu X D, Wang T, Jiang Y D 2010 Chin. Phys. B 19 106103
[19] Nakajima M, Takubo N, Hiroi Z, Ueda Y, Suemoto T 2008 Appl. Phys. Lett. 92 011907
[20] Shi Q W, Huang W X, Zhang Y X, Yan J Z, Zhang Y B, Mao M, Zhang Y, Tu M J 2011 Acs. Appl. Mater. 3 3523
[21] Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, Bernussi A, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 053533
[22] Wang C L, Tian Z, Xing Q R, Gu J Q, Liu F, Hu M L, Chai L, Wang Q Y 2010 Acta Phys. Sin. 59 7857 (in Chinese) [王昌雷, 田震, 邢岐荣, 谷建强, 刘丰, 胡明列, 柴路, 王清月 2010 59 7857]
[23] Li J, Dho J 2011 Appl. Phys. Lett. 99 231909
[24] Gupta A, Aggarwal R, Gupta P, Dutta T, Narayan R J, Narayan J 2009 Appl. Phys. Lett. 95 111915
[25] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C, El Khakani M A 2005 Appl. Phys. Lett. 87 051910
[26] Jiang L J, Carr W N 2004 J. Micromech. Microeng. 14 833
[27] Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902
[28] Qazilbash M M, Brehm M, Chae B G, Ho P C, Andreev G O, Kim B J, Yun S J, Balatsky A V, Maple M B, Keilmann F, Kim H T, Basov D N 2007 Science 318 1750
[29] Jepsen P U, Fischer Bernd M, Thoman A, Helm H, Suh J Y, Lopez R, Haglund R F 2006 Phys. Rev. B 74 205103
-
[1] Agrawal A, Nahata A 2007 Opt. Express 15 9022
[2] Kleine-Ostmann T, Pierz K, Hein G, Dawson P, Koch M 2007 IEEE Antennas Propag. 49 24
[3] O'Hara J F, Taylor A J, Averitt R D, Zide J M, Gossard A C 2006 Appl. Phys. Lett. 88 251119
[4] Morin F J 1959 Phys. Rev. Lett. 3 34
[5] Zylbersztejn A, Mott N F 1975 Phys. Rev. B 11 4383
[6] Chain E E 1991 Appl. Opt. 30 2782
[7] Lopez R, Boatner L A, Haynes T E, Haglund Jr R F, Feldman L C 2004 Appl. Phys. Lett. 85 1410
[8] Kim H T, Lee Y W, Kim B J, Chae B G, Yun S J, Kang K Y, Han K J, Yee K J, Lim Y S 2006 Phys. Rev. Lett. 97 266401
[9] Cui J Z, Da D A, Jiang W S 1998 Acta Phys. Sin. 47 454 (in Chinese) [崔敬忠, 达道安, 姜万顺 1998 47 454]
[10] Ben-Messaoud T, Landry G, Gariépy J P, Ramamoorthy B, Ashrit P V, Haché A 2008 Opt. Commun. 281 6024
[11] Seo M, Kyoung J, Park H, Koo S, Kim H S, Bernien H, Kim B J, Choe J H, Ahn Y H, Kim H T, Park N, Park Q H, Ahn K, Kim D S 2010 Nano Lett. 10 2064
[12] Kyoung J, Seo M, Park H, Koo S, Kim H S, Park Y, Kim B J, Ahn K, Park N, Kim H T, Kim D S 2010 Opt. Express 18 16452
[13] Wen Q Y, Zhang H W, Yang Q H, Xie Y S, Chen K, Liu Y L 2010 Appl. Phys. Lett. 97 021111
[14] Choi S B, Kyoung J S, Kim H S, Park H R, Park D J, Kim B J, Ahn Y H, Rotermund F, Kim H T, Ahn K J, Kim D S 2011 Appl. Phys. Lett. 98 071105
[15] Wen Q Y, Zhang H W, Yang Q H, Chen Z, Long Y, Jing Y L, Lin Y, Zhang P X 2012 J. Phys. D: Appl. Phys. 45 235106
[16] Driscoll T, Kim H T, Chae B G, Kim B J, Lee Y W, Jokerst N M, Palit S, Smith D R, Ventra M D, Basov D N 2009 Science 325 1518
[17] Goldflam M D, Driscoll T, Chapler B, Khatib O, Marie Jokerst N, Palit S, Smith D R, Kim B J, Seo G, Kim H T, Ventra M D, Basov D N 2011 Appl. Phys. Lett. 99 044103
[18] Luo Z F, Wu Z M, Xu X D, Wang T, Jiang Y D 2010 Chin. Phys. B 19 106103
[19] Nakajima M, Takubo N, Hiroi Z, Ueda Y, Suemoto T 2008 Appl. Phys. Lett. 92 011907
[20] Shi Q W, Huang W X, Zhang Y X, Yan J Z, Zhang Y B, Mao M, Zhang Y, Tu M J 2011 Acs. Appl. Mater. 3 3523
[21] Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, Bernussi A, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 053533
[22] Wang C L, Tian Z, Xing Q R, Gu J Q, Liu F, Hu M L, Chai L, Wang Q Y 2010 Acta Phys. Sin. 59 7857 (in Chinese) [王昌雷, 田震, 邢岐荣, 谷建强, 刘丰, 胡明列, 柴路, 王清月 2010 59 7857]
[23] Li J, Dho J 2011 Appl. Phys. Lett. 99 231909
[24] Gupta A, Aggarwal R, Gupta P, Dutta T, Narayan R J, Narayan J 2009 Appl. Phys. Lett. 95 111915
[25] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C, El Khakani M A 2005 Appl. Phys. Lett. 87 051910
[26] Jiang L J, Carr W N 2004 J. Micromech. Microeng. 14 833
[27] Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902
[28] Qazilbash M M, Brehm M, Chae B G, Ho P C, Andreev G O, Kim B J, Yun S J, Balatsky A V, Maple M B, Keilmann F, Kim H T, Basov D N 2007 Science 318 1750
[29] Jepsen P U, Fischer Bernd M, Thoman A, Helm H, Suh J Y, Lopez R, Haglund R F 2006 Phys. Rev. B 74 205103
计量
- 文章访问数: 9065
- PDF下载量: 1283
- 被引次数: 0