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Ti/Pr0.7Ca0.3MnO3/Pt and Ti/Pr0.7Ca0.3MnO3/La0.67Sr0.33MnO3/Pt heterostructures are prepared using a pulsed laser deposition (PLD) technique, and the resistive switching of the heterostructures is investigated. The Ti/Pr0.7Ca0.3MnO3/La0.67Sr0.33MnO3/Pt heterostructure, which has a La0.67Sr0.33MnO3 modulation layer, shows superior characteristics of resistive switching. In particular, the switching ratio and the fatigue properties are improved greatly in this heterostructure. The mechanism of resistive switching in Ti/Pr0.7Ca0.3MnO3/La0.67Sr0.33MnO3/Pt heterostructure is also discussed in this paper.
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Keywords:
- electric pulse induced resistive switching /
- ratio of resistance change /
- fatigue properties
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[28] Chang W Y, Liao J H, Lo Y S, Wu T B 2009 Appl. Phys. Lett. 94 172103
[29] [30] Yang W M, Peng G, Li J J, Yu J 2008 J. Huazhong Univ. Sci. Tech. 36 56 (in Chinese) [杨卫明、彭 刚、李建军、于 军 2008 华中科技大学学报 36 56]
[31] [32] [33] Yang R, Li X M, Yu W D 2009 Appl. Phys. Lett. 95 072103
[34] Hasan M, Dong R, Choi H, Yoon J, Park J B, Seong D J, Hwangb H 2009 J. Electrochem. Soc. 156 239
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[37] -
[1] Nian Y B, Strozier J, Wu N J, Chen X, Ignatiev A 2007 Phys. Rev. Lett. 98 146403
[2] [3] Szot K, Speier W, Bihlmayer G, Waser R 2006 Nat. Mater. 5 312
[4] [5] Shang D S, Wang Q, Chen L D, Dong R, Li X M, Zhang W Q 2006 Phys. Rev. B 73 245427
[6] [7] Shen W, Dittmann R, Breuer U, Waser R 2008 Appl. Phys. Lett. 93 222102
[8] [9] Sun B, Liu Y X, Liu L F, Xu N, Wang Y, Liu X Y, Han R Q, Kang J F 2009 J. Appl. Phys. 105 061630
[10] Chang S H, Lee J S, Chae S C, Lee S B, Liu C, Kahng B, Kim D W, Noh T W 2009 Phys. Rev. Lett. 102 026801
[11] [12] Gang J L, Li S L, Meng Y L, Zhao L, Liang X J, Chen D M 2009 Acta Phys. Sin. 58 5730 (in Chinese)[刚建雷、黎松林、孟洋廖、昭 亮、梁学锦、陈东敏 2009 58 5730]
[13] [14] [15] Shang D S, Chen L D, Wang Q, Yu W D, Li X M, Sun J R, Shen B G 2009 J. Appl. Phys. 105 063511
[16] [17] Chen S S, Yang C P, Deng H, Sun Z G 2008 Acta Phys. Sin. 57 3798 (in Chinese)[陈顺生、杨昌平、邓 恒、孙志刚 2008 57 3798]
[18] Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749
[19] [20] [21] Shono K, Kawano H, Yokot T 2008 Appl. Phys. Express 1 055002
[22] [23] Kawano H, Shono K, Yokota1 T, Gomi M 2008 Appl. Phys. Express 1 101901
[24] Li S L, Liao Z L, Li J, Gang J L, Zheng D N 2009 J. Phys. D 42 045411
[25] [26] [27] Liao Z L, Wang Z Z, Meng Y, Liu Z Y, Gao P, Gang J L, Zhao H W, Liang X J, Bai X D, Chen D M 2009 Appl. Phys. Lett. 94 253503
[28] Chang W Y, Liao J H, Lo Y S, Wu T B 2009 Appl. Phys. Lett. 94 172103
[29] [30] Yang W M, Peng G, Li J J, Yu J 2008 J. Huazhong Univ. Sci. Tech. 36 56 (in Chinese) [杨卫明、彭 刚、李建军、于 军 2008 华中科技大学学报 36 56]
[31] [32] [33] Yang R, Li X M, Yu W D 2009 Appl. Phys. Lett. 95 072103
[34] Hasan M, Dong R, Choi H, Yoon J, Park J B, Seong D J, Hwangb H 2009 J. Electrochem. Soc. 156 239
[35] [36] Hasan M, Dong R, Choi H J, Lee D S, Seong D J, Pyun M B, Hwangb H 2008 Appl. Phys. Lett. 92 202102
[37]
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