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We have investigated the motion of dislocations originating from Vicker indentations in single-crystalline silicon wafers subjected to high temperature rapid thermal processing (RTP) under different ambients. It is found that the dislocations move very rapidly due to the release of residual stress around the indentations during the RTP. Moreover, as the RTP temperature exceeds 1100 °C, the dislocation gliding distances in the specimens subjected to the RTP in N2 atmosphere are much shorter than in Ar ambient. We believe that the nitrogen atoms injected into the indentation by the RTP under N2 ambient exhibit a pinning effect on dislocation motion. It is thus shown that the high temperature RTP in N2 ambient can improve the mechanical strength of silicon wafer.
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Keywords:
- rapid thermal processing /
- dislocation motion /
- mechanical properties /
- silicon wafer
[1] Hart M J, Evans A G R 1988 Semicond. Sci. Technol. 3 421
[2] Li B C, Gao W D, Han Y L, Liu X M 2010 Acta Phys. Sin. 59 1632 (in Chinese) [李斌成, 高卫东, 韩艳玲, 刘显明 2010 59 1632]
[3] Timans P J 1998 Mater. Sci. Semicond. Process. 1 169
[4] Hu S M 1969 J. Appl. Phys. 40 4413
[5] Pagani M, Falster R J 1997 Appl. Phys. Lett. 70 1572
[6] Sumino K, Yonenaga I 1983 J. Appl. Phys. 54 5016
[7] Li D S, Yang D R, Que D L 1999 Physica B 274 553
[8] Zeng Z D, Ma X Y, Yang D R 2010 J. Cryst. Growth 312 169
[9] Yonenaga I 2005 J. Appl. Phys. 98 023517
[10] Zeng Z D, Zeng Y H, Ma X Y, Yang D R 2011 J. Cryst. Growth 324 93
[11] Wang B 2011 M. S. Dissertation (Hangzhou: Zhejiang University) (in Chinese) [王彪 2011 硕士学位论文 (杭州: 浙江大学)]
[12] Giannattasio A, Senkader S, Falster R J 2003 Physica B 340-342 996
[13] Alpass C R, Murphy J D, Falster R J 2009 J. Appl. Phys. 105 013519
[14] Sumino K, Yonenaga I 1993 Phys. Status. Solidi. A 138 573
[15] Hu S M 1975 J. Appl. Phys. 46 1470
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[1] Hart M J, Evans A G R 1988 Semicond. Sci. Technol. 3 421
[2] Li B C, Gao W D, Han Y L, Liu X M 2010 Acta Phys. Sin. 59 1632 (in Chinese) [李斌成, 高卫东, 韩艳玲, 刘显明 2010 59 1632]
[3] Timans P J 1998 Mater. Sci. Semicond. Process. 1 169
[4] Hu S M 1969 J. Appl. Phys. 40 4413
[5] Pagani M, Falster R J 1997 Appl. Phys. Lett. 70 1572
[6] Sumino K, Yonenaga I 1983 J. Appl. Phys. 54 5016
[7] Li D S, Yang D R, Que D L 1999 Physica B 274 553
[8] Zeng Z D, Ma X Y, Yang D R 2010 J. Cryst. Growth 312 169
[9] Yonenaga I 2005 J. Appl. Phys. 98 023517
[10] Zeng Z D, Zeng Y H, Ma X Y, Yang D R 2011 J. Cryst. Growth 324 93
[11] Wang B 2011 M. S. Dissertation (Hangzhou: Zhejiang University) (in Chinese) [王彪 2011 硕士学位论文 (杭州: 浙江大学)]
[12] Giannattasio A, Senkader S, Falster R J 2003 Physica B 340-342 996
[13] Alpass C R, Murphy J D, Falster R J 2009 J. Appl. Phys. 105 013519
[14] Sumino K, Yonenaga I 1993 Phys. Status. Solidi. A 138 573
[15] Hu S M 1975 J. Appl. Phys. 46 1470
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