金属Pt薄膜上二氧化钒的制备及其电致相变性能研究

邱东鸿; 文岐业; 杨青慧; 陈智; 荆玉兰; 张怀武

doi:10.7498/aps.62.217201

摘要

通过引入SiO2氧化物缓冲层, 在金属Pt电极上利用射频磁控溅射技术成功制备出高质量的VO2薄膜. 详细研究了SiO2厚度对VO2薄膜的晶体结构、微观形貌和绝缘体–金属相变(MIT)性能的影响. 结果表明厚度0.2 μm以上的SiO2缓冲层能够有效消除VO2薄膜与金属薄膜之间的巨大应力, 制备出具有明显相变特性的VO2薄膜. 当缓冲层达到0.7 μm以上, 获得的薄膜具有明显的(011)晶面择优取向, 表面平整致密, 相变前后电阻率变化达到3个数量级以上. 基于该技术制备了Pt-SiO2/VO2-Au三明治结构, 通过在垂直膜面方向施加很小的驱动电压, 观察到明显的阶梯电流跳跃, 证实实现了电致绝缘体–金属相变过程. 该薄膜制备工艺简单, 性能稳定, 器件结构灵活可应用于集成式电控功能器件.

关键词:

Abstract

High-quality VO2 thin films are deposited on the metal platinum (Pt) electrode buffered by silicon dioxide (SiO2) using radio frequency magnetron sputtering. The effect of the thickness of SiO2 on the the crystal structure, morphology and metal-insulator transition (MIT) performance of the films are discussed. Results show that SiO2 buffer layer with a thickness of 0.2 μm can effectively eliminate huge stress between the VO2 film and the metal film; and the VO2 thin film with the distinct MIT are deposited. When the buffer layer reaches more than 0.7 μm, the VO2 film has a distinct (011) preferred orientation, the smooth surface and compact nanostructure, and the resistance change reaches more than three orders of magnitude. At the same time, Pt-SiO2/VO2-Au sandwiched structure is achieved to test the current versus voltage curves, in which can be seen several distinct steps of current caused by the voltage perpendicular to the plane of a VO2 film. The result confirms the electrically-driven metal-insulator transition. Due to the high-quality VO2 and the flexible device structure, the VO2/Pt-SiO2 can be widely used for large-scale integrated electronic control devices.

Keywords:

vanadium dioxide film /
phase transition /
electrically-driven metal-insulator transition /
threshold voltage

作者及机构信息

1.
电子科技大学, 电子薄膜与集成器件国家重点实验室, 成都 610054;

2.
电子科技大学, 战术抗干扰技术国家重点实验室, 成都 610054

基金项目: 国家自然科学基金重点项目 (批准号: 61131005)、教育部科学技术研究重大项目 (批准号: 313013)、国家高技术研究发展技术(863计划) (批准号: 2011AA010204)、教育部新世纪优秀人才资助计划 (批准号: NCET-11-0068)、四川省杰出青年学术技术带头人计划 (批准号: 2011JQ0001)、高校博士点专项科研基金 (批准号: 20110185130002)、中央高校基本科研业务费(批准号: ZYGX2010J034) 和中国工程物理研究院太赫兹科学技术基金(批准号: CAEPTHZ201207)资助的课题.

Authors and contacts

1.
State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

2.
National Key Laboratory of Science and Technology on Communication, University of Electronic, Science and Technology of China, Chengdu 610054, China

Funds: Project supported by the National Nature Science Foundation of China (Grant No. 61131005), Key Project of Chinese Ministry of Education (Grant No. 313013), the National High Technology Research and Development Program 863 (Grant No. 2011AA010204), the "New Century Excellent Talent Foundation" of China (Grant No. NCET-11-0068), the Sichuan Youth S & T foundation, China (Grant No. 2011JQ0001), the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20110185130002), the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J034), and the CAEP THz Science and Technology Foundation (Grant No. CAEPTHZ201207).

