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Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films

Yang Tian-Yong Kong Chun-Yang Ruan Hai-Bo Qin Guo-Ping Li Wan-Jun Liang Wei-Wei Meng Xiang-Dan Zhao Yong-Hong Fang Liang Cui Yu-Ting

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Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films

Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting
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  • The p-type N doped ZnO thin films are fabricated using radio-frequency magnetron sputtering technique in O-rich growth condition together with the direct N+ ion-implantation and annealing. The conductivities and Raman scattering properties of the samples are studied by Hall measurements and Raman spectra respectively. Hall measurements indicate that the optimal p-type ZnO film can be obtained when the sample is annealed at 600 ℃ for 120 min in N2 ambience, and its hole concentration is about 2.527×1017 cm-3. N+-implantation induces three additional vibrational modes in ZnO, which are located at 274.2, 506.7 and 640.4 cm-1 respectively. In the process of the annealing, by comparing the electrical properties and Raman speetra of the samples, we find that the competition between intrinsic donor defects and the activation of N acceptors plays a crucial role in the p-type formation of ZnO:N films during annealing.
    • Funds: Project supported by the Natural Science Foundation of Chongqing, China (Grant No. CSTC.2011BA4031) and the National Science Foundation of China (Grant No. 1075314).
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    Lu J G, Liang Q N, Zhang Y Z, Ye Z Z, Fujita S Z 2007 J. Phys. D: Appl. Phys. 40 3179

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    Li X H, Xu H Y, Zhang X T, Liu Y C, Sun J W, Lu Y M 2009 Appl. Phys. Lett. 95 191903

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    Esmaili-Sardari S, Berkovich A, Alliadis A 2012 Appl. Phys. Lett. 100 053503

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    Du G T, Ma Y, Zhang Y T, Yang T P 2005 Appl. Phys. Lett. 87 213103

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    Kumar A, Kumar M, Singh B P 2010 Opt. Commun. 283 3996

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    Zang H, Wang Z G, Pang L L, Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B 2010 Acta Phys. Sin. 59 4832 (in Chinese) [臧航, 王志光, 庞立龙, 魏孔芳, 姚存峰, 申铁龙, 孙建荣, 马艺准, 缑洁, 盛彦斌, 朱亚滨 2010 59 4832]

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    Samanta K, Bhattacharya P, Katiyar R S, Lwamoto W, Pagliuso P G, Rettori C 2006 Phys. Rev. B 73 245213

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    Zeferino R S, Flores M B, Pal U 2011 J. Appl. Phys. 109 014308

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    Bundesmann C, Ashkenov N, Shubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974

    [19]

    Friedrich F, Gluba M A, Nickel N H 2009 Appl. Phys. Lett. 95 141903

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    Wang J B, Zhong H M, Li Z F, Liu W 2006 Appl. Phys. Lett. 88 101913

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    Wang X Q, Yang S R, Wang J Z, Li M T, Jiang X Y, Du G T, Liu Y, Chang R P H 2001 J. Cryst. Growth 226 27

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    Liu W W, Yao B, Zhang Z Z, Li Y F, Li B H, Shan C X, Zhang J Y, Shen D Z, Fan X W 2011 J. Appl. Phys. 109 093518

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    Chen X Y, Zhang Z Z, Yao B, Jiang M M, Wang S P, Li B H, Shan C X, Liu L, Zhao D X, Zhao H F, Shen D Z 2011 J. Appl. Phys. 110 053305

  • [1]

    Look D C 2001 Mater. Sci. Eng. B 80 383

    [2]

    Park C H, Zhang S B, Wei S H 2002 Phys. Rev. B 66 073202

    [3]

    Barnes T M, Olson K, Wolden C A 2005 Appl. Phys. Lett. 86 112112

    [4]

    Lee E C, Kim Y S, Jin Y G, Chang K J 2001 Phys. Rev. B 64 058120

    [5]

    Wang N, Kong C Y, Zhu R J, Qin G P, Dai T L, Nan M, Ruan H B 2007 Acta Phys. Sin. 56 5974 (in Chinese) [王楠, 孔春阳, 朱仁江, 秦国平, 戴特力, 南貌, 阮海波 2007 56 5974]

    [6]

    Ohta Y, Haga T, Abe Y 1997 Jpn. J. Appl. Phys. 36 L1040

    [7]

    Lu J G, Liang Q N, Zhang Y Z, Ye Z Z, Fujita S Z 2007 J. Phys. D: Appl. Phys. 40 3179

    [8]

    Li X H, Xu H Y, Zhang X T, Liu Y C, Sun J W, Lu Y M 2009 Appl. Phys. Lett. 95 191903

    [9]

    Esmaili-Sardari S, Berkovich A, Alliadis A 2012 Appl. Phys. Lett. 100 053503

    [10]

    Du G T, Ma Y, Zhang Y T, Yang T P 2005 Appl. Phys. Lett. 87 213103

    [11]

    Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205

    [12]

    Kumar A, Kumar M, Singh B P 2010 Opt. Commun. 283 3996

    [13]

    Zang H, Wang Z G, Pang L L, Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B 2010 Acta Phys. Sin. 59 4832 (in Chinese) [臧航, 王志光, 庞立龙, 魏孔芳, 姚存峰, 申铁龙, 孙建荣, 马艺准, 缑洁, 盛彦斌, 朱亚滨 2010 59 4832]

    [14]

    Samanta K, Bhattacharya P, Katiyar R S, Lwamoto W, Pagliuso P G, Rettori C 2006 Phys. Rev. B 73 245213

    [15]

    Asmar A R, Atanas J P, Ajaka M, Zaatar Y, Ferblantier G, Sauvajol J L, Jabbour J, Juillaget S, Foucaran A 2005 J. Cryst. Growth 279 399

    [16]

    Zeferino R S, Flores M B, Pal U 2011 J. Appl. Phys. 109 014308

    [17]

    Kaschner A, Haboeck U, Martin S, Matthias S, Kaczmarczyk G, Hoffmann A, Thomsen C, Zeuner Z, Alves H R, Hofmann D M, Meyer B K 2002 Appl. Phys. Lett. 80 1909

    [18]

    Bundesmann C, Ashkenov N, Shubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974

    [19]

    Friedrich F, Gluba M A, Nickel N H 2009 Appl. Phys. Lett. 95 141903

    [20]

    Wang J B, Zhong H M, Li Z F, Liu W 2006 Appl. Phys. Lett. 88 101913

    [21]

    Wang X Q, Yang S R, Wang J Z, Li M T, Jiang X Y, Du G T, Liu Y, Chang R P H 2001 J. Cryst. Growth 226 27

    [22]

    Liu W W, Yao B, Zhang Z Z, Li Y F, Li B H, Shan C X, Zhang J Y, Shen D Z, Fan X W 2011 J. Appl. Phys. 109 093518

    [23]

    Chen X Y, Zhang Z Z, Yao B, Jiang M M, Wang S P, Li B H, Shan C X, Liu L, Zhao D X, Zhao H F, Shen D Z 2011 J. Appl. Phys. 110 053305

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Publishing process
  • Received Date:  27 July 2012
  • Accepted Date:  07 September 2012
  • Published Online:  05 February 2013

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