参考文献

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[17]	Zhou Y, Chen X, Ko C, Yang Z, Ramanathan S 2013 IEEE Electron Device Lett. 34 220
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[20]	Ji Y D, Pan T S, Bi Z, Liang W Z, Zhang Y, Zeng H Z, Wen Q Y, Zhang H W, Jia Q X, Lin Y 2012 Appl. Phys. Lett. 101 071902
[21]	Narayan J, Bhosle V M 2006 J. Appl. Phys. 100 103524
[22]	Kim H T, Chae B G, Youn D H, Maeng S L, Kim G, Kang K Y, Lim Y S 2004 New J. Phys. 6 52
[23]	Leroy J, Crunteanu A, Bessaudou A, Cosset F, Champeaux C, Orlianges J C 2012 Appl. Phys. Lett. 100 213507
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[25]	Ruzmetov D, Gopalakrishnan G, Deng J, Narayanamurti V, Ramanathan S 2009 J. Appl. Phys. 106 083702
[26]	Ko C, Ramanathan S 2008 Appl. Phys. Lett. 93 252101

施引文献

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34
[2]	Lopez R, Boatner L A, Haynes T E, Haglund Jr R F, Feldman L C 2004 Appl. Phys. Lett. 85 1410
[3]	Kim H T, Lee Y W, Kim B J, Chae B G, Yun S J, Kang K Y, Han K J, Yee K J, Lim Y S 2006 Phys. Rev. Lett. 97 266401
[4]	Wen Q Y, Zhang H W, Yang Q H, Xie Y X, Chen K, Liu Y L 2010 Appl. Phys. Lett. 97 021111
[5]	Wang X J, Liu Y Y, Li D H, Feng B H, He Z W, Qi Z 2013 Chin. Phys. B 22 066803
[6]	Sun D D, Chen Z, Wen Q Y, Qiu D H, Lai W E, Dong K, Zhao B H, Zhang H W 2013 Acta Phys. Sin. 62 017202 (in Chinese) [孙丹丹, 陈智, 文岐业, 邱东鸿, 赖伟恩, 董凯, 赵碧辉, 张怀武 2013 62 017202]
[7]	Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.: Condens. Matter 12 8837
[8]	Seo G, Kim B -J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Device Lett. 32 1582
[9]	Ha S D, Zhou Y, Fisher C J, Ramanathan S, Treadway J P 2013 J. Appl. Phys. 113 184501
[10]	Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
[11]	Lee Y W, Kim B J, Lim J W, Yun S J, Choi S, Chae B G, Kim G, Kim H T 2008 Appl. Phys. Lett. 92 162903
[12]	Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, Bernussi A, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 053533
[13]	Wang C L, Tian Z, Xing Q R, Gu J Q, Liu F, Hu M L, Chai L, Wang Q Y 2010 Acta Phys. Sin. 59 7857 (in Chinese) [王昌雷, 田震, 邢岐荣, 谷建强, 刘丰, 胡明列, 柴路, 王清月 2010 59 7857]
[14]	Li J, Dho J 2011 Appl. Phys. Lett. 99 231909
[15]	Luo Z F, Wu Z M, Xu X D, Wang T, Jiang Y D 2010 Chin. Phys. B 19 106103
[16]	Lee M J, Park Y, Suh D S, Lee E H, Seo S, Kim D C, Jung R, Kang B S, Ahn S E, Lee C B, Seo D H, Cha Y K, Yoo I K, Kim J S, Park B H 2007 Adv. Mater. 19 3919
[17]	Zhou Y, Chen X, Ko C, Yang Z, Ramanathan S 2013 IEEE Electron Device Lett. 34 220
[18]	Okimura K, Suruz Mian Md 2012 J. Vac. Sci. Technol. A 30 051502
[19]	Grbovic D, Lavrik N V, Rajic S, Datskos P G 2008 J. Appl. Phys. 104 054508
[20]	Ji Y D, Pan T S, Bi Z, Liang W Z, Zhang Y, Zeng H Z, Wen Q Y, Zhang H W, Jia Q X, Lin Y 2012 Appl. Phys. Lett. 101 071902
[21]	Narayan J, Bhosle V M 2006 J. Appl. Phys. 100 103524
[22]	Kim H T, Chae B G, Youn D H, Maeng S L, Kim G, Kang K Y, Lim Y S 2004 New J. Phys. 6 52
[23]	Leroy J, Crunteanu A, Bessaudou A, Cosset F, Champeaux C, Orlianges J C 2012 Appl. Phys. Lett. 100 213507
[24]	Crunteanu A, Givernaud J, Leroy J, Mardivirin D, Champeaux C, Orlianges J C, Catherinot A, Blondy P 2010 Sci. Technol. Adv. Mater. 11 065002
[25]	Ruzmetov D, Gopalakrishnan G, Deng J, Narayanamurti V, Ramanathan S 2009 J. Appl. Phys. 106 083702
[26]	Ko C, Ramanathan S 2008 Appl. Phys. Lett. 93 252101

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